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    GR-63-CORE

    Abstract: XMT5370622 5968-1101E 70950A
    Text: XMT5370622 Characterization Report on 622 Mb/s Logic Interface Laser Transmitter for OC12/STM4 Preliminary Application Note 1148 Introduction The XMT5370622 laser transmitter is a high performance, uncooled optical transmitter for ITU-T Recommendation G.957 SDH and ANSI SONET


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    PDF XMT5370622 OC12/STM4 GR-63-CORE. 5968-1101E 5968-1101E GR-63-CORE 70950A

    Untitled

    Abstract: No abstract text available
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK CASE 369–07 ISSUE M DATE 01/02/2000 SCALE 1:1 C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 DIM A B C D E F G H J K R S V A 1 2 3 S –T– K SEATING


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    TO-251 footprint

    Abstract: On semiconductor date Code dpak YEAR A TO-251 Outline 369D 369D-01
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK−3 SINGLE GAUGE CASE 369D−01 ISSUE B DATE 03 DEC 2003 SCALE 1:1 C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 −T− SEATING PLANE


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    PDF 369D-01 TO-251 footprint On semiconductor date Code dpak YEAR A TO-251 Outline 369D 369D-01

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    Abstract: No abstract text available
    Text: CHAPTER 3 Case Outlines and Package Dimensions http://onsemi.com 626 CASE OUTLINES AND PACKAGE DIMENSIONS AXIAL LEAD, DO−41 CASE 59−10 ISSUE S B K D F A SCALE 1:1 F DATE 01/28/2002 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.


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    PDF DO-41 OD-123FL OD-123

    14e471

    Abstract: 10e471 14E471K 10e271 10e471k 14e391k VZ14D511K 10E391K sincera 14D431K 7D220K
    Text: W O R L D P R O D U C M e t a l O x i d e Va r i s t o r s WORLD PRODUCTS, INC. T S World Products Inc. 19654 8th St. East, Sonoma, CA, USA, 95476 . . Phone: 707 996-5201 . . Fax: (707) 996-3380 Metal Oxide Varistors ISO 9002:1994 EN ISO 9002:1994; BS EN ISO 9002:1994; ANSI/ASQ Q9002:1994


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    PDF Q9002 Ser00 300VAC EIA-468-B 14e471 10e471 14E471K 10e271 10e471k 14e391k VZ14D511K 10E391K sincera 14D431K 7D220K

    On semiconductor date Code dpak YEAR A

    Abstract: 175AA CASE 175AA-01 On semiconductor date Code dpak
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK 5, CENTER LEAD CROP CASE 175AA−01 ISSUE A DATE 13 SEP 2004 SCALE 1:1 −T− SEATING PLANE C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R R1 Z A S 1 2 3 4 5


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    PDF 175AA-01 175AA On semiconductor date Code dpak YEAR A 175AA CASE 175AA-01 On semiconductor date Code dpak

    On semiconductor date Code dpak YEAR A

    Abstract: No abstract text available
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK SINGLE GAUGE CASE 369C ISSUE O 4 DATE 24 SEP 2001 1 2 3 SCALE 1:1 C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE -T- E R 4 Z A S 1 2 3 U K


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    369A-13

    Abstract: MT1 MT2 GATE
    Text: –T– C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 3 U K F J L H D G STYLE 1: PIN 1. 2. 3. 4. 2 PL 0.13 0.005 BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4.


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    369A-13

    Abstract: 13AB 13-AB On semiconductor date Code dpak YEAR A
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK CASE 369A–13 ISSUE AB DATE 07/27/2001 SCALE 1:1 C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE –T– E R 4 Z A S 1 2 3 U K F J L H D 2 PL


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    369A-13

    Abstract: No abstract text available
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK CASE 369A–13 ISSUE AA DATE 01/02/2000 SCALE 1:1 –T– C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 3 U K F J L H D G STYLE 1:


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    PDF 030personal 369A-13

    SOD123FL

    Abstract: transistor y 5910
    Text: Package Outline Dimensions For information on tape and reel packaging specifications, please download or order the ON Semiconductor Tape and Reel Packaging Specification Brochure part number BRD8011/D . The PDF is available on the ON Semiconductor website at: .


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    PDF BRD8011/D) com/pub/Collateral/BRD8011-D DO-41 SOD123FL transistor y 5910

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    Abstract: No abstract text available
    Text: CHAPTER 3 Case Outlines and Package Dimensions http://onsemi.com 3356 CASE OUTLINES AND PACKAGE DIMENSIONS TO–92 TO–226 CASE 29–11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R


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    ON semiconductor 340g

    Abstract: No abstract text available
    Text: NTHS5443T1 Product Preview P-Channel 2.5 V G-S MOSFET http://onsemi.com S G D PRODUCT SUMMARY VDS (V) –20 RDS(on) (Ω) ID (A) 0.065 @ VGS = –4.5 V "4.9 0.074 @ VGS = –3.6 V "4.6 0.110 @ VGS = –2.5 V "3.8 P–Channel MOSFET ChipFET CASE 1206A STYLE 1


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    PDF NTHS5443T1 ON semiconductor 340g

    F 5M 365 R

    Abstract: 5M 365 R SOT23 MARKING N02 n02 mosfet 948S
    Text: NTUD01N02 Product Preview Power MOSFET 100 mAmps, 20 Volts Dual N–Channel SC–88 • • • • • • 2.5 V Gate Drive with Low On–Resistance Low Threshold Voltage: Vth = 0.5 to 1.5 V, Ideal for Portable High Speed Enhancement Mode Small Package Easily Designed Drive Circuits


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    PDF NTUD01N02 88/SOTU F 5M 365 R 5M 365 R SOT23 MARKING N02 n02 mosfet 948S

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    Abstract: No abstract text available
    Text: CHAPTER 3 Case Outlines and Package Dimensions http://onsemi.com 350 CASE OUTLINES AND PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AA −T− B F T NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL


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    PDF O-220 21A-09

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    Abstract: No abstract text available
    Text: NTHS5404T1 Product Preview N-Channel 2.5 V G-S MOSFET http://onsemi.com D G S PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.030 @ VGS = 4.5 V "7.2 0.045 @ VGS = 2.5 V "5.9 N–Channel MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating


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    PDF NTHS5404T1

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    Abstract: No abstract text available
    Text: NTHS5441T1 Product Preview P-Channel 2.5 V G-S MOSFET http://onsemi.com S G D PRODUCT SUMMARY VDS (V) –20 rDS(on) (Ω) ID (A) 0.055 @ VGS = –4.5 V "5.3 0.06 @ VGS = –3.6 V "5.1 0.083 @ VGS = –2.5 V "4.3 P–Channel MOSFET ChipFET CASE 1206A STYLE 1


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    PDF NTHS5441T1

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    Abstract: No abstract text available
    Text: NTGS3446T1 Power MOSFET 5.3 Amps, 20 Volts N–Channel TSOP–6 Features • • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature


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    PDF NTGS3446T1

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    Abstract: No abstract text available
    Text: NTD3055-094 Advance Information Power MOSFET 12 Amps, 60 Volts N–Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 12 AMPERES 60 VOLTS RDS on = 94 mΩ


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    PDF NTD3055-094 tpv10

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    Abstract: No abstract text available
    Text: NGD15N41CL Product Preview Ignition IGBT 15 Amps, 410 Volts N–Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses


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    PDF NGD15N41CL

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    Abstract: No abstract text available
    Text: NTHD5903T1 Product Preview Dual P-Channel 2.5 V G-S MOSFET http://onsemi.com S1 S2 G2 G1 PRODUCT SUMMARY VDS (V) –20 D2 D1 rDS(on) (Ω) ID (A) 0.155 @ VGS = –4.5 V "2.9 0.180 @ VGS = –3.6 V "2.7 0.260 @ VGS = –2.5 V "2.2 P–Channel MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)


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    PDF NTHD5903T1

    F 5M 365 R

    Abstract: No abstract text available
    Text: NTHD5904T1 Product Preview Dual N-Channel 2.5 V G-S MOSFET http://onsemi.com D2 D1 G2 G1 VDS (V) 20 S2 S1 PRODUCT SUMMARY rDS(on) (Ω) ID (A) 0.075 @ VGS = 4.5 V "4.2 0.134 @ VGS = 2.5 V "3.1 N–Channel MOSFET N–Channel MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)


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    PDF NTHD5904T1 F 5M 365 R

    A6 TSOP-6

    Abstract: No abstract text available
    Text: NTHD5902T1 Product Preview Dual N-Channel 30 V D-S MOSFET http://onsemi.com D1 D2 G1 G2 PRODUCT SUMMARY S1 VDS (V) 30 rDS(on) (Ω) ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 S2 N–Channel MOSFET N–Channel MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)


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    PDF NTHD5902T1 A6 TSOP-6

    C-0120

    Abstract: No abstract text available
    Text: T F TMos Package Outlines - A - ► \ 1 C 1 i I t T t- E - * l •*— D 2 PL I s e a t in g p la n e NOTES. 1. DIM ENSIONING AND TOLERANCING PER ANSI Y14 5M, 1982 2 CONTROLLING DIMENSION INCH 3. ALL RULES AND NOTES ASSOCIATED WITH STYLE 3. PIN 1 GATE


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    PDF T0-204AA C-0120