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    Untitled

    Abstract: No abstract text available
    Text: DEVICE SPECIFICATION APQ5ESN40AH APQ5ESN40AF 400V/5.5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially


    Original     		PDF APQ5ESN40AH APQ5ESN40AF 00V/5

    Untitled

    Abstract: No abstract text available
    Text: DEVICE SPECIFICATION APQ5ESN40AH APQ5ESN40AF 400V/5.5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially


    Original     		PDF APQ5ESN40AH APQ5ESN40AF 00V/5

    mosfet 400V

    Abstract: No abstract text available
    Text: DEVICE SPECIFICATION APQ5ESN40AH APQ5ESN40AF 400V/5.5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially


    Original     		PDF APQ5ESN40AH APQ5ESN40AF 00V/5 mosfet 400V