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    AO4801A Price and Stock

    Alpha & Omega Semiconductor AO4801A

    MOSFET 2P-CH 30V 5A 8SOIC
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    DigiKey AO4801A Reel 3,000
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    Alpha & Omega Semiconductor AO4801AS

    MOSFET 2P-CH 30V 5A 8SOIC
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    Alpha & Omega Semiconductor AO4801AL

    MOSFET 2P-CH 30V 5A 8SOIC
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    Alpha & Omega Semiconductor AO4801AL_001

    MOSFET 2P-CH 30V 5A 8SOIC
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    Others AO4801AL

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    AO4801A Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AO4801A Alpha & Omega Semiconductor Dual P-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO4801A Alpha & Omega Semiconductor General Purpose - 30V P-Channel MOSFET Original PDF
    AO4801AL Alpha & Omega Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2P-CH 30V 5A 8SOIC Original PDF
    AO4801AL_001 Alpha & Omega Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2P-CH 30V 5A 8SOIC Original PDF

    AO4801A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AO4801AL

    Abstract: 933 SOIC8
    Text: AO4801AL 30V P-Channel MOSFET General Description Product Summary The AO4801AL combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON .This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF AO4801AL AO4801AL 933 SOIC8

    AO4801A

    Abstract: No abstract text available
    Text: AO4801A 30V P-Channel MOSFET General Description Product Summary The AO4801A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON .This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF AO4801A AO4801A

    AO4801A

    Abstract: No abstract text available
    Text: AO4801A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4801A uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4801A is Pb-free


    Original     		PDF AO4801A AO4801A

    AON6704L

    Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
    Text: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower


    Original     		PDF O-252) O-263) MSOP-10 SC70-3 SC70-6 SC-89-3 SC-89-6 OD523 OD923 OT23-3 AON6704L AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025

    Untitled

    Abstract: No abstract text available
    Text: Dual P-channel MOSFET ELM14801AB-N •General description ■Features ELM14801AB-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=-30V Id=-5A (Vgs=-10V) Rds(on) < 48mΩ (Vgs=-10V) Rds(on) < 57mΩ (Vgs=-4.5V)


    Original     		PDF ELM14801AB-N ELM14801AB-N tempLM14801AB-N

    AO4946

    Abstract: AOZ1242 AO4407A AOZ1242AI AO7408 AO3460 AO4936 AOZ1212AI AOD484 ao4466
    Text: ALPHA & OMEGA SEMICONDUCTOR Selector Guide Q2/Q3 2008 www.aosmd.com Technology. Innovation. Powering the Future. TABLE OF CONTENTS Corporate Overview Mosfets Power ICs Transient Voltage Suppressors TVS Package Types www.aosmd.com PAGE 2 PAGE 3 - 18 PAGE 19 - 22


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: デュアルパワー P チャンネル MOSFET ELM14801AB-N •概要 ■特長 ELM14801AB-N は低入力容量 低電圧駆動、 低 ・ Vds=-30V オン抵抗という特性を備えた大電流デュアルパワー ・ Id=-5A Vgs=-10V MOSFET です。


    Original     		PDF ELM14801AB-N

    ELM14801AB

    Abstract: No abstract text available
    Text: 双 P 沟道 MOSFET ELM14801AB-N •概要 ■特点 ELM14801AB-N 是 P 沟道低输入电容低工作电压、 •Vds=-30V 低导通电阻的大电流 MOSFET，内藏有两个 MOSFET。 ·Id=-5A Vgs=-10V ·Rds(on) < 48mΩ (Vgs=-10V) ·Rds(on) < 57mΩ (Vgs=-4.5V)


    Original     		PDF ELM14801AB-N ELM14801AB

    Untitled

    Abstract: No abstract text available
    Text: Dual P-channel MOSFET ELM54801AA-N •General description ■Features ELM54801AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=-30V Id=-5A (Vgs=-10V) Rds(on) < 48mΩ (Vgs=-10V) Rds(on) < 57mΩ (Vgs=-4.5V)


    Original     		PDF ELM54801AA-N ELM54801AA-N M54801AA-N