Untitled
Abstract: No abstract text available
Text: AP10N70R/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description AP10N70 series are specially designed as main switching devices for
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AP10N70R/P
AP10N70
265VAC
O-220
O-262
O-220
10N70R
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AP10N70
Abstract: No abstract text available
Text: AP10N70R/P-A Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Rated Test D ▼ Fast Switching Performance ▼ Simple Drive Requirement 650V RDS ON 0.6Ω ID G ▼ RoHS Compliant BVDSS 10A S
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AP10N70R/P-A
AP10N70
265VAC
O-220
O-262
O-220
100us
100ms
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Untitled
Abstract: No abstract text available
Text: AP10N70W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description AP10N70 series are specially designed as main switching devices for
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AP10N70W
AP10N70
265VAC
100us
100ms
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Untitled
Abstract: No abstract text available
Text: AP10N70R/P-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D BVDSS 650V RDS ON Fast Switching Characteristic Simple Drive Requirement ID G 0.62 10A S Description AP10N70 series are specially designed as main switching devices for
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AP10N70R/P-A
AP10N70
265VAC
O-220
O-262
O-220
100us
100ms
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10N70P
Abstract: No abstract text available
Text: AP10N70R/P-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 650V RDS ON 0.6Ω ID G 10A S Description AP10N70 series are specially designed as main switching devices for
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AP10N70R/P-A
AP10N70
265VAC
O-220
O-262
O-220
10N70P
10N70P
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Untitled
Abstract: No abstract text available
Text: AP10N70W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description AP10N70 series are specially designed as main switching devices for
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AP10N70W
AP10N70
265VAC
10N70W
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Untitled
Abstract: No abstract text available
Text: AP10N70S RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description AP10N70S is specially designed as main switching devices for universal
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AP10N70S
AP10N70S
265VAC
To-263
O-263
100us
100ms
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Untitled
Abstract: No abstract text available
Text: AP10N70W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic Simple Drive Requirement BVDSS 600V RDS ON 0.6 ID G 10A S Description AP10N70 series are specially designed as main switching devices for
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AP10N70W
AP10N70
265VAC
10N70W
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Untitled
Abstract: No abstract text available
Text: AP10N70I-A-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D BVDSS RDS ON Fast Switching Characteristic Simple Drive Requirement ID G RoHS Compliant & Halogen-Free 650V 0.62 10A S Description
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AP10N70I-A-HF
O-220CFM
100us
100ms
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10N70
Abstract: No abstract text available
Text: AP10N70I-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D BVDSS RDS ON Fast Switching Characteristic Simple Drive Requirement ID G 650V 0.62 10A S Description Advanced Power MOSFETs from APEC provide the designer with
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AP10N70I-A
O-220CFM
O-220CFM
10N70I
10N70
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Untitled
Abstract: No abstract text available
Text: AP10N70R/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description AP10N70 series are specially designed as main switching devices for
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Original
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AP10N70R/P
AP10N70
265VAC
O-220
O-262
O-220
100us
100ms
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Untitled
Abstract: No abstract text available
Text: AP10N70R/P-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 650V RDS ON 0.6Ω ID G 10A S Description AP10N70 series are specially designed as main switching devices for
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AP10N70R/P-A
AP10N70
265VAC
O-220
O-262
O-220
100us
100ms
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g10a
Abstract: marking codes transistors SSs
Text: AP10N70S RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description AP10N70S is specially designed as main switching devices for universal
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AP10N70S
AP10N70S
265VAC
O-263
O-263
10N70S
g10a
marking codes transistors SSs
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Untitled
Abstract: No abstract text available
Text: AP10N70R/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic Simple Drive Requirement BVDSS 600V RDS ON 0.6 ID G 10A S Description AP10N70 series are specially designed as main switching devices for
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Original
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AP10N70R/P
AP10N70
265VAC
O-220
O-262
O-220
10N70R
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP10N70W-HF-3 N-channel Enhancement-mode Power MOSFET 100% Avalanche-Tested D Simple Drive Requirement Fast Switching Performance G RoHS-compliant, halogen-free BV DSS 600V R DS ON 0.6Ω ID 10A S Description Advanced Power MOSFETs from APEC provide the designer with the best
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AP10N70W-HF-3
AP10N70W-HF-3
AP10N70
10N70W
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10N70
Abstract: 68A40
Text: AP10N70I-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 650V RDS ON 0.62Ω ID G 10A S Description Advanced Power MOSFETs from APEC provide the designer with
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AP10N70I-A
O-220CFM
O-220CFM
10N70I
10N70
68A40
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Untitled
Abstract: No abstract text available
Text: AP10N70S RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic Simple Drive Requirement BVDSS 600V RDS ON 0.6 ID G 10A S Description AP10N70S is specially designed as main switching devices for universal
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AP10N70S
AP10N70S
265VAC
O-263
O-263
10N70S
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Untitled
Abstract: No abstract text available
Text: AP10N70R/P-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic Simple Drive Requirement BVDSS 650V RDS ON 0.6 ID G 10A S Description AP10N70 series are specially designed as main switching devices for
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Original
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AP10N70R/P-A
AP10N70
265VAC
O-220
O-262
O-220
10N70P
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Untitled
Abstract: No abstract text available
Text: AP10N70I-A-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement 650V RDS ON 0.62Ω ID G ▼ RoHS Compliant & Halogen-Free
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AP10N70I-A-HF
O-220CFM
100us
100ms
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