Untitled
Abstract: No abstract text available
Text: 4 3 2 ECO# ZONE 1093 ALL NOTES: B 1. INTERPRET DRAWING PER ANSI Y14.5M-1994. 2. ELECTRICAL SPECIFICATIONS: 2.1. CAPACITANCE RANGE: 0.6 [pF] TO 12.0 [pF]. 2.2. DC WORKING VOLTAGE AT 12.0 [pF]: 125 [VOLTS]. 2.3. DC WITHSTANDING VOLTAGE AT 12.0 [pF]: 250 [VOLTS].
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5M-1994.
1500g
NMA1P12
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Untitled
Abstract: No abstract text available
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK CASE 936–03 ISSUE B DATE 01/07/1994 SCALE 1:1 –T– K OPTIONAL CHAMFER A TERMINAL 4 E U S B F V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. TAB CONTOUR OPTIONAL WITHIN DIMENSIONS
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Abstract: No abstract text available
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK CASE 936A–02 ISSUE A DATE 01/07/1994 SCALE 1:1 –T– OPTIONAL CHAMFER A TERMINAL 6 E U S K B V H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. TAB CONTOUR OPTIONAL WITHIN DIMENSIONS
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Untitled
Abstract: No abstract text available
Text: 4 3 2 ECO# ZONE 1093 ALL 1 REVISION HISTORY DESCRIPTION INITIAL DIGITAL RELEASE REV B DRAWN APPROVED EC|12/27/12 TD|01/15/13 .031 .020 A .110 A SECTION A-A SCALE 4 : 1 B B NOTES: .31 OVER EPOXY FILLET 1. INTERPRET DRAWING PER ANSI Y14.5M-1994. 2. ELECTRICAL SPECIFICATIONS:
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5M-1994.
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Untitled
Abstract: No abstract text available
Text: Package Outline Dimensions C R M 1 B –A– 2 3 Z 4 DIM A B C D F G J L M N R Y Z N 1 PIN 1 2 3 L 4 –T– SEATING PLANE J F G F D Y 4 PL 0.136 0.005 T A M DAMBAR TRIM ZONE: THIS IS INCLUDED WITHIN DIM. “F” 8 PL M NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME
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IGBT 60A spice model
Abstract: 8 pin ic 3842 motorola an569 thermal IR 948P 0.65mm pitch BGA socket bt 2323 DFN 3.3X3.3 HTC Korea SPICE thyristor model 527 MOSFET TRANSISTOR motorola
Text: Semiconductor Packages and Case Outlines Reference Manual CASERM/D Rev. 2, September−2006 SCILLC, 2006 Previous Edition © 2003 “All Rights Reserved’’ CASERM ChipFET is a trademark of Vishay Siliconix. POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.
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September-2006
IGBT 60A spice model
8 pin ic 3842
motorola an569 thermal
IR 948P
0.65mm pitch BGA socket
bt 2323
DFN 3.3X3.3
HTC Korea
SPICE thyristor model
527 MOSFET TRANSISTOR motorola
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MARKING code u1 sot 563
Abstract: MT 1379 DEC sot-353 marking B2 marking ayWW SOT23
Text: CHAPTER 3 Case Outlines and Package Dimensions http://onsemi.com 874 CASE OUTLINES AND PACKAGE DIMENSIONS SOT−23 CASE 1212−01 ISSUE O DATE 07/03/1996 SCALE 2:1 A 5 E 1 A2 0.05 S B D A1 4 2 NOTES: 1. DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES
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OT-23
OT-89
MARKING code u1 sot 563
MT 1379 DEC
sot-353 marking B2
marking ayWW SOT23
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Untitled
Abstract: No abstract text available
Text: Chapter Nine Packaging Information The packaging information for each device type can be determined in one of two ways: by the specific case number indicated on the individual data sheet for example, the case number for MPC9600 is 932 , or by using the Case
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MPC9600
MC88915T
MC88LV915T
MC88LV926
MPC9315
MPC9330
MPC9331
MPC9350
MPC9351
MPC93H51
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micro fineline BGA
Abstract: EPM240 EPM570-144TQFP altera TQFP 32 PACKAGE bsc part 2 date sheet fbga Substrate design guidelines EPM1270 EPM2210 EPM240G EPM240Z
Text: 7. Package Information MII51007-2.1 Introduction This chapter provides package information for Altera’s MAX II devices, and includes these sections: • “Board Decoupling Guidelines” on page 7–1 ■ “Device and Package Cross Reference” on page 7–1
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MII51007-2
144-Pin
68-Pin
144Pin
100-pin
micro fineline BGA
EPM240
EPM570-144TQFP
altera TQFP 32 PACKAGE
bsc part 2 date sheet
fbga Substrate design guidelines
EPM1270
EPM2210
EPM240G
EPM240Z
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Untitled
Abstract: No abstract text available
Text: Case Dimensions D SUFFIX PLASTIC 8 SOIC PACKAGE CASE 751-06 ISSUE T D A 8 5 0.25 H E 1 M B M 4 h B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSIONS ARE IN MILLIMETER. 3. DIMENSION D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
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Abstract: No abstract text available
Text: CHAPTER 3 Case Outlines and Package Dimensions http://onsemi.com 3356 CASE OUTLINES AND PACKAGE DIMENSIONS TO–92 TO–226 CASE 29–11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R
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Abstract: No abstract text available
Text: Freescale Semiconductor, Inc. Case Dimensions D SUFFIX PLASTIC 8 SOIC PACKAGE CASE 751-06 ISSUE T D A 8 5 0.25 H E 1 M B M 4 h Freescale Semiconductor, Inc. B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSIONS ARE IN MILLIMETER.
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EB202
Abstract: AR305 "Good RF Construction Practices and Techniques" transistors EB202 MOTOROLA circuit for mrf150 AN749 ford eec V ar164 TRANSISTOR C 6090 lg AN762 RF AMPLIFIER
Text: SG46/D REV 21 Wireless RF, IF and Transmitter Selector Guide Wireless RF, IF and Transmitter Selector Guide While Motorola is a worldwide leader in semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF
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SG46/D
EB202
AR305
"Good RF Construction Practices and Techniques"
transistors EB202
MOTOROLA circuit for mrf150
AN749
ford eec V
ar164
TRANSISTOR C 6090 lg
AN762 RF AMPLIFIER
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MPX5010 Rev 10, 05/2005 Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated MPX5010 MPXV5010G SERIES INTEGRATED PRESSURE SENSOR 0 to 10 kPa 0 to 1.45 psi 0.2 to 4.7 V OUTPUT
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MPX5010
MPXV5010G
MPX5010/MPXV5010G
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Abstract: No abstract text available
Text: CHAPTER 3 Case Outlines and Package Dimensions http://onsemi.com 672 http://onsemi.com 673 CASE OUTLINES AND PACKAGE DIMENSIONS 5 LEAD TO−220 THA5 CASE 314A−03 ISSUE E −T− SCALE 1:1 B −P− Q C A F L G 5X M T P K 5X S D 0.014 (0.356) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI
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O-220
14A-03
128BE
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Abstract: No abstract text available
Text: CASE OUTLINES AND PACKAGE DIMENSIONS 5 LEAD TO−220 THA5 CASE 314A−03 ISSUE E −T− SCALE 1:1 B −P− Q C A F L G 5X M T P K 5X S D 0.014 (0.356) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION D DOES NOT INCLUDE
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O-220
14A-03
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DCDD SOT23-5
Abstract: corning frequency oven marking code H.5 Sot 23-5 10134 motorola MARKING BB SOT23-5 Newmarket Transistors
Text: MCCF33095 MC33095 Advance Information Integral Alternator Regulator The MCCF33095 Flip–Chip and MC33095 (Surface Mount) are regulator control integrated circuits designed for use in automotive 12 V alternator charging systems. Few external components are required for full
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MCCF33095
MC33095
MCCF33095
DCDD SOT23-5
corning frequency oven
marking code H.5 Sot 23-5
10134 motorola
MARKING BB SOT23-5
Newmarket Transistors
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C8PL
Abstract: 369G-01 1206A-01
Text: A TO−22 TO−226 CASE 29−11 ISSUE AL B R P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.
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O-226)
206A-01
206A-02
206A-03.
C8PL
369G-01
1206A-01
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Untitled
Abstract: No abstract text available
Text: CHAPTER 2 Case Outlines and Package Dimensions http://onsemi.com 83 CASE OUTLINES AND PACKAGE DIMENSIONS 16 PIN QFN CASE 485G-01 ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D APPLIES TO PLATED TERMINAL
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485G-01
5M-1994.
89A-01
89A-02.
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Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MPX2202 Rev 3, 05/2005 200 kPa On-Chip Temperature Compensated & Calibrated Pressure Sensors MPX2202 SERIES The MPX2202/MPXV2202G device series is a silicon piezoresistive pressure sensor providing a highly accurate and linear voltage output - directly
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MPX2202
MPX2202/MPXV2202G
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Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MPX2053 Rev 4, 05/2005 50 kPa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensors MPX2053 MPXV2053G SERIES The MPX2053/MPXV2053G device is a silicon piezoresistive pressure sensor providing a highly accurate and linear voltage output - directly proportional to the
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MPX2053
MPXV2053G
MPX2053/MPXV2053G
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MPX2102 Rev 4, 05/2005 100 kPa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensors The MPX2102/MPXV2102G series device is a silicon piezoresistive pressure sensor providing a highly accurate and linear voltage output directly proportional to
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MPX2102
MPX2102/MPXV2102G
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motorola 304
Abstract: MRFG9801 MRFG9801R hp89 HP8970A dual-gate K31S HP11590B Eaton 2075
Text: Order this document by MRFG9801/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRFG9801 MRFG9801R Advance Information The RF Line N-Channel Dual-Gate G a A s Field-Effect Transistor SURFACE-MOUNTED N-CHANNEL DUAL-GATE GaAs FIELD-EFFECT TRANSISTOR . . . depletion mode dual-gate MES FET designed for high frequency amplifier
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MRFG9801/D
MRFG9801/9801R
MRFG9801/D
motorola 304
MRFG9801
MRFG9801R
hp89
HP8970A
dual-gate
K31S
HP11590B
Eaton 2075
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MRF966
Abstract: MRF9661 HP8970A HP11590B mrf9661 motorola TRANSISTOR 318a Eaton 2075 TRANSISTOR MPS A72 2f 1001 MRFG9661R
Text: Order this document by MRFG9661/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRFG9661 MRFG9661R Advance Information The RF Line N-Channel Dual-Gate GaAs Field-Effect Transistor SURFACE-MOUNTED N-CHANNEL DUAL-GATE GaAs FIELD-EFFECT TRANSISTOR . . . depletion m ode dual-gate M E S FET designed for high frequency amplifier
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MRFG9661/D
MRFG9661/9661R
MRFG9661/D
MRF966
MRF9661
HP8970A
HP11590B
mrf9661 motorola
TRANSISTOR 318a
Eaton 2075
TRANSISTOR MPS A72
2f 1001
MRFG9661R
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