AP1127

Contextual Info: AP1127 3A Bus Terminator Regulator „ Features „ General Description - Ideal for DDR-I and DDR-II - Source and sink up to 3A, no heat sink required - Integrated power MOSFETs - Programmable output voltage by external resistors - Output voltage could go down to 0.6V

Contextual Info: EEAlpha GaAs 1C GSM Power Amplifier AP112-79 Features • Output Power up to 35 dBm SSOP-16 Slug 0.1968 5.00 mm 0.1 B90 (4.80 mm) 0.025 (0.635 mm) T Y P .- 1 ■ 3.5 V Operation If ÌflflHRR ■ Efficiency Typically 55% ■ High Power SSOP-16 Package with Slug

Contextual Info: ESAlpha GaAs 1C GSM Power Amplifier AP112-79 Features • +3.5 V Operation SSOP-16 Slug 0.1968 5.00 mm 0.1890 (4.80 mm] 0.025 (0.635 mm) T Y P .- ■ Output Power up to 35 dBm mwwwww PIN 16 — ■ Efficiency Typically 55% ■ Outstanding Efficiency vs. Supply Voltage

AP1131

Abstract: 2N1720 2N1718 2n1482 2N2990 2N1479 2N1480 2N1481 2N1486 2N1700
Contextual Info: 0043592 A P I ELECTRON ICS INC 26C 00217 D _ _P A R A M E T E R T A B L E S A P I ELECTRONICS INC ' 2b dY ^ D O M B S T E □□□□217 E, COLLECTOR CURRENT = 1 AMP NPN TYPES Device No Case v CBO Volts 2N1479 2N1480 2N1486

AP112-79

Abstract: ap112 SSOP-16
Contextual Info: GaAs IC GSM Power Amplifier AP112-79 Features SSOP-16 Slug • +3.5 V Operation 0.1968 5.00 mm 0.1890 (4.80 mm) 0.025 (0.635 mm) TYP. ■ Output Power up to 35 dBm PIN 16 ■ Efficiency Typically 55% ■ Outstanding Efficiency vs. Supply Voltage PIN 1 ■ High Power SSOP-16 Package with Slug

AS121-12

Abstract: ass38 AS131-59 SOT-6 1C
Contextual Info: EHA lpha Commercial 1C Products Selection Guide Plastic Packaged Control Products FETs and Switches Frequency GHz 0.7-2.5 Description Insertion Loss Isolation Range Range (dB) Tÿp. (dB)TVp. High Isolation, Dual Pos. CTL IP3 >0.5 GHz (dBm)Typ. Package Part

AP112

Abstract: AP112-79 SSOP-16
Contextual Info: GaAs IC GSM Power Amplifier AP112-79 Features SSOP-16 Slug • +3.5 V Operation 0.1968 5.00 mm 0.1890 (4.80 mm) 0.025 (0.635 mm) TYP. ■ Output Power up to 35 dBm PIN 16 ■ Efficiency Typically 55% ■ Outstanding Efficiency vs. Supply Voltage PIN 1 ■ High Power SSOP-16 Package with Slug

AP1131

Abstract: 2N1479 2N1480 2N1481 2N1486 2N1700 2N2102 AP1125 AP1127 AP1128
Contextual Info: 0043592 A P I ELECTRONICS INC _ _ _ P A R A M E T E R T A B L E S A P I EL ECTRONICS INC 2b 26C 00217 D lT | 0 0 4 3 5 ^ D 7": 3> J - o / □□□0217 L, COLLECTOR CURRENT = 1 AMP NPN TYPES Device No 2N1479 2N1480 2N1486 2N1700

LGA-16

Abstract: LGA16 SOT-6 1C
Contextual Info: Frequency GHz Description GaAsRFICs and Modules • Attenuators Insertion Loss Range (dB) Typ. Attenuation Range (dB) Typ. IP3 > 0.5 GHz (dBm) Typ. Package Part Number ♦ 1 AF002N2-32 1C Voltage Variable Attenuators 3.1 -3 .8 1 5 -7 18 SOT-143 0.5 -2 .5

2N1720

Abstract: 2N1479 2N1480 2N1481 2N1486 2N1700 2N2102 AP1125 AP1127 AP1128
Contextual Info: 0043592 A P I ELECTRONICS INC 26 C _ _P A R A M E T E R T A B L E S A P I ELECTRONICS INC ' 2b 00217 dY ^ D O M B S T E D □□□□217 E, COLLECTOR CURRENT = 1 AMP NPN TYPES Device No Case v CBO Volts 2N1479 2N1480 2N1486

AP112

Abstract: AP112-79 Q1 2N2222 TK112 BM 2N2222 rf 2N2222 AM100-73 tuning capacitors TK112
Contextual Info: AP112-79 GSM Test Kit TK112 AP112-79 Dual-Bias Bias Instruction Note 1. Connect DC ground to ground posts located at either upper right or upper left of test fixture. STEP 4 STEP 3 STEP 5 VGG2 VDD1 STEP 1 VDD2 C10 C11 C12 2. Connect stage 1 gate bias voltage, VGG1 VGS1 , to wire

AP112

Abstract: AP112-79 SSOP-16
Contextual Info: ESAlpha GaAs 1C GSM Power Amplifier A P 1 12-79 SSOP-16 Slug Features • +3.5 V Operation 0 .1968 5.00 mm ■ 0.1890 (4.80 mm] 0.025 (0.635 mm) TY P . - ■ Output Power up to 35 dBm mwwwww PIN 16 — ■ Efficiency Typically 55% ■ Outstanding Efficiency vs. Supply Voltage