sony chemical fuse
Abstract: BQ29412 TRANZORB chemical fuse tranzorb diode BAS16 bq20z70 bq20z90 FDS6690A NDS331N
Text: Application Report SLUA393 – August 2006 bq20z70/90 Gas Gauge Circuit Design Doug Williams . Battery Management ABSTRACT Components in the bq20z70/90 chipset reference design are explained in this
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SLUA393
bq20z70/90
sony chemical fuse
BQ29412
TRANZORB
chemical fuse
tranzorb diode
BAS16
bq20z70
bq20z90
FDS6690A
NDS331N
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dale r01f
Abstract: r01f r01f dale AN1204 RESISTOR DALE R01F AN200235-2 AN-1204 LM3488 595D227X9010R2 595D227X9
Text: National Semiconductor Application Note 1204 Chance Dunlap August 2001 Introduction The LM3478 and LM3488 are current mode, low side N channel FET controllers. They can used in numerous configurations including a Boost, Flyback or SEPIC Single Ended Primary Inductor Converter topologies.
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LM3478
LM3488
LM3478/LM3488
AN-1204
dale r01f
r01f
r01f dale
AN1204
RESISTOR DALE R01F
AN200235-2
AN-1204
595D227X9010R2
595D227X9
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6TPE470MI
Abstract: ap 4749 AN-1220 LM2645 diode-dual VJ0805Y102KXX VJ0805Y103KXX
Text: National Semiconductor Application Note 1220 Allan Fisher June 2004 Introduction Although a 1µF capacitor is sufficient to ensure stable operation of the internal regulator OUT3, a 10µF ceramic capacitor is installed on board to eliminate the output voltage
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LM2645
AN-1220
6TPE470MI
ap 4749
AN-1220
diode-dual
VJ0805Y102KXX
VJ0805Y103KXX
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example schematic diagram power supply 12v 1a
Abstract: 6MV1500AX 17C10 design ideas BAT54A FDS6690A LTC1629 LTC1929 example schematic diagram power supply 12v
Text: DESIGN IDEAS High Efficiency PolyPhase Converter Combines Power from Multiple Inputs by Wei Chen and Craig Varga Introduction A Typical Application As more functions are integrated into one IC, the power drawn by a single IC can easily exceed the capability of a
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LTC1929
70mVP-P,
LTC1629
LTC1929.
LTC1629s
12-phase
example schematic diagram power supply 12v 1a
6MV1500AX
17C10
design ideas
BAT54A
FDS6690A
example schematic diagram power supply 12v
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8u2h inductor
Abstract: AN-1239 EEFUE0J151R LM2642 UMK212F10560ZG VJ0805Y471KXAM F-106Z VJ0805Y102KXA
Text: National Semiconductor Application Note 1239 Allan Fisher July 2003 Introduction ation board also includes several optional component pads for reducing switch node ringing and current sense noise, and for low input voltage applicatons. The LM2642 evaluation board has been developed to aid in
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LM2642
8u2h inductor
AN-1239
EEFUE0J151R
UMK212F10560ZG
VJ0805Y471KXAM
F-106Z
VJ0805Y102KXA
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AN-1239
Abstract: EEFUE0J151R LM2642 UMK212F10560ZG VJ0805Y103KXA
Text: National Semiconductor Application Note 1239 Allan Fisher July 2002 Introduction ation board also includes several optional component pads for reducing switch node ringing and current sense noise, and for low input voltage applicatons. The LM2642 evaluation board has been developed to aid in
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LM2642
AN-1239
EEFUE0J151R
UMK212F10560ZG
VJ0805Y103KXA
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AN-1239
Abstract: EEFUE0J151R LM2642 UMK212F10560ZG 20047
Text: National Semiconductor Application Note 1239 Allan Fisher July 2002 Introduction ation board also includes several optional component pads for reducing switch node ringing and current sense noise, and for low input voltage applicatons. The LM2642 evaluation board has been developed to aid in
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LM2642
AN-1239
EEFUE0J151R
UMK212F10560ZG
20047
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PowerPC 970
Abstract: 3.3V 5V buck regulator atx power supply panasonic diode isl6520 datasheet 24v 12v 20A regulator circuit diagram powerPC 440 schematics 405GP/CR ISL6401 440EP 440GX
Text: HIGH PERFORMANCE ANALOG Power Management Application Guide for IBM PowerPCs ® Powering IBM PowerPCs and DDR Memory Increased gate counts and higher clock speeds in microprocessors have resulted in higher current requirements while smaller device geometries mean lower core supply voltages. Both of these trends
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ic 74xx
Abstract: Circuit diagram of Regulated Power supply 6V 5A ISL6227A design of mosfet based power supply ic nor 74xx panasonic diode 6amp 12v ICL7673 EL7566 ISL6401
Text: HIGH PERFORMANCE ANALOG Power Management Application Guide for Motorola PowerPC and PowerQUICC™ Processor – based Systems Embedded systems now require multiple low <3.3V voltages to be supplied to the latest high performance processors, chipsets, FPGAs and memories. At the same time, increased gate counts
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AB-24
Abstract: FAN5056 336V FAN5091 FAN5093 FDB6030L FDS6690 RC5057 RC5058 RC5059
Text: Application Bulletin AB-24 Understanding Droop and Programmable Active Droop -Ron Lenk, Staff Applications Engineer 09/20/00 Programmable Active Droop is a trademark of Fairchild Semiconductor. AB-24 Rev. 0.4 1 Summary Droop adjusts a converter’s output voltage based on its load current to optimize
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AB-24
AB-24
RC5057.
RC5058
FAN5091
120mV.
120mV)
FAN5056
336V
FAN5093
FDB6030L
FDS6690
RC5057
RC5059
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spartan 3a
Abstract: SPARTAN-3 XC3S400 24v 12v 20A regulator circuit diagram power supply SAMSUNG MONITOR str panasonic 614 battery 10nF 50V X7R samsung 7 pin str for 24v 3 amp to 220 package Circuit diagram of Regulated Power supply 6V 5A EL7566 ISL6401
Text: HIGH PERFORMANCE ANALOG Power Management Application Guide for Xilinx FPGAs Using Switchers to Power Xilinx FPGAs and DDR Memory Increased gate counts and higher clock speeds in programmable logic ICs have resulted in higher current requirements while smaller device geometries are driving lower core supply voltages. Both
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945 MOTHERBOARD CIRCUIT diagram
Abstract: panasonic diode circuit diagram of mosfet based power supply design of mosfet based power supply power supply SAMSUNG MONITOR 7 pin str for 24v 3 amp to 220 package HIP6501A ISL6401 power supply SAMSUNG MONITOR str str 1006 switching
Text: HIGH PERFORMANCE ANALOG Power Management Application Guide for Altera FPGAs Using Switchers to Power Altera FPGAs and DDR Memory Increased gate counts and higher clock speeds in FPGAs have resulted in higher current requirements while smaller device geometries mean lower core supply voltages. Both of these trends are leading
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dale r01f
Abstract: r01f r01f dale RESISTOR DALE R01F Vitramon LM3478 LM3488 VJ0805Y104KXXA CRCW0805600R0 LM347
Text: National Semiconductor Application Note 1204 Chance Dunlap July 2002 Introduction 4.5V ≤ VIN ≤ 5.5V VOUT = 12V 0A ≤ IOUT ≤ 1.5A The circuit and bill of materials for this design are given below: The LM3478 and LM3488 are current mode, low side N channel FET controllers. They can utilized in numerous configurations including a Boost, Flyback or SEPIC Single
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LM3478
LM3488
LM3478/LM3488
dale r01f
r01f
r01f dale
RESISTOR DALE R01F
Vitramon
VJ0805Y104KXXA
CRCW0805600R0
LM347
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5027A
Abstract: FDS6690 SOIC-16
Text: January 2000 FDS6690 Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features This N Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching
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FDS6690
OT-23
5027A
FDS6690
SOIC-16
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6690a
Abstract: FDS6690A SOIC-16
Text: October 2001 FDS6690A Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state
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FDS6690A
OT-23
6690a
FDS6690A
SOIC-16
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DIODE AA 119
Abstract: AA MARKING CODE SO8
Text: FDS6690S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6690S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDS6690S
FDS6690S
FDS6690
DIODE AA 119
AA MARKING CODE SO8
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FDS6690A
Abstract: FDS6690S FDS6680S
Text: FDS6690S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6690S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDS6690S
FDS6690S
FDS6690A
FDS6680S
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FDS6690A
Abstract: No abstract text available
Text: FDS6690A tm Single N-Channel, Logic-Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain
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FDS6690A
FDS6690A
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FDS6690A
Abstract: SO-8 gs 069 MOSFET SO-8 gs 069
Text: FDS6690A tm Single N-Channel, Logic-Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain
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FDS6690A
FDS6690A
SO-8 gs 069
MOSFET SO-8
gs 069
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FDS6690AS equivalent
Abstract: FDS6690AS FDS6690A Schottky
Text: FDS6690AS 30V N-Channel PowerTrench SyncFET General Description Features The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDS6690AS
FDS6690AS
FDS6690A
FDS6690AS equivalent
Schottky
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Untitled
Abstract: No abstract text available
Text: FDS6690S N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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FDS6690S
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Untitled
Abstract: No abstract text available
Text: tm FDS6690AS 30V N-Channel PowerTrench SyncFET General Description Features The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDS6690AS
FDS6690AS
FDS6690A
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6690a mosfet
Abstract: FDS6690A 6690a
Text: FDS6690A tm Single N-Channel, Logic-Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain
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FDS6690A
FDS6690A
NF073
6690a mosfet
6690a
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mosfet W03
Abstract: FDS6690A
Text: F/MRCHII-D S E M IC O N D U C T O R April 1999 t FDS6690A Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been
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FDS6690A
mosfet W03
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