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    ANPEC ELECTRONICS Search Results

    ANPEC ELECTRONICS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    ANPEC ELECTRONICS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ANPEC

    Abstract: china mobile lcd 5-146281-4 vga card CY04 MOSFET NOTEBOOK Analog IC Design PMIC HDD china ic A507
    Text: www.anpec.com.tw 茂達電子 - ANPEC Anpec Always Around Prepared By Tim Shiue TEL : 886-3-564-2000 Ext 250 Date : Aug. 12th, 2005 1 大綱 www.anpec.com.tw • • • • • 公司簡述 產品概況 產品應用 產品策略 業務窗口 2 About Anpec


    Original     		PDF 00V-IGBT, 60/100V-MOSFET A411-1 ANPEC china mobile lcd 5-146281-4 vga card CY04 MOSFET NOTEBOOK Analog IC Design PMIC HDD china ic A507

    APA2308

    Abstract: ANPEC 27BSC MS-001
    Text: anpec APA2308 Class AB Stereo Headphone Driver Features ! ! ! ! ! ! ! ! ! ! ! Applications Operating Voltage Single Supply 3V to 7V Dual Supply ±1.5V to ± 3.5V High Signal-to-Noise Ratio 100dB High Slew Rate 5V/ µs Low Distortion -65dB Large Output Voltage Swing


    Original     		PDF APA2308 100dB -65dB APA2308 280mW 110mW with-1005 JESD-22-B, MIL-STD-883D-1011 ANPEC 27BSC MS-001

    APL5883

    Abstract: SOT89 voltage regulator marking code 93
    Text: anpec APL5883 300mA Low Dropout Linear Regulator of Fixed 2.85V,3.3V and 3.5V Features ! ! ! ! ! ! ! ! General Description Low Dropout Voltage of 1.2V at 300mA Output Voltage Accuracy ± 2.0% Line Regulation - 1mV typ. Load Regulation - 6mV (typ.) Input Voltage Range up to 9V


    Original     		PDF APL5883 300mA 300mA OT-89 APL5883 100mA OT-89 SOT89 voltage regulator marking code 93

    APA2059

    Abstract: stereo 2W "amplifier class ab" apa2068 audio amplifier SOP monitor lcd power supply lcd monitor apa2020
    Text: Anpec Electronics Corporation 茂達電子股份有限公司 進階搜尋 首頁 產品資訊 關於茂達 產品資訊 解決方案 新聞&活動 網站地圖 投資關係 English 人力資源


    Original     		PDF DIP-16 OP-16 OP-24 TQFN3x3-16 APA3002 APA4838 APA4863 APA2059 stereo 2W "amplifier class ab" apa2068 audio amplifier SOP monitor lcd power supply lcd monitor apa2020

    JESD22JESD22

    Abstract: No abstract text available
    Text: APM6010K N-Channel Enhancement Mode MOSFET Features • Pin Configuration D D 60V/5A, D D RDS ON =65mΩ (max.) @ VGS=10V RDS(ON)=90mΩ (max.) @ VGS=4.5V • • • S S Super High Dense Cell Design S G Reliable and Rugged Top View of SOP-8 Lead Free and Green Devices Available


    Original     		PDF APM6010K APM6010 JESD-22, JESD22JESD22

    apm1110

    Abstract: code diode transient APM1110K
    Text: APM1110K N-Channel Enhancement Mode MOSFET Features • Pin Configuration D D 100V/2.7A, D D RDS ON =140mΩ (typ.) @ VGS=10V RDS(ON)=185mΩ (typ.) @ VGS=4.5V • • • S S ESD Protected S G Reliable and Rugged Top View of SOP-8 Lead Free and Green Devices Available


    Original     		PDF APM1110K 00V/2 APM1110 JESD-22, code diode transient APM1110K

    APM4008N

    Abstract: APM4008 APM4008NU ANPEC A102 A104 A108 B102 JESD-22 APM40
    Text: APM4008NU N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/60A, RDS ON =6.5mΩ (typ.) @ VGS=10V G RDS(ON)=10.5mΩ (typ.) @ VGS=4.5V • • • D Super High Dense Cell Design S Reliable and Rugged Top View of TO-252-3 Lead Free and Green Devices Available (RoHS


    Original     		PDF APM4008NU 0V/60A, O-252-3 APM4008N APM4008N JESD-22, APM4008 APM4008NU ANPEC A102 A104 A108 B102 JESD-22 APM40

    APM6006NFP

    Abstract: APM6006 21M025 APM60
    Text: APM6006NFP N-Channel Enhancement Mode MOSFET Features • Pin Description SD 60V/34A, G RDS ON =21mΩ (typ.) @ VGS=10V RDS(ON)=29mΩ (typ.) @ VGS=4.5V • • Reliable and Rugged Top View of TO-220-FP Lead Free and Green Devices Available D (RoHS Compliant)


    Original     		PDF APM6006NFP 0V/34A, O-220-FP APM6006N O-220-FP JESD-22, APM6006NFP APM6006 21M025 APM60

    APM60

    Abstract: No abstract text available
    Text: APM6005NF N-Channel Enhancement Mode MOSFET Features • Pin Description SD 60V/80A, G RDS ON =4.5mΩ (typ.) @ VGS=10V • • • Avalanche Rated Reliable and Rugged Top View of TO-220 Lead Free and Green Devices Available (RoHS Compliant) D Applications


    Original     		PDF APM6005NF 0V/80A, O-220 APM6005N O-220 JESD-22, APM60

    APM3109

    Abstract: APM3109NU MOSFET N 30V 30A 252 A102 A104 A108 B102 JESD-22 J-STD-020D
    Text: APM3109NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/50A, D RDS ON =7.5mΩ (typ.) @ VGS=10V G RDS(ON)=12mΩ (typ.) @ VGS=4.5V • • • • S Super High Dense Cell Design Top View of TO-252-3 Reliable and Rugged D Avalanche Rated


    Original     		PDF APM3109NU 0V/50A, O-252-3 APM3109N APM31093 JESD-22, APM3109 APM3109NU MOSFET N 30V 30A 252 A102 A104 A108 B102 JESD-22 J-STD-020D

    APM9926C

    Abstract: M9926 GEM2928 A108 B102 JESD-22 APM9926CCG APM9926CC
    Text: APM9926CCG Dual N-Channel Enhancement Mode MOSFET Features • Pin Description D2 D2 D1 D1 20V/5A , RDS ON =25mΩ(typ.) @ VGS=4.5V RDS(ON)=34mΩ(typ.) @ VGS=2.5V • • • G2 S2 G1 S1 Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available


    Original     		PDF APM9926CCG APM9926C APM9926C M9926C JESD-22, M9926 GEM2928 A108 B102 JESD-22 APM9926CCG APM9926CC

    APM2605

    Abstract: APM2605C JESD-22 J-STD-020D MARKING A104 SOT AAAX
    Text: APM2605C P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-4.5A, D D S RDS ON =43mΩ(typ.) @ VGS=10V RDS(ON)=60mΩ(typ.) @ VGS=4.5V • • • Super High Dense Cell Design D D G Top View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available


    Original     		PDF APM2605C -30V/-4 OT-23-6 APM2605 JESD-22, APM2605 APM2605C JESD-22 J-STD-020D MARKING A104 SOT AAAX

    APM9935

    Abstract: APM9935K B102 JESD-22
    Text: APM9935K Dual P-Channel Enhancement Mode MOSFET Features • Pin Description D1 D1 D2 D2 -20V/-6A, RDS ON =30mΩ(typ.) @ VGS=-4.5V RDS(ON)=38mΩ(typ.) @ VGS=-2.5V • • • S1 G1 S2 G2 Super High Dense Cell Design Reliable and Rugged Top View of SOP − 8


    Original     		PDF APM9935K -20V/-6A, JESD-22, APM9935 APM9935K B102 JESD-22

    APM1104P

    Abstract: 20A, 50V, P-Channel APM1104PG apm11
    Text: APM1104PG P-Channel Enhancement Mode MOSFET Features • Pin Description -100V/-90A, RDS ON =15mΩ (Typ.) @ VGS=-10V RDS(ON)=18mΩ (Typ.) @ VGS=-4.5V • • D G S Reliable and Rugged Top View of TO-263-3 Lead Free and Green Devices Available (RoHS Compliant)


    Original     		PDF APM1104PG -100V/-90A, O-263-3 APM1104P APM1104P JESD-22, 20A, 50V, P-Channel APM1104PG apm11

    apm30

    Abstract: No abstract text available
    Text: APM3015NFP N-Channel Enhancement Mode MOSFET Features • Pin Description SD 30V/50A, G RDS ON =12mΩ (typ.) @ VGS=10V RDS(ON)=17mΩ (typ.) @ VGS=4.5V • • • Super High Dense Cell Design Top View of TO-220 -FP Reliable and Rugged Lead Free and Green Devices Available


    Original     		PDF APM3015NFP 0V/50A, O-220 APM3015N O-220-FP JESD-22, apm30

    "Microphone Preamplifier" 1.5V transistor

    Abstract: "Microphone Preamplifier" 1.5V A102 APA4800
    Text: APA4800 Stereo 290mW 8Ω Speaker Driver Features Gereral Description • The APA4800 is an integrated class AB stereo headphone amplifier contained in an SOP-8 or a DIP-8 plastic package. Operating Voltage -Single Supply from 3V to 7V The APA4800 is capable of delivering 290mW of maximum output power to an 8Ω load with less than 10%


    Original     		PDF APA4800 290mW APA4800 100dB -65dB 290mW 16190mW "Microphone Preamplifier" 1.5V transistor "Microphone Preamplifier" 1.5V A102

    Untitled

    Abstract: No abstract text available
    Text: APL3213/A Li+ Charger Protection IC Features General Description • Input Over-Voltage Protection The APL3213/A provide Li+ charger protection against • • Over-Temperature Protection High Immunity of False Triggering over-voltage. The IC is designed to monitor input voltage.


    Original     		PDF APL3213/A APL3213/A IEC61000-4-2 JESD-22, MIL-STD-883-3015 100mA

    APM4820

    Abstract: APM4820K APM48 10 35 SOP DIODE c245
    Text: APM4820K N-Channel Enhancement Mode MOSFET Pin Description Features • D D 30V/11A, D D RDS ON =12mΩ(Typ.) @ VGS = 10V RDS(ON) =18mΩ(Typ.) @ VGS = 4.5V S S • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available


    Original     		PDF APM4820K 0V/11A, APM4820 JESD-22, APM4820K APM48 10 35 SOP DIODE c245

    APM3006N

    Abstract: APM3006 APM3006NU TO-252 AA footprint A102 id40ac 48m TO-252
    Text: APM3006NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/50A, RDS ON =4.8mΩ (typ.) @ VGS=10V G RDS(ON)=7mΩ (typ.) @ VGS=4.5V • • • D Super High Dense Cell Design S Top View of TO-252 Reliable and Rugged Lead Free and Green Devices Available


    Original     		PDF APM3006NU 0V/50A, O-252 APM3006N APM3006N APM3006 APM3006NU TO-252 AA footprint A102 id40ac 48m TO-252

    apm2556n

    Abstract: APM2556NU apm2556 apm*2556n apm2556n mosfet apm255 ap*2556 ANPEC A102 diode A102
    Text: APM2556NU N-Channel Enhancement Mode MOSFET Features • Pin Description 25V/60A, RDS ON =4.5mΩ (typ.) @ VGS=10V RDS(ON)=7.5mΩ (typ.) @ VGS=4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available


    Original     		PDF APM2556NU 5V/60A, O-252 APM2556N APM2556N APM2556NU apm2556 apm*2556n apm2556n mosfet apm255 ap*2556 ANPEC A102 diode A102

    A102

    Abstract: APM4350KP code diode transient
    Text: APM4350KP N-Channel Enhancement Mode MOSFET Pin Description Features • 30V/60A, RDS ON =7.5mΩ (typ.) @ VGS = 10V RDS(ON) =11.5mΩ (typ.) @ VGS = 4.5V • • • • D D D D Super High Dense Cell Design G S Avalanche Rated S S Reliable and Rugged Lead Free and Green Devices Available


    Original     		PDF APM4350KP 0V/60A, APM4350 A102 APM4350KP code diode transient

    APM4354

    Abstract: APM4354KP marking code KP A102
    Text: APM4354KP N-Channel Enhancement Mode MOSFET Pin Description Features • 30V/70A, D RDS ON =4.5mΩ (typ.) @ VGS = 10V D D D G RDS(ON) =6mΩ (typ.) @ VGS = 4.5V • • • • S S Super High Dense Cell Design S Avalanche Rated Top View of KPAK Reliable and Rugged


    Original     		PDF APM4354KP 0V/70A, APM4354 APM4354 APM4354KP marking code KP A102

    Untitled

    Abstract: No abstract text available
    Text: APM2301CA P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-3A D RDS ON = 56mΩ (typ.) @ VGS= -4.5V RDS(ON)= 85mΩ (typ.) @ VGS= -2.5V RDS(ON)= 135mΩ (typ.) @ VGS= -1.8V • • • G Super High Dense Cell Design S Reliable and Rugged


    Original     		PDF APM2301CA -20V/-3A OT23-3 APM2301C OT-23-3

    A102

    Abstract: APM3040ND ISD05
    Text: APM3040ND N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/3A, RDS ON =31mΩ(typ.) @ VGS=10V G RDS(ON)=35mΩ(typ.) @ VGS=4.5V D RDS(ON)=55mΩ(typ.) @ VGS=2.5V • • • S Top View of SOT-89 Super High Dense Cell Design Reliable and Rugged


    Original     		PDF APM3040ND OT-89 APM3040N APM30460 A102 APM3040ND ISD05