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    APT150 Price and Stock

    Microchip Technology Inc APT150GN60JDQ4

    IGBT MOD 600V 220A 536W ISOTOP
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    DigiKey APT150GN60JDQ4 Tube 20 1
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    Microchip Technology Inc APT150GN120JDQ4

    IGBT MOD 1200V 215A 625W ISOTOP
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    DigiKey APT150GN120JDQ4 Tube 9 1
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    Microchip Technology Inc APT150GN60J

    IGBT MOD 600V 220A 536W ISOTOP
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    DigiKey APT150GN60J Tube 20
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    Microchip Technology Inc APT150GN120J

    IGBT MOD 1200V 215A 625W ISOTOP
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    DigiKey APT150GN120J Tube 1
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    Microchip Technology Inc APT150GT120JR

    IGBT MOD 1200V 170A 830W ISOTOP
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    APT150 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT150DL60B2G Microsemi Fast Recovery Epitaxial Diode; Package: T-MAX [B2]; IO (A): 150; VR (V): 600; trr (nsec): 53; VF (V): 1.25; Qrr (nC): 3800; Original PDF
    APT150GN120J Advanced Power Technology IGBTs - Modules, Discrete Semiconductor Products, IGBT 1200V 215A 625W SOT227 Original PDF
    APT150GN120J Advanced Power Technology IGBT Original PDF
    APT150GN120J Microsemi Discrete Semiconductor Products - Transistors - IGBTs - Modules - IGBT 1200V 215A 625W SOT227 Original PDF
    APT150GN120JDQ4 Microsemi Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP ; BV(CES) (V): 1200; IC (A): 99; Original PDF
    APT150GN60B2G Microsemi Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: T-MAX [B2]; BV(CES) (V): 600; IC (A): 190; Original PDF
    APT150GN60J Microsemi Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequ Original PDF
    APT150GN60JDQ4 Advanced Power Technology IGBT Original PDF
    APT150GN60JDQ4 Microsemi Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequ Original PDF
    APT150GN60LDQ4G Microsemi Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: TO-264 [L]; BV(CES) (V): 600; VCE(sat) (V): 1.85; IC (A): 220; Original PDF
    APT150GT120JR Microsemi Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP ; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 90; Original PDF

    APT150 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: APT150GN60JDQ4 600V TYPICAL PERFORMANCE CURVES APT150GN60JDQ4 E E Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE ON and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and


    Original     		APT150GN60JDQ4 PDF

    APT100DQ120

    Abstract: No abstract text available
    Text: APT150GN120J 1200V TYPICAL PERFORMANCE CURVES APT150GN120J E E Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE ON and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and


    Original     		APT150GN120J APT100DQ120 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT150GN60J 600V TYPICAL PERFORMANCE CURVES APT150GN60J E E Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE ON and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and


    Original     		APT150GN60J PDF

    7078

    Abstract: APT100DQ120 APT150GT120JR
    Text: APT150GT120JR 1200V, 150A, VCE ON = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using NonPunch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		APT150GT120JR 50KHz E145592 7078 APT100DQ120 APT150GT120JR PDF

    150a 400v diode bridge

    Abstract: 6075A
    Text: APT150DL60B2 G 600V 150A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)


    Original     		APT150DL60B2 O-247 150a 400v diode bridge 6075A PDF

    apt100dq60

    Abstract: APT150GN60J MIC4452 THOMSON IGBT silicon carbide
    Text: APT150GN60J 600V TYPICAL PERFORMANCE CURVES APT150GN60J E E Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE ON and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and


    Original     		APT150GN60J apt100dq60 APT150GN60J MIC4452 THOMSON IGBT silicon carbide PDF

    APT150GN60JDQ4

    Abstract: APT100DQ60 APT100GN60LDQ4 MIC4452
    Text: APT150GN60JDQ4 600V TYPICAL PERFORMANCE CURVES APT150GN60JDQ4 E E Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE ON and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and


    Original     		APT150GN60JDQ4 APT150GN60JDQ4 APT100DQ60 APT100GN60LDQ4 MIC4452 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT150GT120JR 1200V, 150A, VCE ON = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using NonPunch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		APT150GT120JR 50KHz E145592 PDF

    Untitled

    Abstract: No abstract text available
    Text: 600V APT150GN60LDQ4 G Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and


    Original     		APT150GN60LDQ4 PDF

    APT150GN120J

    Abstract: APT100DQ120 MIC4452
    Text: APT150GN120J 1200V TYPICAL PERFORMANCE CURVES APT150GN120J E E Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE ON and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and


    Original     		APT150GN120J APT150GN120J APT100DQ120 MIC4452 PDF

    APT100DQ60

    Abstract: APT150GN60J MIC4452 apt100d
    Text: TYPICAL PERFORMANCE CURVES APT150GN60B2 G 600V APT150GN60B2(G) Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and


    Original     		APT150GN60B2 APT100DQ60 APT150GN60J MIC4452 apt100d PDF

    APT150GN120J

    Abstract: No abstract text available
    Text: APT150GN120J 1200V TYPICAL PERFORMANCE CURVES APT150GN120J E E Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE ON and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and


    Original     		APT150GN120J APT150GN120J E145592 PDF

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT150GN60B2 G 600V APT150GN60B2(G) Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and


    Original     		APT150GN60B2 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT150DL60B2 G 600V 150A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)


    Original     		APT150DL60B2 O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT150DL60B2 G 600V 150A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)


    Original     		APT150DL60B2 O-247 PDF

    APT150GN120JDQ4

    Abstract: APT100DQ120 SMPS SOLAR 1504 APT150GN120J
    Text: APT150GN120JDQ4 1200V, 150A, VCE ON = 3.2V Typical Utilizing the latest Field Stop and Trench Gate technologies, these IGBT’s have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a


    Original     		APT150GN120JDQ4 E145592 APT150GN120JDQ4 APT100DQ120 SMPS SOLAR 1504 APT150GN120J PDF

    APT100DQ60

    Abstract: APT100GN60LDQ4 APT150GN60JDQ4 MIC4452 9735 h
    Text: APT150GN60JDQ4 600V TYPICAL PERFORMANCE CURVES APT150GN60JDQ4 E E Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE ON and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and


    Original     		APT150GN60JDQ4 APT100DQ60 APT100GN60LDQ4 APT150GN60JDQ4 MIC4452 9735 h PDF

    Untitled

    Abstract: No abstract text available
    Text: APT150GN120JDQ4 1200V, 150A, VCE ON = 3.2V Typical Utilizing the latest Field Stop and Trench Gate technologies, these IGBT’s have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a


    Original     		APT150GN120JDQ4 E145592 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT150GT120JR 1200V, 150A, VCE ON = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using NonPunch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		APT150GT120JR 50KHz E145592 fo227 PDF

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


    Original     		des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit PDF

    sot-227 footprint

    Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
    Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF

    SOT-227 lead frame

    Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series
    Text: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic


    Original     		MIL-PRF-19500, sO-268 O-220 O-220 O-247 O-264 OT-227 SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series PDF