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Abstract: No abstract text available
Text: DEVICE SPECIFICATION APQ16SN06AA APQ16SN06AB 60V/16A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
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Original
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PDF
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APQ16SN06AA
APQ16SN06AB
0V/16A
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521 MOSFET
Abstract: MOSFET 546
Text: DEVICE SPECIFICATION APQ16SN06AA APQ16SN06AB 60V/16A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
|
Original
|
PDF
|
APQ16SN06AA
APQ16SN06AB
0V/16A
521 MOSFET
MOSFET 546
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