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Abstract: No abstract text available
Text: AP20GT60SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C High Speed Switching Low Saturation Voltage VCE sat ,Typ.=1.8V@IC=20A Built-in Fast Recovery Diode VCES 600V IC 20A C C G E E Absolute Maximum Ratings
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AP20GT60SW
-55tor-Emitter
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Untitled
Abstract: No abstract text available
Text: AP20GT60SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C ▼ High Speed Switching ▼ Low Saturation Voltage VCE sat ,Typ.=1.8V@IC=20A ▼ Built-in Fast Recovery Diode VCES 600V IC 20A C G C
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AP20GT60SW
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20GT60sw
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP20GT60SW-HF-3 N-Channel Insulated Gate Bipolar Power Transistor High Speed Switching Low Saturation Voltage Typical V CE sat = 1.8V at IC=20A VCES 600V IC 20A C (tab) G Built-in Fast Recovery Diode C C RoHS-compliant, halogen-free
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AP20GT60SW-HF-3
AP20GT60S
20GT60SW
20GT60sw
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Abstract: No abstract text available
Text: AP20GT60SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C ▼ High Speed Switching ▼ Low Saturation Voltage V CE sat ,Typ.=1.8V@IC=20A ▼ Built-in Fast Recovery Diode VCES 600V IC 20A C G C
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AP20GT60SW
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