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    APPLICATIONS OF MOS CONTROLLED THYRISTOR Search Results

    APPLICATIONS OF MOS CONTROLLED THYRISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM6J808R Toshiba Electronic Devices & Storage Corporation MOSFET, P-ch, -40 V, -7 A, 0.035 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K819R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 10 A, 0.0258 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K809R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K504NU Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 30 V, 9.0 A, 0.0195 Ohm@10V, UDFN6B, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation

    APPLICATIONS OF MOS CONTROLLED THYRISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M65P100F1

    Abstract: RHRG75120 equivalent MCT thyristor 1000v
    Text: MCTV65P100F1, MCTA65P100F1 NS SIG E D S E M I C O N D U C T O R 0F2 EW R N 65P10 O F D CT3 DED MEN 00F2, M M O 1 REC 65P NOT MCT3A P-Type April 1998 See Features 65A, 1000V MOS Controlled Thyristor MCT Package JEDEC STYLE TO-247 • 65A, -1000V • VTM ≤ -1.4V at I = 65A and +150oC


    Original     		PDF 65P10 MCTV65P100F1, MCTA65P100F1 O-247 -1000V 150oC M65P100F1 RHRG75120 equivalent MCT thyristor 1000v

    MCT thyristor

    Abstract: MCTV75P60E1 MOS Controlled Thyristor MCT harris "MOS Controlled Thyristors" mct thyristor datasheet MCTA75P60E1 MCTV75P6
    Text: Semiconductor IGNS WN DRA EW DES H T I TW ON PAR ETE - N L BSO SS O 75A, 600V P-Type MOS Controlled Thyristor MCT CE April 1999 PRO MCTV75P60E1, MCTA75P60E1 Features Package JEDEC STYLE TO-247 5-LEAD • 75A, -600V ANODE • VTM = -1.3V(Maximum) at I = 75A and +150oC


    Original     		PDF MCTV75P60E1, MCTA75P60E1 O-247 -600V 150oC MO-093AA O-218) MCT thyristor MCTV75P60E1 MOS Controlled Thyristor MCT harris "MOS Controlled Thyristors" mct thyristor datasheet MCTA75P60E1 MCTV75P6

    "mos controlled thyristor"

    Abstract: MOS Controlled Thyristor MCTA65P100F1 1000V MCT M65P100F1 MCTV65P100F1 MCT thyristor MCT thyristor 1000v
    Text: MCTV65P100F1, MCTA65P100F1 S E M I C O N D U C T O R 65A, 1000V P-Type MOS Controlled Thyristor MCT April 1995 Features Package JEDEC STYLE TO-247 • 65A, -1000V • VTM ≤ -1.4V at I = 65A and +150oC ANODE ANODE CATHODE GATE RETURN CATHODE (FLANGE) • 2000A Surge Current Capability


    Original     		PDF MCTV65P100F1, MCTA65P100F1 O-247 -1000V 150oC MO-093AA O-218) "mos controlled thyristor" MOS Controlled Thyristor MCTA65P100F1 1000V MCT M65P100F1 MCTV65P100F1 MCT thyristor MCT thyristor 1000v

    MOS Controlled Thyristor

    Abstract: mct 575 "MOS Controlled Thyristors" "mos controlled thyristor" MCT thyristor Thyristors application circuits
    Text: MCTG35P60F1 S E M I C O N D U C T O R April 1998 NS DESIG W E N 2 R P100F ED FO MEND 2, MCT3D65 M O C E P-Type NOT R T3A65P100F C M e e S Features 35A, 600V MOS Controlled Thyristor MCT Package • 35A, -600V JEDEC STYLE TO-247 o • VTM = -1.3V(Maximum) at I = 35A and +150 C


    Original     		PDF P100F MCT3D65 T3A65P100F MCTG35P60F1 O-247 -600V 150oC MOS Controlled Thyristor mct 575 "MOS Controlled Thyristors" "mos controlled thyristor" MCT thyristor Thyristors application circuits

    MOS Controlled Thyristor

    Abstract: MCT thyristor "MOS Controlled Thyristors" 100DV MCTG35P60F1 MCTG35P6
    Text: MCTG35P60F1 Semiconductor April 1999 WN IGNS ITHDRA W T R W DES A E P N O N EP-Type SOLET ESS OB PROC Features 35A, 600V MOS Controlled Thyristor MCT Package • 35A, -600V JEDEC STYLE TO-247 o • VTM = -1.3V(Maximum) at I = 35A and +150 C A • 800A Surge Current Capability


    Original     		PDF MCTG35P60F1 -600V O-247 150oC MOS Controlled Thyristor MCT thyristor "MOS Controlled Thyristors" 100DV MCTG35P60F1 MCTG35P6

    MOS Controlled Thyristor

    Abstract: MCTA75P60E1 MCTV75P60E1
    Text: MCTV75P60E1, MCTA75P60E1 S E M I C O N D U C T O R 75A, 600V P-Type MOS Controlled Thyristor MCT April 1995 Features Package JEDEC STYLE TO-247 5-LEAD • 75A, -600V ANODE • VTM = -1.3V(Maximum) at I = 75A and +150oC • 2000A Surge Current Capability


    Original     		PDF MCTV75P60E1, MCTA75P60E1 O-247 -600V 150oC MO-093AA O-218) MOS Controlled Thyristor MCTA75P60E1 MCTV75P60E1

    MOS Controlled Thyristor

    Abstract: MCT thyristor "MOS Controlled Thyristors" mos Turn-off Thyristor MCTG35P60F1 MCTS "mos controlled thyristor"
    Text: MCTG35P60F1 S E M I C O N D U C T O R 35A, 600V P-Type MOS Controlled Thyristor MCT April 1995 Features Package • 35A, -600V JEDEC STYLE TO-247 o • VTM = -1.3V(Maximum) at I = 35A and +150 C A • 800A Surge Current Capability K • 800A/µs di/dt Capability


    Original     		PDF MCTG35P60F1 -600V O-247 150oC MOS Controlled Thyristor MCT thyristor "MOS Controlled Thyristors" mos Turn-off Thyristor MCTG35P60F1 MCTS "mos controlled thyristor"

    "MOS Controlled Thyristors"

    Abstract: MCT thyristor MOS Controlled Thyristor M65P100F1 MCTV65P100F1 MOS-Controlled Thyristor 1000V MCT MCTA65P100F1 2000A MOS MCTV65P1
    Text: Semiconductor S April 1999 CES PRO NS N RAW W DESIG D H T T WI O NE PAR ETE - N OL OBS MCTV65P100F1, MCTA65P100F1 65A, 1000V P-Type MOS Controlled Thyristor MCT Features Package JEDEC STYLE TO-247 • 65A, -1000V • VTM ≤ -1.4V at I = 65A and +150oC ANODE ANODE


    Original     		PDF MCTV65P100F1, MCTA65P100F1 O-247 -1000V 150oC MO-093AA O-218) "MOS Controlled Thyristors" MCT thyristor MOS Controlled Thyristor M65P100F1 MCTV65P100F1 MOS-Controlled Thyristor 1000V MCT MCTA65P100F1 2000A MOS MCTV65P1

    MOS Controlled Thyristor

    Abstract: MCT thyristor MCTV75P60E1 MA75P60E1
    Text: April 1998 NS ESIG 2 D 00F NEW S E M I C O N D U C T O R OR 3D65P1 F D NDE MCT MME 100F2, O C RE 65P NOT MCT3A See MCTV75P60E1, MCTA75P60E1 75A, 600V P-Type MOS Controlled Thyristor MCT Features Package JEDEC STYLE TO-247 5-LEAD • 75A, -600V ANODE • VTM = -1.3V(Maximum) at I = 75A and +150oC


    Original     		PDF 3D65P1 100F2, MCTV75P60E1, MCTA75P60E1 O-247 -600V 150oC MOS Controlled Thyristor MCT thyristor MCTV75P60E1 MA75P60E1

    MCT thyristor

    Abstract: MOS Controlled Thyristor MCT harris mct 600v MCTV35P60F1D diode ik 60
    Text: MCTV35P60F1D S E M I C O N D U C T O R 35A, 600V P-Type MOS Controlled Thyristor MCT with Anti-Parallel Diode March 1995 Features Package • 35A, -600V JEDEC STYLE TO-247 • VTM = -1.35V (Max) at I = 35A and +150oC • 800A Surge Current Capability A • 800A/µs di/dt Capability


    Original     		PDF MCTV35P60F1D -600V O-247 150oC factor/100) MCT thyristor MOS Controlled Thyristor MCT harris mct 600v MCTV35P60F1D diode ik 60

    MCT thyristor

    Abstract: mct 600v MCT harris MOS Controlled Thyristor MCTV35P60F1D MCTV35P6
    Text: MCTV35P60F1D Semiconductor April 1999 AWN NS 35A, 600V ITHDR DESIG PART W E - NO NEW Thyristor MCT OLET S OBS S PROCE Features P-Type MOS Controlled with Anti-Parallel Diode Package • 35A, -600V JEDEC STYLE TO-247 • VTM = -1.35V (Max) at I = 35A and +150oC


    Original     		PDF MCTV35P60F1D -600V O-247 150oC factor/100) MCT thyristor mct 600v MCT harris MOS Controlled Thyristor MCTV35P60F1D MCTV35P6

    MCT thyristor

    Abstract: MCT harris 3A65P100F2 IK25 THYRISTOR 35A 300V diode ik 60
    Text: MCTV35P60F1D S E M I C O N D U C T O R April 1998 S DESIGN R NEW O F 2 F D E 35A, 600V ND P10 COMME CT3D65 NOT RE 3A65P100F2, M Thyristor MCT T See MC Features P-Type MOS Controlled with Anti-Parallel Diode Package • 35A, -600V JEDEC STYLE TO-247 • VTM = -1.35V (Max) at I = 35A and +150oC


    Original     		PDF MCTV35P60F1D O-247 CT3D65 3A65P100F2, -600V 150oC factor/100) MCT thyristor MCT harris 3A65P100F2 IK25 THYRISTOR 35A 300V diode ik 60

    semikron thyristor

    Abstract: SCHEMATIC circuit scr H-Bridge "IGBT h-bridge" scr h-bridge IGBT ac switch circuit SK100KQ12 SK100KQ16 3 phase motor inverters circuit diagram igbt applications of mos controlled thyristor SKKT5616E
    Text: Semikron Thyristor, Diode and IGBT Modules SEMIKRON invented the SEMIPACK¨, the beginning of a new industry standard for isolated power semiconductor modules. The SEMIKRON power modules represent quality, continued innovation and engineering know-how that reduce


    Original     		PDF 25GB063 45GB063 30GB123 25GD063 45GD063 20GD123 15GH063 25GH063 45GH063 20GH123 semikron thyristor SCHEMATIC circuit scr H-Bridge "IGBT h-bridge" scr h-bridge IGBT ac switch circuit SK100KQ12 SK100KQ16 3 phase motor inverters circuit diagram igbt applications of mos controlled thyristor SKKT5616E

    NTE5457

    Abstract: NTE5455 NTE5456 SCR NTE5457 NTE5452 NTE5458 scr 5 amp NTE5454 SCR TRIGGER PULSE circuit SCR Gate Drive
    Text: NTE5452 thru NTE5458 Silicon Controlled Rectifier SCR 4 Amp Sensitive Gate Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be


    Original     		PDF NTE5452 NTE5458 NTE5458 NTE5452 NTE5453 NTE5457 NTE5455 NTE5456 SCR NTE5457 scr 5 amp NTE5454 SCR TRIGGER PULSE circuit SCR Gate Drive

    MCT harris

    Abstract: M65P100F2 TA49226 scr 2032 MCT3A65P100F2 MCT thyristor MCT3D65P100F2 MOS-Controlled Thyristor MCT thyristor 1000v
    Text: MCT3A65P100F2 MCT3D65P100F2 S E M I C O N D U C T O R 65A, 1000V, P-Type MOS-Controlled Thyristor MCT January 1998 Features Description • 65A, -1000V The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an


    Original     		PDF MCT3A65P100F2 MCT3D65P100F2 150nts 1-800-4-HARRIS MCT harris M65P100F2 TA49226 scr 2032 MCT thyristor MCT3D65P100F2 MOS-Controlled Thyristor MCT thyristor 1000v

    NTE5457

    Abstract: NTE5455 NTE5452 NTE5456 NTE5453 NTE5454 NTE5458
    Text: NTE5452 thru NTE5458 Silicon Controlled Rectifier SCR 4 Amp Sensitive Gate, TO202 Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse−blocking triode thyristors may be


    Original     		PDF NTE5452 NTE5458 NTE5458 NTE5452 NTE5453 NTE5457 NTE5455 NTE5456 NTE5453 NTE5454

    MOS-Controlled Thyristor

    Abstract: MOS Controlled Thyristor MCT thyristor TA49226 MCT harris MCT3A65P100F2 MCT thyristor 1000v MCT3D65P100F2 "MOS Controlled Thyristors" 100A gate turn-off
    Text: MCT3A65P100F2, MCT3D65P100F2 Semiconductor CE April 1999 [ /Title MCT3 A65P1 00F2, MCT3 D65P1 00F2 /Subject (65A, 1000V, PType MOSControlled Thyristor (MCT) ) /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark IGNS WN DRA EW DES H T I TW ON PAR ETE - N


    Original     		PDF MCT3A65P100F2, MCT3D65P100F2 A65P1 D65P1 -1000V 150oC MO-093AA MOS-Controlled Thyristor MOS Controlled Thyristor MCT thyristor TA49226 MCT harris MCT3A65P100F2 MCT thyristor 1000v MCT3D65P100F2 "MOS Controlled Thyristors" 100A gate turn-off

    MOS-Controlled Thyristor

    Abstract: SMCTAA32N14A10 mos 1200v to-247 800v nmos MOS Controlled Thyristor MOS-Controlled Thyristor N-type 103-290 Solidtron RG-47 MOS-Controlled Thyristor to-247
    Text: SMCTAA32N14A10 Advanced Pulse Power Device 275 Great Valley Parkway Malvern, PA 19355 Ph: 610-407-4700 N-MOS VCS, TO-247 Data Sheet Rev 0 - 12/19/07 Description Package Size - 4 This voltage controlled SolidtronTM (VCS) discharge switch utilizes an n-type MOS-Controlled Thyristor mounted in a five


    Original     		PDF SMCTAA32N14A10 O-247 O-247 04242009-NB-0010 MOS-Controlled Thyristor SMCTAA32N14A10 mos 1200v to-247 800v nmos MOS Controlled Thyristor MOS-Controlled Thyristor N-type 103-290 Solidtron RG-47 MOS-Controlled Thyristor to-247

    TA32N14A10

    Abstract: MOS-Controlled Thyristor MCT thyristor 63SN 37PB SOLDER TA32N14 ta32n14a KA NMOS 1400V MCT 302oC Solidtron
    Text: SMCT TA32N14A10 Advanced Pulse Power Device N-MOS VCS, ThinPakTM Description Package This voltage controlled Solidtron VCS discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a ThinPakTM, ceramic "chip-scale" hybrid. Gate Return Bond Area


    Original     		PDF TA32N14A10 63pb/37sn 260oC TA32N14A10 MOS-Controlled Thyristor MCT thyristor 63SN 37PB SOLDER TA32N14 ta32n14a KA NMOS 1400V MCT 302oC Solidtron

    MOS-Controlled Thyristor

    Abstract: SMCTAA65N14A10 Solidtron MOS Controlled Thyristor MOS-Controlled Thyristor N-type
    Text: SMCTAA65N14A10 SolidtronTM 275 Great Valley Parkway Malvern, PA 19355 Ph: 610-407-4700 N-MOS VCS, TO-247 Data Sheet Rev 0 - 02/15/08 Description Package Size - 6 This Voltage Controlled SolidtronTM (VCS) discharge switch utilizes an n-type MOS-Controlled Thyristor mounted in a five


    Original     		PDF SMCTAA65N14A10 O-247 O-247 260oC 04242009-NB-0012 MOS-Controlled Thyristor SMCTAA65N14A10 Solidtron MOS Controlled Thyristor MOS-Controlled Thyristor N-type

    Untitled

    Abstract: No abstract text available
    Text: CTG35P60F1 35A, 600V -Type MOS Controlled Thyristor MCT Features • 35A,-600V • VTM = -1.3V(Maximum) at I = 35A and +150°C • 800A Surge Current Capability • 800A/|.is di/dt Capability • MOS Insulated Gate Control • 50A Gate Turn-Off Capability at +150°C


    OCR Scan     		PDF CTG35P60F1 -600V

    Untitled

    Abstract: No abstract text available
    Text: MCTV65P100F1, MCTA65P100F1 H A R R IS X Semiconductor * # $ * » * * * * April 1999 65 A, 1000V P-Type MOS Controlled Thyristor MCT cess p *0 < Features Package JEDEC STYLE TO-247 • 65A,-1000V ANODE • VTM < -1.4V at I = 65A and +150°C CATHODE (FLANGE)


    OCR Scan     		PDF MCTV65P100F1, MCTA65P100F1 O-247 -1000V 000A/| MO-093AA O-218)

    Untitled

    Abstract: No abstract text available
    Text: MCTV75P60E1, i MCTA75P60E1 HARM S X Semiconductor 75A, 600V P-Type MOS Controlled Thyristor MCT p * 0 ' Cfcs S April 1999 Features Package JEDEC STYLE TO-247 5-LEAD • 75A ,-6 00V A NO DE • VTM = -1.3V(Maxim um ) at I = 75A and +150°C • 2000A Surge Current Capability


    OCR Scan     		PDF MCTV75P60E1, MCTA75P60E1 O-247 000A/| O-093AA O-218)

    MOS Controlled Thyristor

    Abstract: TA49226
    Text: HX A R R IS MCT3A65P100F2, MCT3D65P100F2 Semiconductor 'NnV' 0 lo<*6'N April 1999 65A, 1000V, P-Type MOS-Controlled Thyristor (MCT p *0 Description Features 65A, -1000V The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an


    OCR Scan     		PDF MCT3A65P100F2, MCT3D65P100F2 -1000V 000A/| MOS Controlled Thyristor TA49226