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    Abstract: No abstract text available
    Text: DEVICE SPECIFICATION APQ16SN06AA APQ16SN06AB 60V/16A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide


    Original     		PDF APQ16SN06AA APQ16SN06AB 0V/16A

    521 MOSFET

    Abstract: MOSFET 546
    Text: DEVICE SPECIFICATION APQ16SN06AA APQ16SN06AB 60V/16A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide


    Original     		PDF APQ16SN06AA APQ16SN06AB 0V/16A 521 MOSFET MOSFET 546