Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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JDSU ERM
Abstract: jdsu apd avalanche photodiode jdsu ingaas apd photodetector photodetector apd dwdm APD 1550 nm photodetector
Text: Product Bulletin 10 Gb/s Avalanche Photodiode APD High Dynamic Range (HDR) Receiver ERM 528 HDR The JDS Uniphase 10 Gb/s Avalanche Photodiode (APD) High Dynamic Range (HDR) Receiver is a 10 Gb/s APD optical receiver consisting of an APD photodiode, a GaAsHBT TIA, and a
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avalanche photodiode receiver
Abstract: JDSU ERM InGaAs apd photodiode ingaas apd photodetector avalanche photodiode ghz InGaAs APD, 10 Gb/s, -30 dBm 877-550-JDSU transimpedance amplifier 7.5 GHz 10 gb APD receiver APD 1550 nm photodetector
Text: Product Bulletin ERM 598 10 Gb/s Automatic Gain Control AGC APD Receiver Module The ERM 598 is a 10 Gb/s avalanche photodiode receiver with automatic gain control (AGC) for long-haul SONET/SDH OC-192/STM-64 DWDM applications. The receiver module integrates a low capacitance, low dark current
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OC-192/STM-64
avalanche photodiode receiver
JDSU ERM
InGaAs apd photodiode
ingaas apd photodetector
avalanche photodiode ghz
InGaAs APD, 10 Gb/s, -30 dBm
877-550-JDSU
transimpedance amplifier 7.5 GHz
10 gb APD receiver
APD 1550 nm photodetector
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APD 1300 2,5 GHz
Abstract: JDSU avalanche photodiode ingaas ghz JDSU ERM ingaas apd photodetector apd gain control InGaAs 1550 photodiode transimpedance amplifier jdsu avalanche photodiode avalanche photodiode jdsu photodetector apd dwdm
Text: Product Bulletin 10 Gb/s Automatic Gain Control AGC APD Receiver Module ERM 598 The ERM 598 is a 10 Gb/s avalanche photodiode receiver with automatic gain control (AGC) for long-haul SONET/SDH OC-192/STM-64 DWDM applications. The receiver module integrates a low capacitance, low dark current
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OC-192/STM-64
APD 1300 2,5 GHz
JDSU avalanche photodiode ingaas ghz
JDSU ERM
ingaas apd photodetector
apd gain control
InGaAs 1550 photodiode transimpedance amplifier
jdsu avalanche photodiode
avalanche photodiode jdsu
photodetector apd dwdm
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superlattice avalanche
Abstract: NR3470MU-CC NR4270MU-CC NR4500BP-CC NR4500CP-CC NR7500 STM-16 STM-64 10 gb PIN receiver 10 gb APD receiver
Text: DATA SHEET RECEIVER NR4270MU-CC SUPERLATTICE APD RECEIVER WITH SINGLE MODE FIBER INTERNAL PREAMPLIFIER FOR 10 Gb/s APPLICATIONS DESCRIPTION The NR4270MU-CC is a 10 Gb/s superlattice avalanche photo diode APD receiver in a 17-pin mini-butterfly package with an internal preamplifier.
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NR4270MU-CC
NR4270MU-CC
17-pin
OC-192
STM-64,
OC-192)
superlattice avalanche
NR3470MU-CC
NR4500BP-CC
NR4500CP-CC
NR7500
STM-16
STM-64
10 gb PIN receiver
10 gb APD receiver
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2SC869
Abstract: No abstract text available
Text: MITSUBISHI SILICON AVALANCHE PHOTODIODES blE D • lflITS PD1XX5 SERIES ^ 4 ^ 0 2 ^ DDIMTGT 535 MITSUBISHI DISCRETE SC FOR OPTICAL COMMUNICATION AND RADAR SYSTEMS TYPE NAME FEATURES DESCRIPTION • High speed response (pulse rise tim e 750ps) PD1XX5 is a silicon avalanche photodiode (Si-APD)
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750ps)
400MHz)
2SC869
2SC869
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Lucent apd
Abstract: APD power supply LG1628AXA LG1600 OP11 OP21 STM-16 transimpedance amplifier 7.5 GHz lucent technologies W series op2a
Text: Preliminary Data Sheet January 1998 LG1628AXA SONET/SDH 2.488 Gbits/s Transimpedance Amplifier Features • High data rate: 2.5 Gbits/s ■ High gain: 5.8 kΩ transimpedance ■ Complementary 50 Ω outputs ■ Low noise ■ Ultrawide dynamic range ■ Single –5.2 V ECL power supply
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LG1628AXA
LG1605
LG1600
LG1628AXA
DS97-156FCE
Lucent apd
APD power supply
OP11
OP21
STM-16
transimpedance amplifier 7.5 GHz
lucent technologies W series
op2a
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InGaAs apd photodiode
Abstract: MAR 609 InGaas PIN photodiode, 1550 NEP InGaAs APD photodiode 1550 Tomography VBD1 photodiode 1550 NEP photodiode InGaAs NEP backside illuminated ingaas photodiode LIDAR
Text: SU200-01A-TO SU200-01A-SM Large Area InGaAs APDs The largest commercially available InGaAs APD, the SU200-01A is ideal for 1.25 Gbps free space optical communications laser range-finding applications, OTDR and high resolution Optical Coherence Tomography.
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SU200-01A-TO
SU200-01A-SM
SU200-01A
03-Mar-05
InGaAs apd photodiode
MAR 609
InGaas PIN photodiode, 1550 NEP
InGaAs APD photodiode 1550
Tomography
VBD1
photodiode 1550 NEP
photodiode InGaAs NEP
backside illuminated ingaas photodiode
LIDAR
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SILICON AVALANCHE PHOTODIODES blE ]> • PD1XX2 SERIES bSHRflST 0014705 TiT » M I T S MITSUBISHI DISCRETE SC FOR OPTICAL COMMUNICATION AND RADAR SYSTEMS TYPE NAME DESCRIPTION FEATURES PD1XX2 is a silicon avalanche photodiode (Si-APD) • High speed response (pulse rise tim e 150ps)
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150ps)
800GHz)
AD1000)
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10G APD chip
Abstract: Photodiode apd amplifier 500 watts amplifier schematic diagram PSS-AD500-1 10G APD photodiode Avalanche photodiode APD photodiode Avalanche photodiode APD FOR POWER avalanche photodiode receiver AD500 PSS-AD500
Text: Pacific Silicon Sensor Inc. Data Sheet PSS-AD500-1.3G-TO5 OPTICAL DATA RECEIVER USING AN AVALANCHE PHOTODIODE AND A 1.3 GHz AMPLIFIER PSS-AD500-1.3G-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a
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PSS-AD500-1
10G APD chip
Photodiode apd amplifier
500 watts amplifier schematic diagram
10G APD
photodiode Avalanche photodiode APD
photodiode Avalanche photodiode APD FOR POWER
avalanche photodiode receiver
AD500
PSS-AD500
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10G APD chip
Abstract: PSS-AD230 Photodiode apd amplifier apd model 10G APD photodiode Avalanche photodiode avalanche photodiode receiver AD230-2.3G-TO5 apd 850 nm 130 ps PSS-AD230-2
Text: Pacific Silicon Sensor Inc. Data Sheet PSS-AD230-2.3G-TO5 OPTICAL DATA RECEIVER USING AN AVALANCHE PHOTODIODE AND A 2.3 GHz AMPLIFIER PSS-AD230-2.3G-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a
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PSS-AD230-2
10G APD chip
PSS-AD230
Photodiode apd amplifier
apd model
10G APD
photodiode Avalanche photodiode
avalanche photodiode receiver
AD230-2.3G-TO5
apd 850 nm 130 ps
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G8931-20
Abstract: low dark current APD SE-171 G893 hamamatsu low dark current APD KAPDB0120EA hamamatsu ingaas APD
Text: PHOTODIODE InGaAs APD G8931-20 Large active area: φ0.2 mm, high-speed response: 0.9 GHz G8931-20 is a large area InGaAs APD designed for distance measurement, spatial light transmission and low-light-level detection, etc. Despite its large active area of φ0.2 mm, G8931-20 provides high-speed response typical cut-off frequency 0.9 GHz at M=10 .
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G8931-20
G8931-20
SE-171
KAPD1019E03
low dark current APD
G893
hamamatsu low dark current APD
KAPDB0120EA
hamamatsu ingaas APD
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs APD G8931-20 Large active area: φ0.2 mm, high-speed response: 0.9 GHz G8931-20 is a large area InGaAs APD designed for distance measurement, spatial light transmission and low-light-level detection, etc. Despite its large active area of φ0.2 mm, G8931-20 provides high-speed response typical cut-off frequency 0.9 GHz at M=10 .
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G8931-20
G8931-20
125hone:
SE-171
KAPD1019E01
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10G APD chip
Abstract: westlake capacitors 10G APD photodiode Avalanche photodiode Photodiode apd amplifier avalanche photodiode bias rise time avalanche photodiode avalanche photodiode photodiode Avalanche photodiode APD 500 watts amplifier schematic diagram
Text: DATA SHEET PSS-AD500-2.3G-TO5 OPTICAL DATA RECEIVER USING AN AVALANCHE PHOTODIODE AND A 2.3 GHz AMPLIFIER PSS-AD-500-2.3G-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO5
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PSS-AD500-2
PSS-AD-500-2
10G APD chip
westlake capacitors
10G APD
photodiode Avalanche photodiode
Photodiode apd amplifier
avalanche photodiode bias
rise time avalanche photodiode
avalanche photodiode
photodiode Avalanche photodiode APD
500 watts amplifier schematic diagram
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G8931-20
Abstract: LH0032 SE-171 low dark current APD APD OTDR
Text: PHOTODIODE InGaAs APD G8931-20 Large active area: φ0.2 mm, high-speed response: 0.9 GHz G8931-20 is a large area InGaAs APD designed for distance measurement, spatial light transmission and low-light-level detection, etc. Despite its large active area of φ0.2 mm, G8931-20 provides high-speed response typical cut-off frequency 0.9 GHz at M=10 .
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G8931-20
G8931-20
SE-171
KAPD1019E02
LH0032
low dark current APD
APD OTDR
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GR-468-CORE
Abstract: agere photodiode 1550 nm APD optical receivers apd 1550, sensitivity 30 dBm
Text: Advance Data Sheet August 2002 P173A OC-48/STM-16 MiniDIL APD Receiver with Improved Sensitivity –34 dBm Features • ■ ■ ■ ■ ■ Low-profile, 8-lead mini-DIL or gull-wing style package: — Suitable for SONET/SDH applications Metal package: — Offers superior shielding for high noise
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P173A
OC-48/STM-16
GR-468-CORE
OC-48
STM-16,
DS01-331METR-1
DS01-331METR)
agere photodiode
1550 nm APD optical receivers
apd 1550, sensitivity 30 dBm
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Untitled
Abstract: No abstract text available
Text: DATA SHEET APD Series: Hermetic Ceramic Packaged Silicon PIN Diode Devices Applications • Switches Attenuators Features Established PIN diode process Low capacitance designs Voltage ratings to 200 V Tight control of I layer base width
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APD0505
APD1520
203250B
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Ge APD
Abstract: LUCENT InGaAs Lucent receiver APD reverse bias LUCENT APD Reliability Factor 127B 127C TR-NWT-000468 APD reverse bias stability Lucent apd
Text: Data Sheet September 1998 127A/B/C InGaAs Avalanche Photodetectors Features • High performance at both 1.3 µm and 1.5 µm. ■ Suitable for use in harsh environments. ■ Higher sensitivity and longer wavelength response than germanium APDs. ■ Permanently locked fiber alignment and high coupling stability.
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27A/B/C
127B/C)
DS98-426LWP
DS95-103LWP)
Ge APD
LUCENT InGaAs
Lucent receiver
APD reverse bias
LUCENT APD Reliability Factor
127B
127C
TR-NWT-000468
APD reverse bias stability
Lucent apd
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GR-468-CORE
Abstract: 1550 nm APD optical receivers Photodiode apd high sensitivity EIA-625 P172 STM-16 10 gb laser diode 10 gb APD receiver
Text: Advance Data Sheet July 2003 P173A OC-48/STM-16 MiniDIL APD Receiver with Improved Sensitivity –34 dBm Features • Low-profile, 8-lead mini-DIL or gull-wing style package: — Suitable for SONET/SDH applications ■ Metal package: — Offers superior shielding for high noise
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P173A
OC-48/STM-16
GR-468-CORE
DS01-331-1
GR-468-CORE
1550 nm APD optical receivers
Photodiode apd high sensitivity
EIA-625
P172
STM-16
10 gb laser diode
10 gb APD receiver
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Untitled
Abstract: No abstract text available
Text: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches Attenuators Features Established Skyworks PIN diode process Low capacitance designs to 0.05 pF Voltage ratings to 200 V Chip size < 15 mils square
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SQ04-0074.
200075Q
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Untitled
Abstract: No abstract text available
Text: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches Attenuators Features Established Skyworks PIN diode process Low capacitance designs to 0.05 pF Voltage ratings to 200 V Chip size < 15 mils square
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SQ04-0074.
200075P
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InGaAs APD Pre-Amplifier
Abstract: InGaAs APD Pre-Amplifier 14 pin 1922 DMO Module Photodiode alcatel apd InGaAs apd photodiode of g.653 avalanche photodiode oc48 1550 fiber 2.5 apd photodetector alcatel APD, applications, bias supply thermistor supply 9V
Text: Alcatel 1922 DM0 2.5 Gbit/s Receiver Module InGaAs APD Pre-Amplifier Description Designed to provide high optical performance for ITU-T G.652 standard optical fiber and ITU-T G.653 shifted dispersion fiber. The Alcatel 1922 DMO consists of a gold-plated, 14-pin, hermetic package,
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14-pin,
VMON/11KW
F-91625
InGaAs APD Pre-Amplifier
InGaAs APD Pre-Amplifier 14 pin
1922 DMO Module
Photodiode alcatel apd
InGaAs apd photodiode
of g.653
avalanche photodiode oc48 1550 fiber 2.5
apd photodetector alcatel
APD, applications, bias supply
thermistor supply 9V
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Untitled
Abstract: No abstract text available
Text: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches Attenuators Features Established Skyworks PIN diode process Low capacitance designs to 0.05 pF Voltage ratings to 200 V Chip size < 15 mils square
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SQ04-0074.
200075O
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Untitled
Abstract: No abstract text available
Text: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches Attenuators Features Established Skyworks PIN diode process Low capacitance designs to 0.05 pF Voltage ratings to 200 V Chip size < 15 mils square
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SQ04-0074.
200075N
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