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Microchip Technology Inc APT5020BVFRG MOSFET N-CH 500V 26A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT5020BVFRG	Tube	695		1	1 $10.61 10 $10.61 100 $8.6125 1000 $8.6125 10000 $8.6125	Buy Now
Mouser Electronics	APT5020BVFRG		1,256			1 $10.21 10 $10.21 100 $8.61 1000 $8.61 10000 $8.61	Buy Now
Onlinecomponents.com	APT5020BVFRG		200			1 - 10 $9.94 100 $8.64 1000 $8.1 10000 $8.1	Buy Now
Ameya Holding Limited	APT5020BVFRG		737			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Microchip Technology Inc APT5017BVRG MOSFET N-CH 500V 30A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT5017BVRG	Tube	243		1	1 $12.33 10 $12.33 100 $10 1000 $10 10000 $10	Buy Now
Newark	APT5017BVRG	Bulk			50	1 $12.33 10 $12.33 100 $10.63 1000 $10.01 10000 $10.01	Buy Now
TME	APT5017BVRG				1	1 $18.3 10 $15.45 100 $15.45 1000 $15.45 10000 $15.45	Get Quote
NAC	APT5017BVRG	Tube			31	1 $11.76 10 $11.76 100 $10.67 1000 $9.76 10000 $9.76	Buy Now
Richardson RFPD	APT5017BVRG				1	1 $7.96 10 $7.96 100 $7.66 1000 $7.66 10000 $7.66	Buy Now

Master Electronics	APT5017BVRG					1 - 10 $11.94 100 $10.13 1000 $9.58 10000 $9.58	Buy Now
Microchip Technology Inc APT50GT120B2RG IGBT NPT 1200V 94A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT50GT120B2RG	Tube	228		1	1 $16.44 10 $16.44 100 $9.84 1000 $9.84 10000 $9.84	Buy Now
Microchip Technology Inc APT5014BLLG MOSFET N-CH 500V 35A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT5014BLLG	Tube	41		1	1 $14.9 10 $14.9 100 $12.0875 1000 $12.0875 10000 $12.0875	Buy Now
Mouser Electronics	APT5014BLLG		176			1 $14.9 10 $14.9 100 $12.87 1000 $12.87 10000 $12.87	Buy Now
TME	APT5014BLLG				1	1 $21.55 10 $17.04 100 $17.04 1000 $17.04 10000 $17.04	Get Quote
Microchip Technology Inc APT5015BVFRG MOSFET N-CH 500V 32A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT5015BVFRG	Tube	40		1	1 $13.36 10 $13.36 100 $10.8375 1000 $10.8375 10000 $10.8375	Buy Now
Avnet Americas	APT5015BVFRG	Tube	78	32 Weeks	1	1 $13.2264 10 $11.57451 100 $10.79419 1000 $10.79419 10000 $10.79419	Buy Now
Master Electronics	APT5015BVFRG					1 - 10 $12.94 100 $10.97 1000 $10.38 10000 $10.38	Buy Now
New Advantage Corporation	APT5015BVFRG		150		1	1 - 10 - 100 $16.01 1000 $14.95 10000 $14.95	Buy Now

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APT50 Datasheets (433)

Part	Manufacturer	Description	Datasheet Type	PDF
APT5010B2	Advanced Power Technology	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.	Original	PDF
APT5010B2FLL	Advanced Power Technology	POWER MOS 7 500V 46A 0.100 Ohm	Original	PDF
APT5010B2FLL	Advanced Power Technology	N-Channel enhancement mode power MOSFET	Original	PDF
APT5010B2FLL	Microsemi	Power MOS 7 Low Loss FREDFET	Original	PDF
APT5010B2FLLG	Advanced Power Technology	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 46A T-MAX	Original	PDF
APT5010B2FLLG	Microsemi	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 46A T-MAX	Original	PDF
APT5010B2L	Advanced Power Technology	500V 46A 0.100Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET	Original	PDF
APT5010B2LC	Advanced Power Technology	N-Channel enhancement mode power MOSFET	Original	PDF
APT5010B2LC	Advanced Power Technology	POWER MOS VI 500V 47A 0.100 Ohm	Original	PDF
APT5010B2LL	Advanced Power Technology	POWER MOS 7 500V 46A 0.100 Ohm	Original	PDF
APT5010B2LL	Microsemi	Power MOS 7 Low Loss MOSFET	Original	PDF
APT5010B2LLG	Microsemi	Power MOSFET; Package: T-MAX [B2]; ID (A): 46; RDS(on) (Ohms): 0.1; BVDSS (V): 500;	Original	PDF
APT5010B2VFR	Advanced Power Technology	High voltage N-Channel enhancement mode power MOSFET	Original	PDF
APT5010B2VR	Advanced Power Technology	N-Channel enhancement mode power MOSFET	Original	PDF

APT5010B2VRG	Microchip Technology	MOSFET N-CH 500V 47A T-MAX	Original	PDF
APT5010JFLL	Advanced Power Technology	POWER MOS 7 500V 44A 0.100 Ohm	Original	PDF
APT5010JFLL	Advanced Power Technology	N-Channel enhancement mode power MOSFET	Original	PDF
APT5010JFLL	Microsemi	Power MOS 7 Low Loss FREDFET	Original	PDF
APT5010JLC	Advanced Power Technology	POWER MOS VI 500V 44A 0.100 Ohm	Original	PDF
APT5010JLL	Advanced Power Technology	POWER MOS 7 500V 44A 0.100 Ohm	Original	PDF

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APT50 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
APT50DL60BCT Abstract: TO247 5134 D3PAK Text: APT50DL60BCT G 600V 50A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)	Original	APT50DL60BCT O-247 TO247 5134 D3PAK	PDF
transistors mj 1504 Abstract: Mosfet 600V, 20A diode schottky 600v infineon 20A 1,0V ISOTOP Text: APT50N60JCCU2 ISOTOP Boost chopper VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 50A @ Tc = 25°C Super Junction MOSFET Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch K	Original	APT50N60JCCU2 transistors mj 1504 Mosfet 600V, 20A diode schottky 600v infineon 20A 1,0V ISOTOP	PDF
APT50M75JLLU3 Abstract: mosfet 600V 30A Text: APT50M75JLLU3 ISOTOP Buck chopper MOSFET Power Module D Application • AC and DC motor control • Switched Mode Power Supplies G S A A S D G VDSS = 500V RDSon = 75mΩ max @ Tj = 25°C ID = 51A @ Tc = 25°C Features • Power MOS 7® MOSFETs - Low RDSon	Original	APT50M75JLLU3 OT-227) APT50M75JLLU3 mosfet 600V 30A	PDF
Untitled Abstract: No abstract text available Text: APT50GT120B2R G APT50GT120LR(G) 1200V, 50A, VCE(ON) = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.	Original	APT50GT120B2R APT50GT120LR 50KHz	PDF
APT5015BLC Abstract: No abstract text available Text: APT5015BLC 500V 32A 0.150 W POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,	Original	APT5015BLC O-247 O-247 APT5015BLC	PDF
APT5017 Abstract: APT5017BLC APT5017SLC Text: APT5017BLC APT5017SLC 500V 30A 0.170W BLC POWER MOS VITM D3PAK Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.	Original	APT5017BLC APT5017SLC O-247 O-247 APT5017 APT5017 APT5017BLC APT5017SLC	PDF
APT5014 Abstract: APT5014B2LC APT5014LLC Text: APT5014B2LC APT5014LLC 500V 37A 0.140W B2LC POWER MOS VITM T-MAX Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.	Original	APT5014B2LC APT5014LLC O-264 O-264 APT5014 O-247 APT5014 APT5014B2LC APT5014LLC	PDF
Untitled Abstract: No abstract text available Text: APT50SM120B_S APT50SM120B APT50SM120S 1200V, 50A, 50mΩ Silicon Carbide Power MOSFET TO -24 7 D 3 PAK TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI/RFI • PFC and other boost converter • Low Switching Energy • Buck converter • Low RDS on Temperature Coefficient For	Original	APT50SM120B APT50SM120S	PDF
Untitled Abstract: No abstract text available Text: APT5024BVFR 500V POWER MOS V 22A 0.240Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT5024BVFR O-247 O-247 APT5024BVR	PDF
APT5010LVR Abstract: apt5010l Text: APT5010LVR 500V 47A 0.100Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.	Original	APT5010LVR O-264 O-264 APT5010LVR apt5010l	PDF
5622 Abstract: No abstract text available Text: APT5014B2VR 37A 0.140Ω 500V POWER MOS V T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT5014B2VR O-247 5622	PDF
APT50M80B2VFR Abstract: ED 58A Text: APT50M80B2VFR 500V POWER MOS V 58A 0.080W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT50M80B2VFR Current031) MIL-STD-750 APT50M80B2VFR ED 58A	PDF
Untitled Abstract: No abstract text available Text: 'A D VAN C ED POWER TECHNOLOGY Tfl dF J o S S T IQ I DQQDQm 7 " \ 3 ? - AS For Additional Information Contact APT Sales Representatives Or The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS APT1001R2DN APT901RDN APT8090DN APT6040DN APT5532DN APT5030DN APT4530DN	OCR Scan	APT1001R2DN APT901RDN APT8090DN APT6040DN APT5532DN APT5030DN APT4530DN APT4025DN APT10050EN APT10060EN	PDF
Untitled Abstract: No abstract text available Text: APT5014LVR A dvanced P o w er Te c h n o l o g y 500V 37A 0.140n POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™	OCR Scan	APT5014LVR O-264 O-264AA	PDF

Untitled Abstract: No abstract text available Text: ADVANCED POWER TECHNOLOGY b3E Í • GSSTTDT GG01132 SST HAVP A d van ced PO W ER Te c h n o l o g y APT5040BNF 500V 16A 0.40Í2 APT5050BNF 500V 14A 0.50Í2 POWER MOS IV< FAST RECOVERY MOSFET FAMILY N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS	OCR Scan	GG01132 APT5040BNF APT5050BNF 5040BNF 5050BNF O-247AD	PDF
Untitled Abstract: No abstract text available Text: APT5024BVR A dvanced P o w er Te c h n o l o g y 500V 22A 0.240Í1 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V	OCR Scan	APT5024BVR O-247 O-247AD	PDF
Untitled Abstract: No abstract text available Text: ADVANCED POWE R TECHNOLOGY b3E I I S/D JJ5J I A dvanced P ow er Te c h n o lo g y OD M m OSSTiOl DDOllDt APT5020HJN 500V 28.0A 0.200 ^ V ' U L Recognized" File No. E145592 S ISOTOP® POWER MOS IV HALF-BRIDGE ISOTOP PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	OCR Scan	APT5020HJN E145592 S020HJN OT-227	PDF
Untitled Abstract: No abstract text available Text: A dvanced P o w er Te c h n o lo g y * APT5012JNU2 500V 43A 0.12Q o* £ 5% ISOTOP* POWER MOS IV' Single Die MOSFET and UltraFast Diode For "PFC Boost Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.	OCR Scan	APT5012JNU2 5012JNU2 OT-227 Page68	PDF
Untitled Abstract: No abstract text available Text: O A dvanced P ow er T e c h n o lo g y 9 D APT5027SNR Os POWER MOS IV 500V 20.0A 0.27U AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS *D A ll R a tin g s: T c = 2 5 °C u n le ss o th e rw ise sp e cifie d .	OCR Scan	APT5027SNR 100mS	PDF
Untitled Abstract: No abstract text available Text: FM j •R AD VA NC ED po w er T e c h n o lo g y APT5010JN APT5012JN ISOTOP' 500V 500V 48.0A 0.10Í2 43.0A 0.12Í2 S Ù " U L Recognized" File No. E145592 S POWER MOS IV SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	OCR Scan	APT5010JN APT5012JN E145592 5010JN 5012JN APT5010/5012JN OT-227	PDF
Untitled Abstract: No abstract text available Text: A dvanced P o w er Te c h n o l o g y O D O a APT5012JNU3 Os ISOTOP® P O W E R M O S IV< 500V 43A 0.12Í2 Single Die MOSFET and UltraFast Diode For "PFC Buck Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd	OCR Scan	APT5012JNU3 5012JNU3	PDF
APT5040BNFR Abstract: No abstract text available Text: ADVANCED PO W ER Te c h n o l o g y * APT5040BNFR APT5050BNFR POWER MOS IV« 500V 500V 16A 0.40Ü 14A 0.500 AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.	OCR Scan	APT5040BNFR APT5050BNFR 00A/ns) APT5040BNFR	PDF
APT5027BVR Abstract: No abstract text available Text: APT5027BVR r A D VA N C ED • W A P o w er M Te c h n o lo g y * soov 2oa 0.270Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V	OCR Scan	APT5027BVR O-247 100Wjis) MIL-STD-750 O-247AD APT5027BVR	PDF
Untitled Abstract: No abstract text available Text: A D V A N C E D PO WE R T E C H N O L O G Y blE D • 0257^0=1 0 0 0 0 0 5 4 bTI H A V P ■ r W /jA A dvanced pow er Te c h n o l o g y APT50GL60BN 600V 50A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR	OCR Scan	APT50GL60BN	PDF

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APT50 Price and Stock

Microchip Technology Inc APT5020BVFRG

Microchip Technology Inc APT5017BVRG

Microchip Technology Inc APT50GT120B2RG

Microchip Technology Inc APT5014BLLG

Microchip Technology Inc APT5015BVFRG

APT50 Datasheets (433)

APT50 Datasheets Context Search

APT50DL60BCT

transistors mj 1504

APT50M75JLLU3

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APT5015BLC

APT5017

APT5014

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APT5010LVR

5622

APT50M80B2VFR

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APT5040BNFR

APT5027BVR

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