APQ08SN50BF
Abstract: No abstract text available
Text: DEVICE SPECIFICATION APQ08SN50BH APQ08SN50BF 500V/8A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
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APQ08SN50BH
APQ08SN50BF
00V/8A
APQ08SN50BF
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Untitled
Abstract: No abstract text available
Text: DEVICE SPECIFICATION APQ08SN50BH APQ08SN50BF 500V/8A N-Channel MOSFET 2 Features 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
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Original
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PDF
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APQ08SN50BH
APQ08SN50BF
00V/8A
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