smd transistor 712
Abstract: transistor Common Base amplifier class A push pull power amplifier NTC Thermistor smd Fixed resistor 10 k ntc thermistor SMD TRANSISTOR Re computation screw for pcb transistor NTC 1,0 design a common emitter amplifier with a voltage
Text: Application Note Vishay BCcomponents NTC Temperature Compensation of a Common Emitter Voltage Amplifier INTRODUCTION NTC thermistors are still widely used for temperature compensation of electronic circuits. In the “hardware compensation method” the negative
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B25/85
20-Jan-06
smd transistor 712
transistor Common Base amplifier
class A push pull power amplifier
NTC Thermistor smd
Fixed resistor
10 k ntc thermistor
SMD TRANSISTOR Re
computation screw for pcb
transistor NTC 1,0
design a common emitter amplifier with a voltage
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norton amplifier
Abstract: LM3900 VCO jfet discrete differential transistor jfet cascode internal structure of ic lm3900 ULTRA HIGH SPEED FREQUENCY DIVIDER LM359 operational amplifier discrete schematic norton op. amp Designing Type II Compensation for Current Mode
Text: National Semiconductor Application Note 278 Timothy T. Regan September 1981 Why Another Norton Amplifier? there is no Miller effect on the collector-to-base capacitance of the input transistor. Also, there is no collector-to-emitter parasitic feedback in the common base configured transistor, Q2, so the high frequency signal appearing at the output
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AN-278
norton amplifier
LM3900 VCO
jfet discrete differential transistor
jfet cascode
internal structure of ic lm3900
ULTRA HIGH SPEED FREQUENCY DIVIDER
LM359
operational amplifier discrete schematic
norton op. amp
Designing Type II Compensation for Current Mode
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SIT Static Induction Transistor
Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier
Text: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are
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AN1529/D
AN1529
AN1529/D*
SIT Static Induction Transistor
create uhf vhf tv matching transformer
AR165S
Granberg
AR-165S
power bjt advantages and disadvantages
all mosfet vhf power amplifier narrow band
rf POWER BJTs
mrf154 amplifier
bjt ce amplifier
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KTC4079
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC4079 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. E FEATURE B M M ・High Power Gain : Gpe=29dB Typ. (f=10.7MHz) D J 3 1 G A 2 MAXIMUM RATING (Ta=25℃) RATING UNIT Collector-Base Voltage
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KTC4079
KTC4079
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KTC4079
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC4079 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. E FEATURE B M M ᴌHigh Power Gain : Gpe=29dB Typ. (f=10.7MHz) D J 3 1 G A 2 MAXIMUM RATING (Ta=25ᴱ) SYMBOL RATING UNIT
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KTC4079
KTC4079
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KTC*S
Abstract: 10.7MHZ KTC3879S FE3010
Text: SEMICONDUCTOR KTC3879S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. FEATURE E B L L 3 H G A 2 D ᴌHigh Power Gain : Gpe=29dB Typ. (f=10.7MHz) 1 MAXIMUM RATING (Ta=25ᴱ) UNIT Collector-Base Voltage
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KTC3879S
KTC*S
10.7MHZ
KTC3879S
FE3010
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esm 30 450 v
Abstract: KTC4080E
Text: SEMICONDUCTOR KTC4080E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. E FEATURES B ᴌSmall Reverse Transfer Capacitance : Cre=0.7pF Typ. D H G A 2 ᴌLow Noise Figure : NF=2.5dB(Typ.) (f=100MHz).
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KTC4080E
100MHz)
esm 30 450 v
KTC4080E
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3193 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. B FEATURE A ・High Power Gain : Gpe=30dB Typ. (f=10.7MHz). O F ・Recommended for FM IF, OSC Stage and AM CONV, IF Stage.
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KTC3193
455kHz
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10.7Mhz
Abstract: KTC3193 455kH
Text: SEMICONDUCTOR KTC3193 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. B FEATURE A ᴌHigh Power Gain : Gpe=30dB Typ. (f=10.7MHz). O F ᴌRecommended for FM IF, OSC Stage and AM CONV, IF Stage.
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KTC3193
455kHz
10.7Mhz
KTC3193
455kH
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3195 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. B FEATURES A ・Small Reverse Transfer Capacitance O F : Cre=0.7pF Typ. . ・Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).
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KTC3195
100MHz)
200MHz
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3192 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. B C FEATURE A ᴌHigh Power Gain : Gpe=29dB Typ. (f=10.7MHz). N E K J MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC G D SYMBOL
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KTC3192
50MON
455kHz
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KTC3192
Abstract: transistor KTC3192
Text: SEMICONDUCTOR KTC3192 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. B C FEATURE A ᴌHigh Power Gain : Gpe=29dB Typ. (f=10.7MHz). N E K MAXIMUM RATING (Ta=25ᴱ) J SYMBOL RATING UNIT Collector-Base Voltage
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KTC3192
455kHz
KTC3192
transistor KTC3192
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KTC4080
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC4080 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. E FEATURES B M M Small Reverse Transfer Capacitance D A J 2 : Cre=0.7pF Typ. 3 1 G Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).
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KTC4080
100MHz)
KTC4080
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3194 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. B C FEATURES A ᴌSmall Reverse Transfer Capacitance : Cre=0.7pF Typ. . ᴌLow Noise Figure : NF=2.5dB(Typ.) (f=100MHz).
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KTC3194
100MHz)
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OB105
Abstract: test circuit 100MHz KTC3880S
Text: SEMICONDUCTOR KTC3880S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. FEATURES E B L L Small Reverse Transfer Capacitance 2 A H 1 P RATING UNIT Collector-Base Voltage VCBO 40 V
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KTC3880S
OB105
test circuit 100MHz
KTC3880S
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KTC3195
Abstract: test circuit 100MHz transistor ktc3195
Text: SEMICONDUCTOR KTC3195 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. B FEATURES A ᴌSmall Reverse Transfer Capacitance O F : Cre=0.7pF Typ. . ᴌLow Noise Figure : NF=2.5dB(Typ.) (f=100MHz).
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KTC3195
100MHz)
KTC3195
test circuit 100MHz
transistor ktc3195
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KTC3194
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3194 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. B C FEATURES A ᴌSmall Reverse Transfer Capacitance : Cre=0.7pF Typ. . ᴌLow Noise Figure : NF=2.5dB(Typ.) (f=100MHz).
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KTC3194
100MHz)
KTC3194
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TP5015
Abstract: NT 407 F TRANSISTOR
Text: MOTOROLA Order this document by TP5015/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor TP5015 . . . designed for 24 Volt UHF large–signal common emitter amplifier applications in industrial and commercial FM equipment operating in the 380 to
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TP5015/D
TP5015
TP5015/D*
TP5015
NT 407 F TRANSISTOR
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CSA970
Abstract: CSC2240
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-92 Plastic Package CSA970 CSC2240 CSA 970 PNP SILICON PLANAR EPITAXIAL TRANSISTORS CSC 2240 NPN SILICON PLANAR EPITAXIAL TRANSISTORS Low Noise Audio Amplifier B EC DIM A B C
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ISO/TS16949
CSA970
CSC2240
C-120
CSA970
CSC2240
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HN1B26FS
Abstract: No abstract text available
Text: HN1B26FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1B26FS General-Purpose Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 1 6 2 5 3 4 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = −0.95 (typ.) • High hFE
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HN1B26FS
HN1B26FS
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2SA21
Abstract: 2SA2154CT 2SC6026CT
Text: 2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA2154CT General Purpose Amplifier Applications • High voltage and high current : VCEO = −50V, IC = −100mA (max) • Excellent hFE linearity : hFE (IC = −0.1 mA) / hFE (IC = −2 mA)= 0.95 (typ.)
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2SA2154CT
-100mA
2SC6026CT
2SA21
2SA2154CT
2SC6026CT
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KTC9016S
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC9016S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. FEATURES E B L L Small Reverse Transfer Capacitance 2 UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage
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KTC9016S
200MHz
10x8x0
KTC9016S
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CSA970
Abstract: CSC2240 DSA0010683
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-92 Plastic Package CSA970 CSC2240 CSA 970 PNP SILICON PLANAR EPITAXIAL TRANSISTORS CSC 2240 NPN SILICON PLANAR EPITAXIAL TRANSISTORS Low Noise Audio Amplifier B EC
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CSA970
CSC2240
C-120
CSA970
CSC2240
DSA0010683
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KTC3191
Abstract: application of common emitter amplifier
Text: SEMICONDUCTOR KTC3191 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. HF BAND AMPLIFIER APPLICATION. B A FEATURE O F ᴌLow Noise Figure : NF=3.5dB Max. (f=1MHz). H G M MAXIMUM RATING (Ta=25ᴱ) SYMBOL RATING
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KTC3191
KTC3191
application of common emitter amplifier
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