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    APT30GN60K Search Results

    APT30GN60K Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT30GN60KG Microsemi Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: TO-220; BV(CES) (V): 600; VCE(sat) (V): 1.5; IC (A): 30; Original PDF

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    ICE 280 565 smps

    Abstract: ICE 280 565 ICE 380 565 APT30GN60KG MIC4452 diode 30a 400v
    Text: TYPICAL PERFORMANCE CURVES APT30GN60K G 600V APT30GN60K APT30GN60KG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum


    Original
    PDF APT30GN60K APT30GN60K APT30GN60KG* O-220 ICE 280 565 smps ICE 280 565 ICE 380 565 APT30GN60KG MIC4452 diode 30a 400v

    ICE 280 565 smps

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT30GN60K G 600V APT30GN60K APT30GN60KG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum


    Original
    PDF APT30GN60K APT30GN60K APT30GN60KG* O-220 ICE 280 565 smps

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


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    PDF des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit