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Text: Advanced Power Electronics Corp. AP1R803GMT-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D SO-8 Compatible with Heatsink Low On-resistance G BV DSS 30V R DS ON 1.9mΩ ID RoHS-compliant, halogen-free 170A S D Description D D D Advanced Power MOSFETs from APEC provide the designer with
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Untitled
Abstract: No abstract text available
Text: AP1R803GMT-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ SO-8 Compatible with Heatsink ▼ Low On-resistance 30V RDS ON 1.9mΩ ID G ▼ RoHS Compliant BVDSS 170A S D Description
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AP1R803GMT-HF
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100ms
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Untitled
Abstract: No abstract text available
Text: AP1R803GMT-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D BVDSS 30V RDS ON SO-8 Compatible with Heatsink Low On-resistance ID G RoHS Compliant 1.9m 170A S D Description D D D Advanced Power MOSFETs from APEC provide the
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AP1R803GMT-HF
100us
100ms
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