AP30G120S Search Results
AP30G120S Datasheets (2)
Part |
ECAD Model |
Manufacturer |
Description |
Datasheet Type |
PDF |
PDF Size |
Page count |
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AP30G120SW | Advanced Power Electronics | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD | Original | 95.49KB | 3 | ||
AP30G120SW | Alpha & Omega Semiconductor | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD | Original | 98.24KB | 3 |
AP30G120S Datasheets Context Search
Catalog Datasheet |
Type |
Document Tags |
PDF |
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Contextual Info: AP30G120SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features ▼ High Speed Switching VCES ▼ Low Saturation Voltage V CE sat =3.0V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Complian IC |
Original |
AP30G120SW Fig11. | |
Contextual Info: Advanced Power Electronics Corp. AP30G120SW-HF-3 N-Channel Insulated Gate Bipolar Power Transistor High Speed Switching V CES 1200V Low Saturation Voltage C tab 30A IC Typical VCE(sat)= 3.0V at IC=30A G Internal "Co-Pak" Fast Recovery Diode C C RoHS-compliant, halogen-free TO-3P package |
Original |
AP30G120SW-HF-3 AP30G120S 30G120SW | |
AP30G120SW
Abstract: AP30G120 ictc 500V N-Channel IGBT TO-3P
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Original |
AP30G120SW Fig11. AP30G120SW AP30G120 ictc 500V N-Channel IGBT TO-3P | |
Contextual Info: AP30G120SW Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features High speed switching VCES Low Saturation Voltage VCE sat =3.0V@IC=30A IC 1200V 30A C CO-PAK, IGBT with FRD RoHS Compliant G C |
Original |
AP30G120SW Fig11. |