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    5MIO

    Abstract: 200mj AN4177 MC10XS3535 10XS3535 AECQ100 Monopulse 110mJ
    Text: Freescale Semiconductor Application Note AN4177 Rev. 1.0, 7/2010 Repetitive Clamped Inductive Energy Capability for the MC10XS3535 By: Laurent Guillot 1 Introduction This document describes the functioning of the 10XS3535 smart power switch when switching inductive loads with no


    Original     		AN4177 MC10XS3535) 10XS3535 10XS3535 16-bit 5MIO 200mj AN4177 MC10XS3535 AECQ100 Monopulse 110mJ PDF

    klystron S-band

    Abstract: klystron Klystron, ITT AT25 SP13 RG-48U EN3606 ITT klystron
    Text: SP13 '90 11:52 ITT ELEC TEC Q~t~Ai-A .2/ 8568 Klystron Application Note ANi4177 Appicati'on Considerations for the 8568 S-Band Hig~h Power Klystron This N~ote, for use in c• onjunction with the Technical This device, in operation, may produce X-Radia. Data Sheet, describes the installation and operating


    Original     		ANi4177 ITT-AJ2106 108rT-A1XZ J2123 l17-A42121 ITT-AJ2110 LTT-AJ2122 JrT-aJ2115 ITMi7lflAJ2114 klystron S-band klystron Klystron, ITT AT25 SP13 RG-48U EN3606 ITT klystron PDF