CAP 8000uf
Abstract: 5v b2 zener diode
Text: VER : B_2 update : 2010.04.30 AC-DC Power Module AOC SERIES 4 Watts KEY FEATURES Switching Power Module for PCB Mountable Fully Encapsulated Plastic Case Universal Input Range 90-264VAC, 47-440 Hz Single and Dual Output Low Ripple and Noise
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90-264VAC,
AOC-12S
AOC-14S
AOC-15S
AOC-24S
500us)
47F/25V
CAP 8000uf
5v b2 zener diode
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PDF
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AOC-12
Abstract: AOC-12S CAP 8000uf aoc resin
Text: VER : A_4 update : 98.07.07 AC-DC Power Module AOC SERIES 4 Watts KEY FEATURES Switching Power Module for PCB Mountable Fully Encapsulated Plastic Case Universal Input Range 90-264VAC, 47-440 Hz Single and Dual Output Low Ripple and Noise Isolation Class II
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Original
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90-264VAC,
AOC-12S
AOC-14S
AOC-15S
AOC-24S
500us)
AOC-12
AOC-12S
CAP 8000uf
aoc resin
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PDF
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Untitled
Abstract: No abstract text available
Text: VER : B_0 update : 98.12.04 AC-DC Power Module AOC SERIES 4 Watts KEY FEATURES Switching Power Module for PCB Mountable Fully Encapsulated Plastic Case Universal Input Range 90-264VAC, 47-440 Hz Single and Dual Output Low Ripple and Noise
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Original
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90-264VAC,
AOC-12S
AOC-14S
AOC-15S
AOC-24S
500us)
F/25V
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PDF
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Untitled
Abstract: No abstract text available
Text: InnovativeInnov Innovative VCSEL Solutions . Delivered Advanced Optical Components Photoreflective Sensor Leadframe packaging Preliminary HVS6003-002 Key Features: VCSEL and phototransistor in industry standard leadframe packaging Optical plastics block visible wavelength for better ambient light rejection
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HVS6003-002
HVS6003-002
1-866-MY-VCSEL
1-866-MY-VCSEL
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PDF
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if6 sensor
Abstract: VCSEL phototransistor HVS6003-002 vcsel spice model 80625 phototransistor spice model VCSEL Reflective Optical Sensor "IR Sensor" with DIP laser based communication
Text: d DATA SHEET PHOTOREFLECTIVE SENSOR LEADFRAME PACKAGE HVS6003-002 FEATURES: VCSEL and phototransistor in industry standard leadframe packaging IEC 80625 Class 1 Laser Product The HVS6003-002 is designed as a higher performance alternative to LED based reflective
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Original
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HVS6003-002
HVS6003-002
1-866-MY-VCSEL
if6 sensor
VCSEL phototransistor
vcsel spice model
80625
phototransistor spice model
VCSEL Reflective Optical Sensor
"IR Sensor" with DIP
laser based communication
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PDF
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Untitled
Abstract: No abstract text available
Text: d DATA SHEET PHOTOREFLECTIVE SENSOR LEADFRAME PACKAGE HVS6003-002 FEATURES: VCSEL and phototransistor in industry standard leadframe packaging IEC 80625 Class 1 Laser Product The HVS6003-002 is designed as a higher performance alternative to LED based reflective sensors. This Vertical Cavity
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Original
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HVS6003-002
HVS6003-002
1-866-MY-VCSEL
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PDF
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if6 sensor
Abstract: HVS6003-002 phototransistor spice model
Text: d DATA SHEET PHOTOREFLECTIVE SENSOR LEADFRAME PACKAGE HVS6003-002 FEATURES: VCSEL and phototransistor in industry standard leadframe packaging IEC 80625 Class 1 Laser Product The HVS6003-002 is designed as a higher performance alternative to LED based reflective
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Original
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HVS6003-002
HVS6003-002
1-866-MY-VCSEL
if6 sensor
phototransistor spice model
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET PHOTOREFLECTIVE SENSOR LEADFRAME PACKAGE HVS6003-002 FEATURES: VCSEL and phototransistor in industry standard leadframe packaging Optical plastics block visible wavelength for better ambient light rejection The HVS6003-002 is designed as a higher performance alternative to LED
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Original
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HVS6003-002
HVS6003-002
1-866-MY-VCSEL
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PDF
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Untitled
Abstract: No abstract text available
Text: d DAT A SH EET PH OT OREFLECT I V E SEN SOR LEADFRAM E PACK AGE H V S6 0 0 3 -0 0 2 FEATURES: ̈ VCSEL and phototransistor in industry standard leadframe packaging ̈ IEC 80625 Class 1 Laser Product The HVS6003-002 is designed as a higher performance alternative to LED based reflective sensors. This Vertical Cavity
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Original
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HVS6003-002
1-866-MY-VCSEL
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PDF
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Untitled
Abstract: No abstract text available
Text: d DATA SHEET PHOTOREFLECTIVE SENSOR LEADFRAME PACKAGE HVS6003-002 FEATURES: VCSEL and phototransistor in industry standard leadframe packaging IEC 80625 Class 1 Laser Product The HVS6003-002 is designed as a higher performance alternative to LED based reflective
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Original
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HVS6003-002
HVS6003-002
1-866-MY-VCSEL
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PDF
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M140 Blue Laser Diode
Abstract: 12 volt electronic ballast for fluorescent light ledinta0350c425 philips xitanium 150W 1-10V XI040C070V056CNJ1 M140 laser diode t5 94v-0 tv philips
Text: Lighting Electronics Atlas A Full Line Catalog of LED Drivers, LED Modules, Ballasts and Lighting Controls 2014-2015 Contents Philips Advance LED Drivers Page 1-1 Philips LED Modules Page 2-1 Philips Advance Electronic Fluorescent Ballasts Page 3-1 Philips Advance Electronic Fluorescent Controllable Ballasts
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F40BX
FT40DL/RS
FT50W/2G11/RS
PL-L50W
F50BX/RS
FT55W/2G11
PL-L55W
F55BX
FT55DL
6-39W
M140 Blue Laser Diode
12 volt electronic ballast for fluorescent light
ledinta0350c425
philips xitanium 150W 1-10V
XI040C070V056CNJ1
M140 laser diode
t5 94v-0 tv philips
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 14262 262,144-Word x 4-Bit Multiport DRAM DESCRIPTION The MSM514262 is a 1-Mbit CMOS multiport DRAM composed o f a 262,144-word by 4-bits dynamic RAM and a 512-words by 4-bits SAM. Its RAM and SAM operate independently and asynchronously.
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OCR Scan
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144-Word
MSM514262
512-words
SQJ28-P-400-1
SQJ32-P-400-1
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PDF
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m514262
Abstract: MSM514262 MSM514262-10 MSM514262-70 MSM514262-80 ZIP28-P-400 M5M51426 MSM51426
Text: O K I Semiconductor MSM5 14262 262,144-Word x 4-Bit Multiport DRAM DESCRIPTION The MSM514262 is a 1-Mbit CMOS m ultiport DRAM com posed of a 262,144-word by 4-bits dynam ic RAM and a 512-words b y 4-bits SAM. Its RAM and SAM operate independently and asynchronously.
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OCR Scan
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MSM514262
144-Word
MSM514262
512-words
SOJ28-P-400-1
50MBB
SOJ32-P-400-1
m514262
MSM514262-10
MSM514262-70
MSM514262-80
ZIP28-P-400
M5M51426
MSM51426
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PDF
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TS280-A89Z
Abstract: No abstract text available
Text: TS280—A89Z December 1989 FUJITSU DATA SHEET • MB82B71-15/-20 64K BIT HIGH SPEED BI-CMOS SRAM 65,536-WORD x 1-BIT Bi-CMOS HIGH SPEED STATIC RANDOM ACCESS MEMORY The Fujitsu MB82B71 is a 65,536 words by 1 bits static random access memory fabricated with a
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OCR Scan
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TS280--
MB82B71-15/-20
536-WORD
MB82B71
300mil
24-LEAD
LCC-24P-M02)
TS280-A89Z
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PDF
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alco MPA
Abstract: tyco lug MARKING CODE 306f MPA306F 106D ALCO MPA106 "Pushbutton Switch" MPA206RPC 3-1437567-4
Text: 5 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED A LL C O P Y R IG H T - BY TYCO E L E C T R O N IC S FO R 4 3 2 P U B L IC A T IO N IN TE R N A TIO N A L RIGHTS LOC D IS T AD 00 R E S E R VE D . C O R P O R A T IO N . RE VIS IO N S LTR D E S C R IP T IO N
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02mar09
15N0V04
23FEB95
alco MPA
tyco lug
MARKING CODE 306f
MPA306F
106D ALCO
MPA106
"Pushbutton Switch"
MPA206RPC 3-1437567-4
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PDF
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CXK584000
Abstract: CXK584000M 100 10L AD CXK584000YM
Text: 54E SONY. J> m &3&E3&3 0DG4ÖS3 071 « S O N Y CXK584000TM/YM/M/P SiiSfeSKiSW 524288-word x 8-bit High Speed CMOS Static RAM SONY CORP/COMPONENT Description CXK584000TM/YM/M/P is a 4,194,304 bits high speed CMOS static RAM organized as 524,288 words by 8-bits. Polysilicon TFT cell technology realized
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OCR Scan
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CXK584000TM/YM/M/P
W85L710L
-55LL/7DLL/85LL/T0LL
524288-word
CXK584000TM/YM/M/P
55ns/110ns
70ns/140ns
85ns/170ns
100ns/
B3B23B3
CXK584000
CXK584000M
100 10L AD
CXK584000YM
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PDF
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MSM541
Abstract: MSM5416258B
Text: OKI Semiconductor Technical Information MSM5416258B 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5416258B is a 262,144-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5416258B achieves high integration,high-speed operation,and low-power
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OCR Scan
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MSM5416258B
144-Word
16-Bit
MSM5416258B
40-pin
MSM541
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PDF
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K242M
Abstract: l75h MSM54V16255A
Text: PRELIMINARY OK! Semiconductor REVISION-2 1996.11.2 M S M 5 4 V 1 6 2 5 5 A / S L ~~ 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM54V162S5A/SL is a 262,144-word x 16-bit dynamic R A M fabricated in OKI's CM O S silicon gate technology. The MSM54V16255A/SL achieves high integration,high-speed operation,and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM54V16255A/SL is
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OCR Scan
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MSM54V16255A/SL
144-Word
16-Blt
MSM54V162S5A/SL
16-bit
MSM54V16255A/SL
40-pin
14/40-pin
K242M
l75h
MSM54V16255A
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PDF
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MSM54V16258
Abstract: msm54v16258a V1625
Text: PRELIMINARY OKI Semiconductor MSM54V16258A/SL REVISION-2 1996.11.2 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM54V16258A/SL is a 262,144-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM54V16258A/SL achieves high integration,high-speed operation,and lowpovver consumption doe to quadruple polysilicon double metal CMOS. The MSM54V16258A/SL is
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OCR Scan
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MSM54V16258A/SL
144-Word
16-Blt
MSM54
VI6258A/SL
16-bit
MSM54V162S8A/SL
MSM54V16258
40-pin
msm54v16258a
V1625
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PDF
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Untitled
Abstract: No abstract text available
Text: 'f c N i- e »« _ Fu' j DATASHEET M B 8 1 1 6 1 0 1 -60/-70/-80 CMOS 16M x 1 Bit Nibble Mode Dynamic RAM The Fujitsu MB8116101 is a fully decoded CMOS Dynamic RAM DRAM that contains a total of 16,777,216 memory cells in a x1 configuration. The MB8116101 features a nibble
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OCR Scan
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MB8116101
four-3211
l37D-E-TE-DS
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PDF
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 4 M x 4 BIT FAST PAGE MODE DYNAMIC RAM MB8116400B-50/-60 CMOS 4,194,304 x 4 Bit Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB8116400B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The MB8116400B features a “fast page” mode of operation whereby high
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OCR Scan
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MB8116400B-50/-60
MB8116400B
MB8116400B
C26059S-3C-1
26-pin
FPT-26P-M05)
F26005S-2C-1
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PDF
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 4 M x 4 BIT FAST PAGE MODE DYNAMIC RAM MB8116400B-50/-60 CMOS 4,194,304 x 4 Bit Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB8116400B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The MB8116400B features a “fast page” mode of operation whereby high
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OCR Scan
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MB8116400B-50/-60
MB8116400B
MB8116400B
26-pin
FPT-26P-M05)
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PDF
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Untitled
Abstract: No abstract text available
Text: MEMORY 4 M X 4 BIT FAST PAGg MOD E DYNAMIC RAM M 7400A-60/-70/-60L/" CMOS 4,194,304 x 4 Bit Fast Page Mode Dynamic RAM DESCRIPTION The Fujitsu MB81V17400A is a fully decoded CMOS Dynamic RAM DRAM t e t contains 16,777,216 memory cells accessible in 4-bit increments. The MB81V17400A features a “fast page” m od^of operation whereby high
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OCR Scan
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400A-60/-70/-60L/"
MB81V17400A
F9708
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PDF
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340OLA
Abstract: No abstract text available
Text: MEMORY 1 M X 16 BIT HYPERPAGEMODEDYNAMICRAM MB81V16165 B-50/-60/-50L/-60 L CMOS 1,048,576 x 16 Bit Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB81V16165B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 16-bit increments. The MB81V16165B features a “hyper page” mode of operation whereby
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OCR Scan
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MB81V16165
B-50/-60/-50L/-60
MB81V16165B
16-bit
MB8118165B
F9712
340OLA
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PDF
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