APD 400- 700 NM Search Results

APD 400- 700 NM Result Highlights (5)

Part	Manufacturer	Description
NR8360JP-BC-AZ	Renesas Electronics Corporation	φ 30 μm InGaAs Avalanche Photo Diode 14-PIN DIP Module With TEC
NR8800FS-CB-AZ	Renesas Electronics Corporation	φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications
NR8300FP-CC-AZ	Renesas Electronics Corporation	1000 to 1600 nm Optical Fiber Communications φ 30 µm InGaAs Avalanche Photo Diode Module
NR8800FS-CB-AZ/SH	Renesas Electronics Corporation	φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications
NR4211TH-AZ	Renesas Electronics Corporation	Receiver Limiting Tia, With Dca Function) Inalas Apd Receiver With Internal Pre-Amplifier For 10 Gb/S Applications

APD 400- 700 NM Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
PerkinElmer Avalanche Photodiode Abstract: No abstract text available Text: Features and Benefits Introduction The short wavelength enhanced silicon avalanche photodiode APD by PerkinElmer (Model C30739ECERH) is designed for low light level applications covering the spectral range from less than 400 nm to greater than 700 nm. Benefits	Original	C30739ECERH) DTS0108P PerkinElmer Avalanche Photodiode	PDF
Untitled Abstract: No abstract text available Text: DATASHEET Photon Detection C30739ECERH Series Short Wavelength Enhanced Silicon Avalanche Photodiode Key Features The C30739ECERH large area silicon avalanche photodiode APD is intended for use in a wide variety of broadband low light level applications covering the spectral range from below 400 to over 700 nm.	Original	C30739ECERH	PDF
Si apd photodiode Abstract: parameter vk 45 Si apd photodiode 700 nm 2SC3138Y apd 400- 700 nm 2SC3138-Y S8328 420nm quadrant avalanche photodiode Photodiode apd high sensitivity Text: US Patent Pending APD Si APD S8328 Quadrant APD with high bluish-violet sensitivity S8328 is a quadrant APD Avalanche Photodiode having a gain of 2-100. The peak gain lies at 420 nm and creates a high sensitivity for blue to violet minor signals. An on-chip bias control circuit gives the most stable output from low to high temperature.	Original	S8328 S8328 SE-171 KAPD1006E01 Si apd photodiode parameter vk 45 Si apd photodiode 700 nm 2SC3138Y apd 400- 700 nm 2SC3138-Y 420nm quadrant avalanche photodiode Photodiode apd high sensitivity	PDF
Untitled Abstract: No abstract text available Text: Si APD S12023シリーズなど低バイアス動作タイプ800 nm帯用APD 800 nm帯の近赤外域用のSi APDで、200 V以下の低電圧で動作が可能です。空間光伝送・光波距離計などの用途に適しています。特長用途	Original	S12023ã S12023-02 S12023-05 S12051 S12086 S12023-10 S12023-10A S3884 S2384 S2385	PDF
Untitled Abstract: No abstract text available Text: Si APD S6045/S12060シリーズ低温度係数タイプ800 nm帯用APD 800 nm帯の近赤外域用のSi APDです。動作電圧の温度係数が低く設計されており、広い温度範囲で安定した動作が可能です。光波距離計・空間光伝送などの用途に適しています。	Original	S6045/S12060ã S12060-02 S12060-05 S12060-10 S6045-04 S6045-05 S6045-06 KAPDA0012JC KAPDA0139JA S6045-01	PDF
SAT800X Abstract: SAT3000 SAT3000x TO-37 avalanche Photodiode 300 nm . LIDAR photodiode SAT3000 Text: Silicon Avalanche Photodiode SAT-Series DESCRIPTION The SAT-Series is based on a “reach-through” structure for excellent quantum efficiency, high speed and targeted for the 1060 nm detection region. The chip is hermetically sealed in a modified TO-8 / TO-5	Original	sat3000x SAT800X SAT3000 TO-37 avalanche Photodiode 300 nm . LIDAR photodiode SAT3000	PDF
Untitled Abstract: No abstract text available Text: Si APD S6045/S12060 series Low temperature coefficient type APD for 800 nm band The S6045 and S12060 series are near infrared Si APDs developed for use in the 800 nm wavelength band. These APDs are designed so that the temperature coefficient of the operating voltage is low enough to ensure stable operation over a wide	Original	S6045/S12060 S6045 S12060 S12060-02 S12060-05 S12060-10 S6045-04 KAPD1005E06	PDF
Untitled Abstract: No abstract text available Text: Si APD S6045/S12060 series Low temperature coefficient type APD for 800 nm band The S6045 and S12060 series are near infrared Si APDs developed for use in the 800 nm wavelength band. These APDs are designed so that the temperature coefficient of the operating voltage is low enough to ensure stable operation over a wide	Original	S6045/S12060 S6045 S12060 S12060-02 S12060-05 S12060-10 S6045-04 KAPD1005E06	PDF
Untitled Abstract: No abstract text available Text: Si APD S12023 series, etc. Low bias operation, for 800 nm band These are 800 nm band near-infrared Si APDs that can operate at low voltages, 200 V or less. They are suitable for applications such as FSO free space optics and optical rangefinders. Features	Original	S12023 S12023-02 S12023-05 S12051 S12086 S12023-10 S12023-10A S3884 S2384 S2385	PDF
Untitled Abstract: No abstract text available Text: Si APD S12023 series, etc. Low bias operation, for 800 nm band These are 800 nm band near-infrared Si APDs that can operate at low voltages, 200 V or less. They are suitable for applications such as FSO free space optics and optical rangefinders. Features	Original	S12023 S12023-02 S12023-05 S12051 S12086 S12023-10 S12023-10A S3884 S2384 S2385	PDF
avalanche photodiode bias and high voltage Abstract: SAE500VS SAE500VX photodiode responsivity 1.1 avalanche photodiode bias Text: Silicon Avalanche Photodiode SAE-Series Red-Enhanced DESCRIPTION The SAE500VS epitaxial avalanche photodiode is a general purpose APD with high responsivity and extremely fast rise and fall times through out the 400 to 1000 nm wavelength range. The peak	Original	SAE500VS SAE500VX avalanche photodiode bias and high voltage SAE500VX photodiode responsivity 1.1 avalanche photodiode bias	PDF
avalanche photodiode bias Abstract: sae500vs Text: Silicon Avalanche Photodiode SAE-Series Red-Enhanced DESCRIPTION The SAE500VS epitaxial avalanche photodiode is a general purpose APD with high responsivity and extremely fast rise and fall times through out the 400 to 1000 nm wavelength range. The peak responsivity	Original	SAE500VS SAE500VX avalanche photodiode bias	PDF
C30902EH Abstract: C30902SH-DTC PerkinElmer Avalanche Photodiode geiger apd avalanche photodiodes geiger C30902 APD, laser, range, finder avalanche photodiode ghz C30921EH Text: High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview PerkinElmer’s C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as	Original	C30902EH C30921EH DTS0408 C30902SH-DTC PerkinElmer Avalanche Photodiode geiger apd avalanche photodiodes geiger C30902 APD, laser, range, finder avalanche photodiode ghz	PDF
C30902SH-DTC Abstract: C30902EH PerkinElmer Avalanche Photodiode APD, laser, range, finder C30902 geiger apd C30902SH PerkinElmer mode a C3092SH-TC PerkinElmer trigger mode Text: Introduction PerkinElmer Type C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths. The responsivity of the	Original	C30902EH C30921EH C30902SH-DTC PerkinElmer Avalanche Photodiode APD, laser, range, finder C30902 geiger apd C30902SH PerkinElmer mode a C3092SH-TC PerkinElmer trigger mode	PDF

AD-LA-16-9-DIL 18 Abstract: APD Array apd 400- 700 nm AD-LA-16-9-DIL Text: preliminary AD-LA-16-9-DIL 18 16 Element Avalanche Photodiode Array Special characteristics: quantum efficiency >80% at λ 760 to 910 nm high speed, low noise good uniformity between elements low slope multiplication curve SSO-AD-series Spectral Responsivity at M=1	Original	AD-LA-16-9-DIL AD-LA-16-9-DIL 18 APD Array apd 400- 700 nm	PDF
ABC550-04 Abstract: SAR1500H4 Text: H2 / H3 / H4 / H5 Series Silicon and InGaAs-APD Receiver DESCRIPTION The H2/H3/H4/H5-Series includes a Silicon or InGaAs Avalanche Photodiode with an optimized low noise hybrid preamplifier for the use in high speed, low light detection, in laser range finding, LIDAR, medical and	Original	SAR500, SAR1500 SAT800, IAE200 ABC550-04 SAR1500H4	PDF
Untitled Abstract: No abstract text available Text: Selection guide - March 2014 Si APD Avalanche Photodiode High-speed, high sensitivity photodiodes having an internal gain mechanism HAMAMATSU PHOTONICS K.K. S i A v a l a n c h e P h o t o d i o d e Si APD High-speed, high sensitivity photodiodes having an internal gain	Original	D-82211 KAPD0001E05	PDF
nir source Abstract: apd 400- 700 nm Text: SSO-AD-500 NIR-TO52-S1 Avalanche Photodiode NIR Special characteristics: quantum efficiency >80% at ! 760-910 nm high speed, low noise 500 µm diameter active area low slope multiplication curve Parameters: Package TO52 S1 : 2 active area 1) 0,196 mm ∅ 500 µm	Original	SSO-AD-500 NIR-TO52-S1 nir source apd 400- 700 nm	PDF
nir source Abstract: No abstract text available Text: SSO-AD-230 NIR-TO52-S1 Avalanche Photodiode NIR Special characteristics: quantum efficiency >80% at ? 760-910 nm high speed, low noise 230 µm diameter active area low slope multiplication curve Package TO52 S1 : Parameters: active area dark current 1) (M=100)	Original	SSO-AD-230 NIR-TO52-S1 nir source	PDF
UBR10000 Abstract: nir source Text: SSO-AD-230 NIR-TO52 Avalanche Photodiode NIR Special characteristics: quantum efficiency >80% at ! 760-910 nm high speed, low noise 230 µm diameter active area low slope multiplication curve Parameters: Package 2 TO52 : 2 active area 1) 0,042 mm ∅ 230 µm	Original	SSO-AD-230 NIR-TO52 905nm 655nm UBR10000 nir source	PDF
apd 400- 700 nm Abstract: No abstract text available Text: SSO-AD-500 NIR-TO52 Avalanche Photodiode NIR Special characteristics: quantum efficiency >80% at ! 760-910 nm high speed, low noise 500 µm diameter active area low slope multiplication curve Parameters: Package 2 TO52 : 2 Active area 1) 0,196 mm ∅ 500 µm	Original	SSO-AD-500 NIR-TO52 apd 400- 700 nm	PDF
S12926 Abstract: S12926-05 Text: セレクションガイド 2015.1 Si APD アバランシェ・フォトダイオード内部増倍機能をもった高速・高感度のフォトダイオード Si AVALANCHE PHOTODIODES S i P h o t o d i o d e Si APD (アバランシェ・フォトダイオード)	Original		PDF
ABC550-04 Abstract: No abstract text available Text: H2 / H3 / H4 / H5 Series Silicon and InGaAs-APD Receiver DESCRIPTION The H2/H3/H4/H5-Series includes a Silicon or InGaAs Avalanche Photodiode with an optimized low noise hybrid preamplifier for the use in high speed, low light detection, in laser range finding, LIDAR, medical and	Original	SAR500, SAR1500 SAT800, IAE200 ABC550-04	PDF
NDL5516PC Abstract: No abstract text available Text: DATA SHEET PHOTO DIODE NDL5516P 080 ¿¿in InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC DESCRIPTION The NDL5516P is an InGaAs avalanche photodiode module with multimode fiber and Internal thermoelectric cooler. It covers the wavelength range between 1 000 and 1 600 nm with high efficiency.	OCR Scan	NDL5516P 14-PIN NDL5516P NDL5590P NDL5561P1 NDL5421P1 NDL5561P2 NDL5421P2 NDL5531P NDL5516PC	PDF

APD 400- 700 NM Search Results

APD 400- 700 NM Result Highlights (5)

APD 400- 700 NM Datasheets Context Search

PerkinElmer Avalanche Photodiode

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Si apd photodiode

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SAT800X

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avalanche photodiode bias and high voltage

avalanche photodiode bias

C30902EH

C30902SH-DTC

AD-LA-16-9-DIL 18

ABC550-04

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nir source

nir source

UBR10000

apd 400- 700 nm

S12926

ABC550-04

NDL5516PC