GR-63-CORE
Abstract: XMT5370622 5968-1101E 70950A
Text: XMT5370622 Characterization Report on 622 Mb/s Logic Interface Laser Transmitter for OC12/STM4 Preliminary Application Note 1148 Introduction The XMT5370622 laser transmitter is a high performance, uncooled optical transmitter for ITU-T Recommendation G.957 SDH and ANSI SONET
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XMT5370622
OC12/STM4
GR-63-CORE.
5968-1101E
5968-1101E
GR-63-CORE
70950A
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Untitled
Abstract: No abstract text available
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK CASE 369–07 ISSUE M DATE 01/02/2000 SCALE 1:1 C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 DIM A B C D E F G H J K R S V A 1 2 3 S –T– K SEATING
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TO-251 footprint
Abstract: On semiconductor date Code dpak YEAR A TO-251 Outline 369D 369D-01
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK−3 SINGLE GAUGE CASE 369D−01 ISSUE B DATE 03 DEC 2003 SCALE 1:1 C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 −T− SEATING PLANE
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369D-01
TO-251 footprint
On semiconductor date Code dpak YEAR A
TO-251 Outline
369D
369D-01
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Untitled
Abstract: No abstract text available
Text: CHAPTER 3 Case Outlines and Package Dimensions http://onsemi.com 626 CASE OUTLINES AND PACKAGE DIMENSIONS AXIAL LEAD, DO−41 CASE 59−10 ISSUE S B K D F A SCALE 1:1 F DATE 01/28/2002 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
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DO-41
OD-123FL
OD-123
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14e471
Abstract: 10e471 14E471K 10e271 10e471k 14e391k VZ14D511K 10E391K sincera 14D431K 7D220K
Text: W O R L D P R O D U C M e t a l O x i d e Va r i s t o r s WORLD PRODUCTS, INC. T S World Products Inc. 19654 8th St. East, Sonoma, CA, USA, 95476 . . Phone: 707 996-5201 . . Fax: (707) 996-3380 Metal Oxide Varistors ISO 9002:1994 EN ISO 9002:1994; BS EN ISO 9002:1994; ANSI/ASQ Q9002:1994
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Q9002
Ser00
300VAC
EIA-468-B
14e471
10e471
14E471K
10e271
10e471k
14e391k
VZ14D511K
10E391K
sincera 14D431K
7D220K
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On semiconductor date Code dpak YEAR A
Abstract: 175AA CASE 175AA-01 On semiconductor date Code dpak
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK 5, CENTER LEAD CROP CASE 175AA−01 ISSUE A DATE 13 SEP 2004 SCALE 1:1 −T− SEATING PLANE C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R R1 Z A S 1 2 3 4 5
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175AA-01
175AA
On semiconductor date Code dpak YEAR A
175AA
CASE 175AA-01
On semiconductor date Code dpak
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On semiconductor date Code dpak YEAR A
Abstract: No abstract text available
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK SINGLE GAUGE CASE 369C ISSUE O 4 DATE 24 SEP 2001 1 2 3 SCALE 1:1 C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE -T- E R 4 Z A S 1 2 3 U K
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369A-13
Abstract: MT1 MT2 GATE
Text: –T– C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 3 U K F J L H D G STYLE 1: PIN 1. 2. 3. 4. 2 PL 0.13 0.005 BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4.
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369A-13
Abstract: 13AB 13-AB On semiconductor date Code dpak YEAR A
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK CASE 369A–13 ISSUE AB DATE 07/27/2001 SCALE 1:1 C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE –T– E R 4 Z A S 1 2 3 U K F J L H D 2 PL
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369A-13
Abstract: No abstract text available
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK CASE 369A–13 ISSUE AA DATE 01/02/2000 SCALE 1:1 –T– C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 3 U K F J L H D G STYLE 1:
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030personal
369A-13
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SOD123FL
Abstract: transistor y 5910
Text: Package Outline Dimensions For information on tape and reel packaging specifications, please download or order the ON Semiconductor Tape and Reel Packaging Specification Brochure part number BRD8011/D . The PDF is available on the ON Semiconductor website at: .
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BRD8011/D)
com/pub/Collateral/BRD8011-D
DO-41
SOD123FL
transistor y 5910
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Untitled
Abstract: No abstract text available
Text: CHAPTER 3 Case Outlines and Package Dimensions http://onsemi.com 3356 CASE OUTLINES AND PACKAGE DIMENSIONS TO–92 TO–226 CASE 29–11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R
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ON semiconductor 340g
Abstract: No abstract text available
Text: NTHS5443T1 Product Preview P-Channel 2.5 V G-S MOSFET http://onsemi.com S G D PRODUCT SUMMARY VDS (V) –20 RDS(on) (Ω) ID (A) 0.065 @ VGS = –4.5 V "4.9 0.074 @ VGS = –3.6 V "4.6 0.110 @ VGS = –2.5 V "3.8 P–Channel MOSFET ChipFET CASE 1206A STYLE 1
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NTHS5443T1
ON semiconductor 340g
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F 5M 365 R
Abstract: 5M 365 R SOT23 MARKING N02 n02 mosfet 948S
Text: NTUD01N02 Product Preview Power MOSFET 100 mAmps, 20 Volts Dual N–Channel SC–88 • • • • • • 2.5 V Gate Drive with Low On–Resistance Low Threshold Voltage: Vth = 0.5 to 1.5 V, Ideal for Portable High Speed Enhancement Mode Small Package Easily Designed Drive Circuits
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NTUD01N02
88/SOTU
F 5M 365 R
5M 365 R
SOT23 MARKING N02
n02 mosfet
948S
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Untitled
Abstract: No abstract text available
Text: CHAPTER 3 Case Outlines and Package Dimensions http://onsemi.com 350 CASE OUTLINES AND PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AA −T− B F T NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL
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O-220
21A-09
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Abstract: No abstract text available
Text: NTHS5404T1 Product Preview N-Channel 2.5 V G-S MOSFET http://onsemi.com D G S PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.030 @ VGS = 4.5 V "7.2 0.045 @ VGS = 2.5 V "5.9 N–Channel MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating
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Abstract: No abstract text available
Text: NTHS5441T1 Product Preview P-Channel 2.5 V G-S MOSFET http://onsemi.com S G D PRODUCT SUMMARY VDS (V) –20 rDS(on) (Ω) ID (A) 0.055 @ VGS = –4.5 V "5.3 0.06 @ VGS = –3.6 V "5.1 0.083 @ VGS = –2.5 V "4.3 P–Channel MOSFET ChipFET CASE 1206A STYLE 1
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NTHS5441T1
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Untitled
Abstract: No abstract text available
Text: NTGS3446T1 Power MOSFET 5.3 Amps, 20 Volts N–Channel TSOP–6 Features • • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature
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NTGS3446T1
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Abstract: No abstract text available
Text: NTD3055-094 Advance Information Power MOSFET 12 Amps, 60 Volts N–Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 12 AMPERES 60 VOLTS RDS on = 94 mΩ
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NTD3055-094
tpv10
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Untitled
Abstract: No abstract text available
Text: NGD15N41CL Product Preview Ignition IGBT 15 Amps, 410 Volts N–Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses
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NGD15N41CL
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Abstract: No abstract text available
Text: NTHD5903T1 Product Preview Dual P-Channel 2.5 V G-S MOSFET http://onsemi.com S1 S2 G2 G1 PRODUCT SUMMARY VDS (V) –20 D2 D1 rDS(on) (Ω) ID (A) 0.155 @ VGS = –4.5 V "2.9 0.180 @ VGS = –3.6 V "2.7 0.260 @ VGS = –2.5 V "2.2 P–Channel MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
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F 5M 365 R
Abstract: No abstract text available
Text: NTHD5904T1 Product Preview Dual N-Channel 2.5 V G-S MOSFET http://onsemi.com D2 D1 G2 G1 VDS (V) 20 S2 S1 PRODUCT SUMMARY rDS(on) (Ω) ID (A) 0.075 @ VGS = 4.5 V "4.2 0.134 @ VGS = 2.5 V "3.1 N–Channel MOSFET N–Channel MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
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NTHD5904T1
F 5M 365 R
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A6 TSOP-6
Abstract: No abstract text available
Text: NTHD5902T1 Product Preview Dual N-Channel 30 V D-S MOSFET http://onsemi.com D1 D2 G1 G2 PRODUCT SUMMARY S1 VDS (V) 30 rDS(on) (Ω) ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 S2 N–Channel MOSFET N–Channel MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
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NTHD5902T1
A6 TSOP-6
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C-0120
Abstract: No abstract text available
Text: T F TMos Package Outlines - A - ► \ 1 C 1 i I t T t- E - * l •*— D 2 PL I s e a t in g p la n e NOTES. 1. DIM ENSIONING AND TOLERANCING PER ANSI Y14 5M, 1982 2 CONTROLLING DIMENSION INCH 3. ALL RULES AND NOTES ASSOCIATED WITH STYLE 3. PIN 1 GATE
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T0-204AA
C-0120
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