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    APT30GP60BD1 Datasheets (1)

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    APT30GP60BD1 Advanced Power Technology IGBT, Power IGBT, VCE 600 V, IC 100 A Original PDF

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    APT30GP60BD1

    Abstract: T0-247 30A 600V Ultrafast Diode APT TO-247 NS6006
    Text: APT30GP60BD1 600V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode


    Original     		PDF APT30GP60BD1 O-247 APT30GP60BD1 T0-247 30A 600V Ultrafast Diode APT TO-247 NS6006

    600 volt mosfet

    Abstract: 1200 volt mosfet TO247 package dissipation 125OC APT13GP120B APT13GP120K APT15GP60K APT35GP120B2D2 APT40GP60B2D1 MIL-PRF19500
    Text: Product Profile Advanced Power Technology New Power MOS 7 IGBTs for SMPS Applications 600 Volt Size 6 - APT40GP60B2D1 Product Description Higher Threshold Voltage and Reduced Ā“Miller CapacitanceĀ” - this provides for increased noise and spurious turn-on immunity and eliminates the


    Original     		PDF APT40GP60B2D1 O-247 APT25GP120B2D1 APT35GP120B2D2 APT45GP120B2D2 APT50GP60B2D2 APT65GP60L2D2 264-MAXTM 600 volt mosfet 1200 volt mosfet TO247 package dissipation 125OC APT13GP120B APT13GP120K APT15GP60K APT35GP120B2D2 APT40GP60B2D1 MIL-PRF19500