philips RC5 protocol
Abstract: sony sirc ir_tx_RC5.asm ISO 9001 Sony PIC ir transmit rc5 remote philips RC5 nec 2401 rc5 protocol ir_tx_Sony.asm SIRC
Text: AN1064 IR Remote Control Transmitter Author: receiver. The IR light then travels through the air and is detected at the receiver by a photo-diode. The photodiode is often contained in a complete module which demodulates the modulated signal for a given carrier
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AN1064
PIC10F206
PIC10F2XX
o536-4803
DS01064A-page
philips RC5 protocol
sony sirc
ir_tx_RC5.asm
ISO 9001 Sony
PIC ir transmit rc5 remote
philips RC5
nec 2401
rc5 protocol
ir_tx_Sony.asm
SIRC
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CC3000
Abstract: AN1064 M6800 000D M68HC11 ED0A e60a motorola application note
Text: Order this document by AN1064/D Motorola Semiconductor Application Note AN1064 Use of Stack Simplifies M68HC11 Programming By Gordon Doughman Introduction The architectural extensions of the M6800 incorporated into the M68HC11 allow easy manipulation of data residing on the stack of the
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AN1064/D
AN1064
M68HC11
M6800
CC3000
AN1064
000D
ED0A
e60a
motorola application note
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A2388
Abstract: C1005y5v1c104zt USB A PCB MALE AN1064 ISL6292 ISL6292EVAL2 WM-64 5002k-nd
Text: ISL6292EVAL2 Evaluation Board Application Manual PRELIMINARY July 2003 AN1064 Description Features The ISL6292EVAL2 is a complete platform for the evaluation on all datasheet specifications and functionalities. The on board 9-bit DIP switch facilitates programming charging
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ISL6292EVAL2
AN1064
ISL6292
A2388
C1005y5v1c104zt
USB A PCB MALE
AN1064
WM-64
5002k-nd
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CC3000
Abstract: diode ED01 a608 AN1064/D M6800 M68HC11 000D AN1064
Text: Freescale Semiconductor Order this document by AN1064/D Freescale Semiconductor, Inc. AN1064 Use of Stack Simplifies M68HC11 Programming By Gordon Doughman Introduction The architectural extensions of the M6800 incorporated into the M68HC11 allow easy manipulation of data residing on the stack of the
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AN1064/D
AN1064
M68HC11
M6800
CC3000
diode ED01
a608
AN1064/D
000D
AN1064
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AN1064/D
Abstract: CC3000 AN1064 000D M6800 M68HC11 ED0A m114
Text: Freescale Semiconductor, Inc. Order this document by AN1064/D Motorola Semiconductor Application Note Freescale Semiconductor, Inc. AN1064 Use of Stack Simplifies M68HC11 Programming By Gordon Doughman Introduction The architectural extensions of the M6800 incorporated into the
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AN1064/D
AN1064
M68HC11
M6800
AN1064/D
CC3000
AN1064
000D
ED0A
m114
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assembly language buzzer
Abstract: AN1078 AN972 AN1039 AN1044 AN1045 AN1047 an1064 AN982 datasheet ST7
Text: Application Notes Index Application Note Function Number ANST7ABS 2 ST72xx Application Notes, Abstracts by Topics AN1078 1) AN1070 1) AN1064 AN1048 ST7 Timer PWM Duty Cycle Switch for True 0% or 100% Duty Cycle ST7 Checksum Selfchecking Capability Writing Optimized Hiware C Language for ST7
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ST72xx
AN1078
AN1070
AN1064
AN1048
AN1047
AN1045
AN1044
AN1042
AN1041
assembly language buzzer
AN1078
AN972
AN1039
AN1044
AN1045
AN1047
an1064
AN982
datasheet ST7
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CY14B101LA-SZ45XI
Abstract: CY14B101LA-SZ25XI
Text: CY14B101LA CY14B101NA 1 Mbit 128K x 8/64K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 128K x 8 (CY14B101LA) or 64K x 16 (CY14B101NA) ■ Hands off Automatic STORE on Power Down with only a Small
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CY14B101LA
CY14B101NA
8/64K
CY14B101LA/CY14B101NA
CY14B101LA-SZ45XI
CY14B101LA-SZ25XI
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Untitled
Abstract: No abstract text available
Text: CY7C1049CV33 Automotive 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Temperature ranges ❐ Automotive -A: –40 °C to 85 °C ❐ Automotive-E: –40 °C to 125 °C The CY7C1049CV33 Automotive is a high performance CMOS
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CY7C1049CV33
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Untitled
Abstract: No abstract text available
Text: CY7C1347G 4-Mbit 128 K x 36 Pipelined Sync SRAM 4-Mbit (128 K × 36) Pipelined Sync SRAM Features Functional Description • Fully registered inputs and outputs for pipelined operation ■ 128 K × 36 common I/O architecture ■ 3.3 V core power supply (VDD)
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CY7C1347G
CY7C1347G
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5-PIN MARKING PAX
Abstract: ISO7816-3 marking wt6 transistor WT4 U435 MOROCCO WT21 001C BAT42 HE10 ISO7816
Text: ST7SCR 8-BIT LOW-POWER, FULL-SPEED USB MCU WITH 16K FLASH, 768 RAM, SMARTCARD I/F, TIMER • ■ ■ ■ ■ Memories – Up to 16K of ROM or High Density Flash HDFlash program memory with read/write protection, HDFlash In-Circuit and In-Application Programming. 100 write/erase cycles guaranteed, data retention: 20 years at 55°C
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256-byte
5-PIN MARKING PAX
ISO7816-3
marking wt6
transistor WT4
U435 MOROCCO
WT21
001C
BAT42
HE10
ISO7816
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ST72262G2
Abstract: universal AC Motor soft start ST72260G ST72260G1 ST72262G ST72262G1 ST72264G ST72264G1 SDIP32 DIODE 044 1334 smd
Text: ST72260G, ST72262G, ST72264G 8-BIT MCU WITH FLASH OR ROM MEMORY, ADC, TWO 16-BIT TIMERS, I2C, SPI, SCI INTERFACES PRODUCT PREVIEW • ■ ■ ■ ■ Memories – 4 K or 8 Kbytes Program memory: ROM or Single voltage extended Flash XFlash with read-out protection write protection and InCircuit Programming and In-Application Programming (ICP and IAP)
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ST72260G,
ST72262G,
ST72264G
16-BIT
ST72262G2
universal AC Motor soft start
ST72260G
ST72260G1
ST72262G
ST72262G1
ST72264G
ST72264G1
SDIP32
DIODE 044 1334 smd
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ST72262G2
Abstract: smd transistor marking sp1 TRANSISTOR SMD MARKING CODE 2301 SDIP32 ST72260G ST72260G1 ST72262G ST72262G1 FR MARKING SMD TRANSISTOR ST72264G1
Text: ST72260G, ST72262G, ST72264G 8-BIT MCU WITH FLASH OR ROM MEMORY, ADC, TWO 16-BIT TIMERS, I2C, SPI, SCI INTERFACES • ■ ■ ■ ■ Memories – 4 K or 8 Kbytes Program memory: ROM or Single voltage extended Flash XFlash with read-out protection write protection and InCircuit Programming and In-Application Programming (ICP and IAP). 10K write/erase cycles guaranteed, data retention: 20 years at
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ST72260G,
ST72262G,
ST72264G
16-BIT
ST72262G2
smd transistor marking sp1
TRANSISTOR SMD MARKING CODE 2301
SDIP32
ST72260G
ST72260G1
ST72262G
ST72262G1
FR MARKING SMD TRANSISTOR
ST72264G1
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AN1064
Abstract: CY62167E 1M x 16 SRAM
Text: CY62167E MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • • • • (CE1 HIGH, or CE2 LOW, or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • The device is deselected (CE1 HIGH or CE2 LOW)
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CY62167E
16-Mbit
AN1064
1M x 16 SRAM
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jrc 2901
Abstract: 2901 jrc real time clok ST7 ICC Family U435 MOROCCO 0X00 DIP20 HE10 SO20 ST7LITE20
Text: ST7LITE2 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, TIMERS, SPI Memories – 8 Kbytes single voltage Flash Program memory with read-out protection, In-Circuit Programming and In-Application programming ICP and IAP . 10K write/erase cycles guaranteed, data retention: 20 years at 55°C.
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Untitled
Abstract: No abstract text available
Text: CY7C1059DV33 8-Mbit 1M x 8 Static RAM Features Functional Description • High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 110 mA at f = 100 MHz ■ Low CMOS standby power ❐ ISB2 = 20 mA The CY7C1059DV33 is a high performance CMOS Static RAM
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CY7C1059DV33
CY7C1059DV33
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CY62187EV30
Abstract: No abstract text available
Text: CY62187EV30 MoBL 64-Mbit 4 M x 16 Static RAM 64-Mbit (4 M × 16) Static RAM Features Functional Description • Very high speed ❐ 55 ns ■ Wide voltage range ❐ 2.2 V to 3.7 V ■ Ultra low standby power ❐ Typical standby current: 8 A ❐ Maximum standby current: 48 μA
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CY62187EV30
64-Mbit
16-bits.
I/O15)
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SDIP32
Abstract: SDIP42 ST72324 ST72F324 TQFP32 TQFP44 AN1446 72f324b st72f324xxxx
Text: ST72324 5V RANGE 8-BIT MCU WITH 8 TO 32K FLASH, 10-BIT ADC, 4 TIMERS, SPI, SCI INTERFACE • ■ ■ ■ ■ Memories – 8 to 32K dual voltage High Density Flash HDFlash with read-out protection capability. InApplication Programming and In-Circuit Programming for HDFlash devices
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ST72324
10-BIT
SDIP32
SDIP42
ST72324
ST72F324
TQFP32
TQFP44
AN1446
72f324b
st72f324xxxx
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Untitled
Abstract: No abstract text available
Text: CY14B104K, CY14B104M 4-Mbit 512 K x 8/256 K × 16 nvSRAM with Real Time Clock 4-Mbit (512 K × 8/256 K × 16) nvSRAM with Real Time Clock Features • 25 ns and 45 ns access times ■ Internally organized as 512 K × 8 (CY14B104K) or 256 K × 16 (CY14B104M)
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CY14B104K,
CY14B104M
44-pin
54-pin
CY14B104K)
CY14B104M)
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Untitled
Abstract: No abstract text available
Text: CY14B108L CY14B108N 8-Mbit 1024 K x 8/512 K × 16 nvSRAM 8-Mbit (1024 K × 8/512 K × 16) nvSRAM Features • Packages ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-ball fine-pitch ball grid array (FBGA) Pb-free and restriction of hazardous substances (RoHS)
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CY14B108L
CY14B108N
CY14B108L)
CY14B108N)
44-/54-pin
48-ball
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pure sinus inverter circuit diagram
Abstract: 3 phase motor soft starter circuit diagram ST7FLI19BF1U6 ATIC 64 soft starter for single phase induction motor JRC 5002 16 PIN PIR SENSOR IC PINOUT 702 TRANSISTOR smd 702 Z TRANSISTOR smd c02 sensor
Text: ST7LITE1xB 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, 5 TIMERS, SPI Memories – up to 4 Kbytes single voltage extended Flash XFlash Program memory with read-out protection, In-Circuit Programming and In-Application programming (ICP and IAP). 10K write/
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72f324
Abstract: types of scr packages TRANSISTOR SMD MARKING CODE w2 SDIP32 SDIP42 ST72324 ST72324J ST72324K TQFP32 TQFP44
Text: ST72324 8-BIT MCU WITH NESTED INTERRUPTS, FLASH, 10-BIT ADC, 4 TIMERS, SPI, SCI INTERFACE • ■ ■ ■ ■ Memories – 8 to 32K dual voltage High Density Flash HDFlash or ROM with read-out protection capability. In-Application Programming and InCircuit Programming for HDFlash devices
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ST72324
10-BIT
72f324
types of scr packages
TRANSISTOR SMD MARKING CODE w2
SDIP32
SDIP42
ST72324
ST72324J
ST72324K
TQFP32
TQFP44
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amp op 072 DE jrc
Abstract: OF IC 741 using opamp 9845 morocco component selection criteria for opamp 741 used in voltage to voltage converter Schaffner 781 500Khz ceramic smd resonator G21 SMD HE10 SDIP32 ST72C171
Text: ST72C171 8-BIT MCU with 8K FLASH, ADC, WDG, SPI, SCI, TIMERS SPGAs Software Programmable Gain Amplifiers , OP-AMP PRODUCT PREVIEW • ■ ■ ■ ■ Memories – 8K of single voltage Flash Program memory with read-out protection – In-Situ Programming (Remote ISP)
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ST72C171
amp op 072 DE jrc
OF IC 741 using opamp
9845 morocco
component selection criteria for opamp 741 used in voltage to voltage converter
Schaffner 781
500Khz ceramic smd resonator
G21 SMD
HE10
SDIP32
ST72C171
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CY62157EV30LL-45BVXI
Abstract: TSOP 48 thermal resistance
Text: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges
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CY62157EV30
I/O15)
CY62157EV30LL-45BVXI
TSOP 48 thermal resistance
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Untitled
Abstract: No abstract text available
Text: Order this document by AN1064/D MOTOROLA SEMICONDUCTOR • m h m h m h h h h m h m APPLICATION NOTE AN 1064 Use of S tack Sim plifies M 68H C 11 Program m ing By Gordon Doughman INTRODUCTION The architectural extensions of the M6800 incorporated into the M68HC11 allow easy manipulation
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OCR Scan
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AN1064/D
M6800
M68HC11
1ATX30074-2
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