4x4 mimo
Abstract: No abstract text available
Text: Agilent N7109A Data Sheet Multi-Channel Signal Analyzer DISCOVER the Alternatives. . Agilent MODULAR Products AD APT A S M IM O T ES T IN G E V O L V E S OV ERV I EW F eatures In the development of next-generation wireless technologies, MIMO measurements are becoming an essential
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N7109A
N7109A
5990-6732EN
4x4 mimo
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NS6040
Abstract: apt 2100
Text: APTM100UM45F-AlN VDSS = 1000V RDSon = 45mΩ typ @ Tj = 25°C ID = 215A @ Tc = 25°C Single Switch MOSFET Power Module SK S D DK G S Features • Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode
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APTM100UM45F-AlN
NS6040
apt 2100
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Untitled
Abstract: No abstract text available
Text: APTM120UM70F-AlN Single switch MOSFET Power Module SK S D DK G S D SK Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance
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APTM120UM70F-AlN
APTM120UM70F
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Untitled
Abstract: No abstract text available
Text: APTM100UM45F-AlN VDSS = 1000V RDSon = 45mΩ max @ Tj = 25°C ID = 215A @ Tc = 25°C Single Switch MOSFET Power Module SK S D DK G S Features • Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode
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APTM100UM45F-AlN
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Untitled
Abstract: No abstract text available
Text: APTM50AM38ST Phase leg Series & parallel diodes MOSFET Power Module NTC2 VBUS Q1 G1 OUT S1 Q2 G2 0/VBU S S2 NTC1 OUT VBUS 0/VBUS OUT S1 S2 NTC2 G1 G2 NTC1 VDSS = 500V RDSon = 38mW max @ Tj = 25°C ID = 90A @ Tc = 25°C Application • Motor control · Switched Mode Power Supplies
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APTM50AM38ST
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APT0406
Abstract: APTGT150SK60T
Text: APTGT150SK60T Buck chopper Trench + Field Stop IGBT Power Module NT C2 Q1 G1 E1 OUT 0/VBU S SENSE 0/VBU S NT C1 0/VBUS SENSE VBUS E1 G1 OUT OUT 0/VBUS NTC2 0/VBUS SENSE NTC1 Application • AC and DC motor control • Switched Mode Power Supplies Features
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APTGT150SK60T
APT0406
APTGT150SK60T
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2100A
Abstract: No abstract text available
Text: APTGT150DA60T VCES = 600V IC = 150A @ Tc = 80°C Boost chopper Trench + Field Stop IGBT Power Module VBUS VB US SENS E NT C2 Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction CR1 E2 NT C1 0/VBU S G2 OUT
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APTGT150DA60T
2100A
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APT0406
Abstract: APTGT150DU60T
Text: APTGT150DU60T Dual common source Trench + Field Stop IGBT Power Module C1 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies C2 Q1 VCES = 600V IC = 150A @ Tc = 80°C Q2 G1 G2 E NTC1 NTC2 G2 C2 E2 C1 C2 E E1 E2
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APTGT150DU60T
APT0406
APTGT150DU60T
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APT0406
Abstract: APTGT150A60T
Text: APTGT150A60T Phase leg Trench + Field Stop IGBT Power Module Q1 G1 E1 OUT Q2 G2 E2 0/VBUS NT C1 G2 OUT E2 VBUS OUT 0/VBUS E1 E2 NTC2 G1 G2 NTC1 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control
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APTGT150A60T
APT0406
APTGT150A60T
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dk 434
Abstract: No abstract text available
Text: APTM100UM45D-AlN Single switch with Series diode MOSFET Power Module SK VDSS = 1000V RDSon = 45mΩ max @ Tj = 25°C ID = 215A @ Tc = 25°C Application D G DK DK S D SK G • Zero Current Switching resonant mode Features • Power MOS 7 MOSFETs - Low RDSon
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APTM100UM45D-AlN
dk 434
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290A transistor
Abstract: No abstract text available
Text: APTM20UM03F-AlN Single Switch MOSFET Power Module SK S D DK G S D Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance
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APTM20UM03F-AlN
APTM20UM03F
290A transistor
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Untitled
Abstract: No abstract text available
Text: APTM120UM70D-AlN Single switch with Series diodes MOSFET Power Module VDSS = 1200V RDSon = 70mΩ max @ Tj = 25°C ID = 171A @ Tc = 25°C Application • Zero Current Switching resonant mode SK D DK DK S D SK G Benefits • Outstanding performance at high frequency operation
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APTM120UM70D-AlN
APTM120UM70D
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N mosfet 100v 600A
Abstract: APTM10UM01FA DS66
Text: APTM10UM01FA VDSS = 100V RDSon = 1.5mΩ typ @ Tj = 25°C ID = 860A* @ Tc = 25°C Single Switch MOSFET Power Module SK S D DK G S D SK Features • Power MOS V FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated
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APTM10UM01FA
APTM10UM01FA
N mosfet 100v 600A
APTM10UM01FA
DS66
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APTGT150TDU60P
Abstract: No abstract text available
Text: APTGT150TDU60P Triple Dual Common Source Trench + Field Stop IGBT Power Module G3 E1 G5 E5 E3 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 C6 C3 G1 E1/E2 C2 E1 C5 G5 G3 E3/E4 E3 E5/E6 E5 E2 E4 E6 G2 G4 G6 C4 C6 Features • Trench + Field Stop IGBT® Technology
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APTGT150TDU60P
APTGT150TDU60P
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SO 227 Package
Abstract: RY 227 ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES apt 2100
Text: 2 3 2 2 3 1 1 4 1 3 27 2 T- 4 SO 4 Anti-Parallel Parallel APT2X100D120J APT2X101D120J APT2X100D120J 1200V 100A APT2X101D120J 1200V 100A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode
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APT2X100D120J
APT2X100D120J
APT2X101D120J
APT2X101D120J
OT-227
APT2X100/2X101D120J
SO 227 Package
RY 227
ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES
apt 2100
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APT50M50L2LL
Abstract: APT2X100D40J APT2X101D40J H100
Text: 2 3 2 2 3 3 1 1 4 1 4 4 Anti-Parallel Parallel APT2X100D40J APT2X101D40J 27 2 T- SO APT2X101D40J APT2X100D40J 400V 100A 400V 100A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode
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APT2X101D40J
APT2X100D40J
OT-227
APT50M50L2LL
APT2X100D40J
APT2X101D40J
H100
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Untitled
Abstract: No abstract text available
Text: 2 3 2 2 3 3 1 1 4 1 4 4 Anti-Parallel Parallel APT2X100D40J APT2X101D40J 27 2 T- SO APT2X101D40J APT2X100D40J 400V 100A 400V 100A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode
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APT2X101D40J
APT2X100D40J
OT-227
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APT30M40
Abstract: No abstract text available
Text: APT30M40LVR 76A 0.040Ω 300V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
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APT30M40LVR
O-264
O-264
APT30M40LVR
APT30M40
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Untitled
Abstract: No abstract text available
Text: APT30M40JVR 70A 0.040Ω 300V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT30M40JVR
OT-227
E145592
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Untitled
Abstract: No abstract text available
Text: APT30M40B2VR APT30M40LVR 300V 76A 0.040W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT30M40B2VR
APT30M40LVR
O-264
APT30M40
O-247
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Untitled
Abstract: No abstract text available
Text: APT25GP90BDQ1 G 900V TYPICAL PERFORMANCE CURVES APT25GP90BDQ1 APT25GP90BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching
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APT25GP90BDQ1
APT25GP90BDQ1
APT25GP90BDQ1G*
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MA4GM316
Abstract: No abstract text available
Text: M/A-COM ADV SEMICONDUCTOR Apt< S7 E D Sk42163 0D0034b h r ^ /3 - o j MA4GM316A-500 MA4GM316A SERIES GaAs M M IC D C -2 GHz 6 0 dB Variable Attenuator 2000 2010 2012 2100 Features • SINGLE* OR DUAL DC BIAS CONTROL ■ EASILY CASCADABLE ■ 60 dB ATTENUATION RANGE
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Sk42163
0D0034b
MA4GM316A-500
MA4GM316A
MA4GM316
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apt 2100
Abstract: No abstract text available
Text: APT30M40LVFR ADVANCED PO W ER Te c h n o l o g y 300V 76A 0.040Q POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT30M40LVFR
O-264
apt 2100
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rnq ah-16
Abstract: No abstract text available
Text: • R A dvanced W .\A APT30M40LVR pow er Te c h n o l o g y “ 300V 76a 0.040q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT30M40LVR
O-264
APT30M40LVR
rnq ah-16
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