Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    AOD425 Search Results

    SF Impression Pixel

    AOD425 Price and Stock

    Alpha & Omega Semiconductor AOD425

    MOSFET P-CH 30V 9A/50A TO252
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AOD425 Digi-Reel 1
    • 1 $0.57
    • 10 $0.57
    • 100 $0.57
    • 1000 $0.57
    • 10000 $0.57
    		Buy Now
    AOD425 Cut Tape
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    AOD425 Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    AOD425 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    AOD425 Alpha & Omega Semiconductor General Purpose - AOD425 P-Channel Enhancement Mode Field Effect Transistor Original PDF
    AOD425_001 Alpha & Omega Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH TO252 Original PDF

    AOD425 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AOD425

    Abstract: No abstract text available
    Text: AOD425 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD425 uses advanced trench technology to provide excellent RDS ON and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is


    Original     		PDF AOD425 AOD425 O-252

    Untitled

    Abstract: No abstract text available
    Text: AOD425 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD425 uses advanced trench technology to provide excellent R DS ON and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is


    Original     		PDF AOD425 AOD425 O-252

    Untitled

    Abstract: No abstract text available
    Text: AOD425 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD425 uses advanced trench technology to provide excellent RDS ON and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is


    Original     		PDF AOD425 AOD425 19ABCDEF

    AOD425

    Abstract: No abstract text available
    Text: AOD425 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD425 uses advanced trench technology to provide excellent RDS ON and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is


    Original     		PDF AOD425 AOD425

    aod425

    Abstract: No abstract text available
    Text: AOD425 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD425 uses advanced trench technology to provide excellent RDS ON and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is


    Original     		PDF AOD425 AOD425 O-252

    AOD425

    Abstract: max2255
    Text: AOD425 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD425 uses advanced trench technology to provide excellent RDS ON and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD


    Original     		PDF AOD425 AOD425 O-252 max2255

    AON6704L

    Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
    Text: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower


    Original     		PDF O-252) O-263) MSOP-10 SC70-3 SC70-6 SC-89-3 SC-89-6 OD523 OD923 OT23-3 AON6704L AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025

    SLG8SP587V

    Abstract: SLG8SP587 LA5511P 216-0729042 BCM57780 ALC669X LA-5511P TPS51125 hm55 9LRS3199
    Text: A B C D E 1 1 Compal Confidential 2 2 NCQD0 M/B Schematics Document Intel Arrandale/Clarksfield Processor with DDRIII + Ibex Peak-M 2009-08-10 3 3 REV:1.0 4 4 2009/08/10 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification 2010/08/10


    Original     		PDF A5511 MAX17028 SLG8SP587V SLG8SP587 LA5511P 216-0729042 BCM57780 ALC669X LA-5511P TPS51125 hm55 9LRS3199

    AO4946

    Abstract: AOZ1242 AO4407A AOZ1242AI AO7408 AO3460 AO4936 AOZ1212AI AOD484 ao4466
    Text: ALPHA & OMEGA SEMICONDUCTOR Selector Guide Q2/Q3 2008 www.aosmd.com Technology. Innovation. Powering the Future. TABLE OF CONTENTS Corporate Overview Mosfets Power ICs Transient Voltage Suppressors TVS Package Types www.aosmd.com PAGE 2 PAGE 3 - 18 PAGE 19 - 22


    Original     		PDF

    LA5511P

    Abstract: 216-0774007 BD82PM55 LA-5511P BCM57780 ATI 216-0728014 MX25L3205DM2I ATI M96 tps51125 2160728014
    Text: A B C D E 1 1 Compal Confidential 2 2 NCQD0 M/B Schematics Document Intel Arrandale/Clarksfield Processor with DDRIII + Ibex Peak-M 2009-09-30 3 3 REV:2.0 4 4 2009/09/30 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification 2010/09/30


    Original     		PDF MAX17028 LA-5511P LA5511P 216-0774007 BD82PM55 BCM57780 ATI 216-0728014 MX25L3205DM2I ATI M96 tps51125 2160728014