AP9922GEO
Abstract: No abstract text available
Text: AP9922GEO RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low on-resistance G2 S2 D2 ▼ Capable of 1.8V gate drive ▼ Optimal DC/DC battery application S2 S1 TSSOP-8 G1 S1 BVDSS 20V RDS ON 16mΩ ID D1
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AP9922GEO
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Abstract: No abstract text available
Text: AP9922GEO-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low on-resistance BVDSS G2 S2 D2 Capable of 1.8V Gate Drive S2 RDS ON G1 S1 Optimal DC/DC Battery Application TSSOP-8 20V 16m ID S1 D1 6.4A RoHS Compliant & Halogen-Free
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AP9922GEO-HF
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Untitled
Abstract: No abstract text available
Text: AP9922GEO-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low on-resistance G2 S2 D2 ▼ Capable of 1.8V Gate Drive S2 G1 S1 ▼ Optimal DC/DC Battery Application TSSOP-8 BVDSS 20V RDS ON 16mΩ ID S1 D1
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AP9922GEO-HF
100ms
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP9922GEO-HF-3 Dual N-channel Enhancement-mode Power MOSFET Independent, Symmetrical Dual MOSFETs Supports 1.8V Gate Drive D1 Low On-resistance G1 D2 BV DSS 20V R DS ON G2 16mΩ ID RoHS-compliant, halogen-free S1 6.4A S2
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AP9922GEO-HF-3
AP9922
9922GEO
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AP9922GEO
Abstract: No abstract text available
Text: AP9922GEO RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low on-resistance G2 S2 D2 ▼ Capable of 1.8V Gate Drive S2 G1 S1 ▼ Optimal DC/DC Battery Application TSSOP-8 BVDSS 20V RDS ON 16mΩ ID S1 D1
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AP9922GEO
100ms
AP9922GEO
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