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    APT2X31S20J Price and Stock

    Microchip Technology Inc APT2X31S20J

    DIODE MOD SCHOTT 200V 45A ISOTOP
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    DigiKey APT2X31S20J Tube 365 1
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    Avnet Americas APT2X31S20J Tube 22 Weeks 30
    • 1 $21.44
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    Mouser Electronics APT2X31S20J 142
    • 1 $21.44
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    Verical APT2X31S20J 39 3
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    Newark APT2X31S20J Bulk 30
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    Future Electronics APT2X31S20J 30
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    Microchip Technology Inc APT2X31S20J
    • 1 $21.44
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    Onlinecomponents.com APT2X31S20J 39
    • 1 $23.82
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    TME APT2X31S20J 1
    • 1 $27.94
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    NAC APT2X31S20J Tube 17
    • 1 $19.91
    • 10 $19.91
    • 100 $18.34
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    Richardson RFPD APT2X31S20J 1
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    EBV Elektronik APT2X31S20J 23 Weeks 30
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    Master Electronics APT2X31S20J 39
    • 1 $23.82
    • 10 $21.25
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    APT2X31S20J Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT2X31S20J Advanced Power Technology HIGH VOLTAGE SCHOTTKY DIODE Original PDF
    APT2X31S20J Advanced Power Technology HIGH VOLTAGE SCHOTTKY DIODE Original PDF
    APT2X31S20J Microsemi Schottky Discrete RECTIFIER Original PDF

    APT2X31S20J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2 3 2 2 3 1 1 4 1 3 27 2 T- 4 SO 4 Anti-Parallel Parallel APT2X30S20J APT2X31S20J APT2X30S20J APT2X31S20J 200V 200V 30A 30A DUAL DIE ISOTOP PACKAGE HIGH VOLTAGE SCHOTTKY DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times


    Original     		PDF APT2X30S20J APT2X31S20J APT2X30S20J OT-227

    APT20M36BLL

    Abstract: APT2X30S20J APT2X31S20J H100
    Text: 2 3 2 2 3 3 1 1 4 1 SO 4 Anti-Parallel Parallel APT2X30S20J APT2X31S20J 27 2 T- 4 APT2X31S20J APT2X30S20J 200V 200V 45A 45A DUAL DIE ISOTOP PACKAGE HIGH VOLTAGE SCHOTTKY DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times


    Original     		PDF APT2X31S20J APT2X30S20J OT-227 APT20M36BLL APT2X30S20J APT2X31S20J H100

    APT20M36BLL

    Abstract: APT2X31S20J H100
    Text: 2 2 3 1 1 3 27 2 T- 4 SO 4 Parallel APT2X31S20J APT2X31S20J 200V 45A DUAL DIE ISOTOP PACKAGE HIGH VOLTAGE SCHOTTKY DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics


    Original     		PDF APT2X31S20J OT-227 APT20M36BLL APT2X31S20J H100

    APT 5060

    Abstract: No abstract text available
    Text: 2 2 3 3 1 1 7 22 OT 4 S 4 Parallel APT2X31S20J APT2X31S20J 200V 30A DUAL DIE ISOTOP PACKAGE HIGH VOLTAGE SCHOTTKY DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics


    Original     		PDF APT2X31S20J OT-227 Cha93) APT 5060

    APT 5060

    Abstract: No abstract text available
    Text: 2 2 3 3 1 1 7 22 OT 4 S 4 Parallel APT2X31S20J APT2X30/31S20J 200V 30A DUAL DIE ISOTOP PACKAGE HIGH VOLTAGE SCHOTTKY DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics


    Original     		PDF APT2X31S20J APT2X30/31S20J OT-227 APT 5060

    Untitled

    Abstract: No abstract text available
    Text: 2 2 3 1 1 3 4 SO 4 27 -T 2 Parallel APT2X31S20J APT2X31S20J 200V 45A DUAL DIE ISOTOP PACKAGE HIGH VOLTAGE SCHOTTKY DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics


    Original     		PDF APT2X31S20J OT-227 Speed187)

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF 10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


    Original     		PDF

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


    Original     		PDF des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit

    sot-227 footprint

    Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
    Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF

    SOT-227 lead frame

    Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series
    Text: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic


    Original     		PDF MIL-PRF-19500, sO-268 O-220 O-220 O-247 O-264 OT-227 SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


    Original     		PDF

    mj 1504 transistor equivalent

    Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
    Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as


    Original     		PDF

    APT100GF60LR

    Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
    Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of


    Original     		PDF

    APT2X30S20J

    Abstract: APT2X31S20J H100 APT 5060
    Text: 2 3 2 2 3 1 1 4 1 Anti-Parallel 3 7 22 OT 4 S 4 Parallel APT2X30/31S20J 200V 30A DUAL DIE ISOTOP PACKAGE HIGH VOLTAGE SCHOTTKY DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics


    Original     		PDF APT2X30/31S20J OT-227 APT2X30S20J APT2X31S20J APT2X30S20J APT2X31S20J H100 APT 5060