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    APT45GP120JDF2 Search Results

    APT45GP120JDF2 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT45GP120JDF2 Advanced Power Technology POWER MOS 7 IGBT Original PDF
    APT45GP120JDF2 Unknown High Voltage, 1200V 75A, IGBT N-Type Original PDF

    APT45GP120JDF2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IC 7432

    Abstract: Datasheet of IC 7432 data sheet IC 7432 IC 7432 DATASHEET 7432 7432 ic 78 MOS 7432 or gate ic IC 7432 DATASHEETS or ic 7432
    Text: APT45GP120JDF2 1200V E E POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original
    PDF APT45GP120JDF2 IC 7432 Datasheet of IC 7432 data sheet IC 7432 IC 7432 DATASHEET 7432 7432 ic 78 MOS 7432 or gate ic IC 7432 DATASHEETS or ic 7432

    UJ 45A diode

    Abstract: No abstract text available
    Text: APT45GP120JDF2 1200V E E POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original
    PDF APT45GP120JDF2 APT45 UJ 45A diode

    APT30DF120

    Abstract: No abstract text available
    Text: APT45GP120JDF2 1200V E E POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original
    PDF APT45GP120JDF2 APT45 APT30DF120

    30 mhz power IGBT

    Abstract: No abstract text available
    Text: APT45GP120JDF2 1200V E E POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original
    PDF APT45GP120JDF2 APT45ction MIL-STD-750 30 mhz power IGBT

    ic 7432

    Abstract: IC 7432 DATASHEET 7432 or gate ic data sheet IC 7432 7432 Datasheet of IC 7432 7432 ic IC 7432 data sheet 7432 ic data sheet IC 7432 DATASHEETS
    Text: APT45GP120JDF2 TYPICAL PERFORMANCE CURVES APT45GP120JDF2 1200V The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original
    PDF APT45GP120JDF2 ic 7432 IC 7432 DATASHEET 7432 or gate ic data sheet IC 7432 7432 Datasheet of IC 7432 7432 ic IC 7432 data sheet 7432 ic data sheet IC 7432 DATASHEETS

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


    Original
    PDF

    225A2

    Abstract: No abstract text available
    Text: APT45GP120J 1200V E E POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original
    PDF APT45GP120J APT45GP1) 225A2

    APT100GF60LR

    Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
    Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of


    Original
    PDF