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    APT30M Price and Stock

    Microchip Technology Inc APT30M70BVRG

    MOSFET N-CH 300V 48A TO247
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    DigiKey APT30M70BVRG Tube 101 1
    • 1 $13.71
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    Mouser Electronics APT30M70BVRG 1,401
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    Microchip Technology Inc APT30M70BVRG Tube 26 Weeks
    • 1 $13.71
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    • 1000 $10.85
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    Onlinecomponents.com APT30M70BVRG
    • 1 -
    • 10 $13.25
    • 100 $11.24
    • 1000 $10.64
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    TME APT30M70BVRG 1
    • 1 $19.79
    • 10 $15.64
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    Richardson RFPD APT30M70BVRG 1
    • 1 $11.84
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    Avnet Silica APT30M70BVRG 28 Weeks 40
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    Master Electronics APT30M70BVRG
    • 1 -
    • 10 $13.25
    • 100 $11.24
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    Microchip Technology Inc APT30M85BVRG

    MOSFET N-CH 300V 40A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT30M85BVRG Tube 80 1
    • 1 $11.11
    • 10 $11.11
    • 100 $9.0125
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    Mouser Electronics APT30M85BVRG 1,730
    • 1 $11.11
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    • 100 $9.58
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    Onlinecomponents.com APT30M85BVRG
    • 1 -
    • 10 $10.76
    • 100 $9.24
    • 1000 $8.64
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    Richardson RFPD APT30M85BVRG 50
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    Avnet Silica APT30M85BVRG 28 Weeks 50
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    EBV Elektronik APT30M85BVRG 27 Weeks 50
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    Microchip Technology Inc APT30M60J

    MOSFET N-CH 600V 31A ISOTOP
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    DigiKey APT30M60J Tube 20
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    Avnet Americas APT30M60J Tube 26 Weeks 20
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    • 100 $22.25925
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    Newark APT30M60J Bulk 20
    • 1 $24.33
    • 10 $24.33
    • 100 $21.01
    • 1000 $19.75
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    NAC APT30M60J Tube 14
    • 1 $24.8
    • 10 $24.8
    • 100 $22.84
    • 1000 $21.17
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    Microchip Technology Inc APT30M30JLL

    MOSFET N-CH 300V 88A ISOTOP
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    DigiKey APT30M30JLL Tube 20
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    • 100 $40.12
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    Avnet Americas APT30M30JLL Tube 26 Weeks 20
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    • 100 $33.4035
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    Mouser Electronics APT30M30JLL 20
    • 1 $40.12
    • 10 $40.12
    • 100 $34.64
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    Verical APT30M30JLL 10 1
    • 1 $68.731
    • 10 $50.778
    • 100 $46.449
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    Newark APT30M30JLL Bulk 20
    • 1 $40.12
    • 10 $40.12
    • 100 $34.64
    • 1000 $32.56
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    Microchip Technology Inc APT30M30JLL Tube 26 Weeks
    • 1 $40.12
    • 10 $40.12
    • 100 $34.64
    • 1000 $31.79
    • 10000 $30.75
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    TME APT30M30JLL 1
    • 1 $57.99
    • 10 $46.11
    • 100 $46.11
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    NAC APT30M30JLL Tube 9
    • 1 $37.2
    • 10 $37.2
    • 100 $34.26
    • 1000 $31.76
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    Avnet Silica APT30M30JLL 28 Weeks 20
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    EBV Elektronik APT30M30JLL 27 Weeks 20
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    Master Electronics APT30M30JLL 10
    • 1 $52.87
    • 10 $39.06
    • 100 $35.73
    • 1000 $35.73
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    Microchip Technology Inc APT30M40JVR

    MOSFET N-CH 300V 70A ISOTOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT30M40JVR Tube 20
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    • 100 $35.9
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    Avnet Americas APT30M40JVR Tube 26 Weeks 20
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    • 100 $29.73314
    • 1000 $29.0335
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    Mouser Electronics APT30M40JVR
    • 1 $35.9
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    • 100 $31.02
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    Newark APT30M40JVR Bulk 20
    • 1 $35.9
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    • 100 $31.02
    • 1000 $29.15
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    Microchip Technology Inc APT30M40JVR Tube 26 Weeks
    • 1 $35.9
    • 10 $35.9
    • 100 $31.02
    • 1000 $28.45
    • 10000 $27.52
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    Onlinecomponents.com APT30M40JVR
    • 1 $34.29
    • 10 $31.04
    • 100 $28.36
    • 1000 $27.93
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    TME APT30M40JVR 1
    • 1 $51.92
    • 10 $41.29
    • 100 $41.29
    • 1000 $41.29
    • 10000 $41.29
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    NAC APT30M40JVR Tube 10
    • 1 $33.31
    • 10 $33.31
    • 100 $30.68
    • 1000 $28.44
    • 10000 $28.44
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    Richardson RFPD APT30M40JVR 20
    • 1 -
    • 10 -
    • 100 $30.8
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    Master Electronics APT30M40JVR
    • 1 $34.29
    • 10 $31.04
    • 100 $28.36
    • 1000 $27.93
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    APT30M Datasheets (91)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT30M17JFLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT30M17JFLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
    APT30M17JLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT30M17JLL Microsemi Power MOS 7 Low Loss MOSFET Original PDF
    APT30M19JVFR Advanced Power Technology FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 300V 130A SOT-227 Original PDF
    APT30M19JVFR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT30M19JVFR Cypress Semiconductor 64K x 24 Static RAM Module Original PDF
    APT30M19JVFR Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 300V 130A SOT-227 Original PDF
    APT30M19JVR Advanced Power Technology FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 300V 130A SOT-227 Original PDF
    APT30M19JVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT30M19JVR Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 300V 130A SOT-227 Original PDF
    APT30M30B2FLL Advanced Power Technology POWER MOS 7 R FREDFET Original PDF
    APT30M30B2FLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT30M30B2FLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
    APT30M30B2LL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT30M30B2LL Microsemi Power MOS 7 Low Loss MOSFET Original PDF
    APT30M30JFLL Advanced Power Technology POWER MOS 7 R FREDFET Original PDF
    APT30M30JFLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT30M30JFLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
    APT30M30JLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF

    APT30M Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: APT30M85SVR 40A 0.085Ω 300V POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.


    Original
    APT30M85SVR PDF

    APT30M30B2LL

    Abstract: APT30M30LLL
    Text: APT30M30B2LL APT30M30LLL 300V 100A 0.030Ω POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT30M30B2LL APT30M30LLL O-264 O-264 O-247 APT30M30B2LL APT30M30LLL PDF

    14240

    Abstract: fast diode SOT-227
    Text: APT30M17JFLL 0.017Ω 300V 135A POWER MOS 7TM FREDFET MAXIMUM RATINGS Symbol VDSS ID S S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original
    APT30M17JFLL OT-227 14240 fast diode SOT-227 PDF

    APT30M70BVR

    Abstract: No abstract text available
    Text: APT30M70BVR 48A 0.070Ω 300V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original
    APT30M70BVR O-247 O-247 APT30M70BVR PDF

    ad 3830

    Abstract: No abstract text available
    Text: APT30M61BFLL APT30M61SFLL 300V 54A 0.061Ω POWER MOS 7TM FREDFET BFLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original
    APT30M61BFLL APT30M61SFLL O-247 O-247 ad 3830 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT30M85BVFR 300V POWER MOS V 40A 0.085Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    APT30M85BVFR O-247 O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT30M75BLL APT30M75SLL 300V 44A 0.075W POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original
    APT30M75BLL APT30M75SLL O-247 O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT30M17JLL 300V 135A 0.017W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original
    APT30M17JLL OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT30M70SVR 48A 0.070Ω 300V POWER MOS V D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    APT30M70SVR APT30M70SVR PDF

    Untitled

    Abstract: No abstract text available
    Text: APT30M30JLL 88A 0.030Ω 300V R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT30M30JLL PDF

    APT30M85BVRG

    Abstract: No abstract text available
    Text: APT30M85BVR G *G Denotes RoHS Compliant, Pb Free Terminal Finish. 40A 0.085Ω 300V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    APT30M85BVR O-247 O-247 APT30M85BVRG PDF

    Untitled

    Abstract: No abstract text available
    Text: APT30M17JFLL 0.017Ω 300V 135A POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT30M17JFLL OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT30M70BVR APT30M70SVR 300V 0.070Ω Ω 48A POWER MOS V D3PAK TO-247 V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    APT30M70BVR APT30M70SVR O-247 O-247 APT30M70BVR PDF

    diode 88A

    Abstract: 88a diode and/kvp 88a
    Text: APT30M30JFLL 300V POWER MOS 7 R 0.030Ω 88A FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT30M30JFLL OT-227 diode 88A 88a diode and/kvp 88a PDF

    APT30M30B2FLL

    Abstract: APT30M30LFLL
    Text: APT30M30B2FLL APT30M30LFLL 300V 100A 0.030Ω POWER MOS 7 R FREDFET B2FLL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT30M30B2FLL APT30M30LFLL O-264 O-264 O-247 APT30M30B2FLL APT30M30LFLL PDF

    DIODE 76A

    Abstract: APT30M36JLL ISOTOP
    Text: APT30M36JLL 300V POWER MOS 7 R 76A 0.036Ω MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    APT30M36JLL OT-227 DIODE 76A APT30M36JLL ISOTOP PDF

    Untitled

    Abstract: No abstract text available
    Text: APT30M19JVFR A dvanced P o w er Te c h n o l o g y 300V POWER MOSV 130A 0.019CÌ iFREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan
    APT30M19JVFR OT-227 E145592 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT30M40JVR ADVANCED P ow er Te c h n o l o g y 300v 70a 0 .0 4 0 0 POWER MOS V Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan
    APT30M40JVR OT-227 E145592 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT30M85BVFR A dvanced P ow er T e c h n o lo g y 9 300V POWER MOSV 40A 0.085Q FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan
    APT30M85BVFR O-247 APT30M85BVFR PDF

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P ow er Te c h n o lo g y APT30M85BNFR APT3010BNFR GpWER MOS UM 300V 40A 300V 35A 0.085Q 0.100Q AVALANCHE RATED FREDFET N -C H A N N EL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan
    APT30M85BNFR APT3010BNFR APT30M85/301OBNFR O-247AD PDF

    IS-31

    Abstract: No abstract text available
    Text: A d v a n c ed P o w er Tec h n o lo g y 9 APT30M85BNFR APT301OBNFR 300V 40A 0.085Q 300V 35A 0.100Q FAST RECOVERY MOSFET FAMILY POWER MOS IVe N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS M AXIM UM RATING S Parameter APT30M85BNFR DSS Drain-Source Voltage


    OCR Scan
    APT30M85BNFR APT301OBNFR APT3010BNFR APT3010BNFR O-247AD IS-31 PDF

    APT30M19JVFR

    Abstract: No abstract text available
    Text: APT30M19JVFR ADVANCED POW ER Te c h n o l o g y POWER MOSV 300V 130A 0.0190 FREDFET Power MOSV® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan
    APT30M19JVFR OT-227 APT30M19JVFR E145592 PDF

    Untitled

    Abstract: No abstract text available
    Text: A dvanced APT30M85BVR pow er Te c h n o lo g y 300V 40A 0.085Q POWER MOSV Power MOS V is a newgeneration of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan
    APT30M85BVR O-247 019i522 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT30M85BVFR A dvanced po w er Te c h n o l o g y POWER MOS V‘ 300V 40A 0.085Í2 FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan
    APT30M85BVFR O-247 APT30M85BVFR PDF