MA8170
Abstract: No abstract text available
Text: », ^ AP9A128 AP9A129 Sïptos • semiconductor 32K x 8 High Speed CMOS Static RAM Features • • • • • • • Fast access times: 8, 10, 12, 15, 20 ns F ast output enable 1Dq e f° r cache applications Low active pow er -400 m W (Typical) Low standby power
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AP9A128
AP9A129
AP9A129,
MA8170
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AP9A128-15VC
Abstract: ap9a128 AP9A128-12VC L0812
Text: A P 9A 128 K p to s A P 9A 129 • SEMICONDUCTOR 32K x 8 High Speed CMOS Static RAM Features This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12ns Max . • • • • • • • Fast access times: 12, 15, 20 ns
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AP9A128/9
768-word
AP9A128
AP9A129
28-Pin
300-Mil)
32-Pin
400-Mil)
44-Pin
AP9A128-15VC
ap9a128
AP9A128-12VC
L0812
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AP9A128
Abstract: AP9A128-12VC AP9A128-20VC AP9A128-15VC AP9A128-20TC DS00007
Text: Revision: October 9, 1997 Kptos A P 9 A 1 2 8 _ A P 9 A 1 2 9 • s e m ic o n d u c t o r 32K x 8 High Speed CMOS Static RAM Features • • • • • • • Fast access times: 12, 15, 20 ns Fast output enable t^oE f°r cache applications
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