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    APT5014 Price and Stock

    Microchip Technology Inc APT5014BLLG

    MOSFET N-CH 500V 35A TO247
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    DigiKey APT5014BLLG Tube 41 1
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    Microchip Technology Inc APT5014BLLG Tube 26 Weeks
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    Onlinecomponents.com APT5014BLLG
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    TME APT5014BLLG 1
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    NAC APT5014BLLG Tube 25
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    Richardson RFPD APT5014BLLG 1
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    Microchip Technology Inc APT5014SLLG

    MOSFET N-CH 500V 35A D3PAK
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    DigiKey APT5014SLLG Tube 40
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    Mouser Electronics APT5014SLLG
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    Newark APT5014SLLG Bulk 40
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    Microchip Technology Inc APT5014SLLG Tube 26 Weeks
    • 1 $15.95
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    Onlinecomponents.com APT5014SLLG
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    TME APT5014SLLG 1
    • 1 $23.1
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    NAC APT5014SLLG Tube 24
    • 1 $14.81
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    Avnet Silica APT5014SLLG 28 Weeks 40
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    Master Electronics APT5014SLLG
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    New Advantage Corporation APT5014SLLG 300 1
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    Microchip Technology Inc APT5014B2VRG

    MOSFET N-CH 500V T-MAX
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    Microchip Technology Inc APT5014BFLLG

    MOSFET N-CH 500V 35A TO247
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    DigiKey APT5014BFLLG Tube 40
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    Avnet Americas APT5014BFLLG Tube 32 Weeks 40
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    Mouser Electronics APT5014BFLLG
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    Newark APT5014BFLLG Bulk 40
    • 1 $14.2
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    Microchip Technology Inc APT5014BFLLG Tube 32 Weeks
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    Onlinecomponents.com APT5014BFLLG
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    TME APT5014BFLLG 1
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    NAC APT5014BFLLG Tube 27
    • 1 $13.56
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    Master Electronics APT5014BFLLG
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    Microchip Technology Inc APT5014SLLG-TR

    MOSFET N-CH 500V 35A TO247
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    DigiKey APT5014SLLG-TR Reel 13
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    Find more APT5014 price and stock on Findchips.com

    APT5014 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT5014 Advanced Power Technology Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS Original PDF
    APT5014B2FLC Advanced Power Technology POWER MOS VI FREDFET Original PDF
    APT5014B2LC Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5014B2VFR Advanced Power Technology POWER MOS V FREDFET Original PDF
    APT5014B2VR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5014BFLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5014BFLL Advanced Power Technology POWER MOS 7 500V 35A 0.140 Ohm Original PDF
    APT5014BFLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
    APT5014BFLLG Microchip Technology MOSFET N-CH 500V 35A TO247 Original PDF
    APT5014BLL Advanced Power Technology POWER MOS 7 500V 35A 0.140 Ohm Original PDF
    APT5014BLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5014BLL Microsemi Power MOS 7 Low Loss MOSFET Original PDF
    APT5014BLLG Microsemi Power MOSFET; Package: TO-247 [B]; ID (A): 35; RDS(on) (Ohms): 0.14; BVDSS (V): 500; Original PDF
    APT5014LFLC Advanced Power Technology POWER MOS VI FREDFET Original PDF
    APT5014LLC Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5014LVFR Microsemi Power MOS V FREDFET Original PDF
    APT5014LVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5014SFLL Advanced Power Technology POWER MOS 7 500V 35A 0.140 Ohm Original PDF
    APT5014SFLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5014SFLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF

    APT5014 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    APT5014

    Abstract: APT5014B2LC APT5014LLC
    Text: APT5014B2LC APT5014LLC 500V 37A 0.140W B2LC POWER MOS VITM T-MAX Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.


    Original     		APT5014B2LC APT5014LLC O-264 O-264 APT5014 O-247 APT5014 APT5014B2LC APT5014LLC PDF

    5622

    Abstract: No abstract text available
    Text: APT5014B2VR 37A 0.140Ω 500V POWER MOS V T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT5014B2VR O-247 5622 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT5014BLL APT5014SLL 500V 35A 0.140W POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		APT5014BLL APT5014SLL O-247 O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT5014BLL APT5014SLL 500V 35A 0.140Ω R POWER MOS 7 MOSFET D3PAK TO-247 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT5014BLL APT5014SLL O-247 O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT5014LVR 500V 37A 0.140Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original     		APT5014LVR O-264 O-264 PDF

    APT5014LVR

    Abstract: No abstract text available
    Text: APT5014LVR 500V 37A 0.140Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original     		APT5014LVR O-264 O-264 APT5014LVR PDF

    25C2335

    Abstract: No abstract text available
    Text: APT5014BFLL APT5014SFLL 500V 35A 0.140W POWER MOS 7TM FREDFET BFLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		APT5014BFLL APT5014SFLL O-247 O-247 Ratin81 25C2335 PDF

    APT5014B2VFR

    Abstract: APT5014LVFR
    Text: APT5014B2VFR APT5014LVFR 500V POWER MOS V FREDFET 37A 0.140Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT5014B2VFR APT5014LVFR O-264 O-264 APT5014B2VFR O-247 APT5014LVFR PDF

    Untitled

    Abstract: No abstract text available
    Text: APT5014B2VFR APT5014LVFR 37A 0.140Ω 500V POWER MOS V FREDFET B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT5014B2VFR APT5014LVFR O-264 O-264 APT5014B2VFR O-247 PDF

    APT5014

    Abstract: APT5014BLL APT5014SLL
    Text: APT5014BLL APT5014SLL 500V 35A 0.140W POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		APT5014BLL APT5014SLL O-247 O-247 APT5014 APT5014BLL APT5014SLL PDF

    APT5014

    Abstract: APT5014BFLL APT5014SFLL
    Text: APT5014BFLL APT5014SFLL 500V 35A 0.140W POWER MOS 7TM FREDFET BFLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		APT5014BFLL APT5014SFLL O-247 O-247 APT5014 APT5014BFLL APT5014SFLL PDF

    319f

    Abstract: apt5014 APT5014BLL APT5014SLL
    Text: APT5014BLL APT5014SLL 500V 35A 0.140Ω POWER MOS 7 R MOSFET D3PAK TO-247 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT5014BLL APT5014SLL O-247 O-247 Paramet78 319f apt5014 APT5014BLL APT5014SLL PDF

    Untitled

    Abstract: No abstract text available
    Text: APT5014BFLL APT5014SFLL 500V 32A 0.140W POWER MOS 7TM FREDFET BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		APT5014BFLL APT5014SFLL O-247 O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT5014BFLL APT5014SFLL 500V 35A 0.140Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT5014BFLL APT5014SFLL O-247 O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT5014BFLL APT5014SFLL 500V 35A 0.140Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT5014BFLL APT5014SFLL O-247 O-247 PDF

    c 525 q

    Abstract: APT5014 APT5014B2FLC APT5014LFLC
    Text: APT5014B2FLC APT5014LFLC 500V 37A 0.140W POWER MOS VITM FREDFET B2FLC Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.


    Original     		APT5014B2FLC APT5014LFLC O-264 O-264 APT5014 MIL-STD-750 c 525 q APT5014 APT5014B2FLC APT5014LFLC PDF

    APT30DF60

    Abstract: APT5014BFLL 319F APT5014SFLL
    Text: APT5014BFLL APT5014SFLL 500V 35A 0.140Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT5014BFLL APT5014SFLL O-247 O-247 APT30DF60 APT5014BFLL 319F APT5014SFLL PDF

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter PDF

    Untitled

    Abstract: No abstract text available
    Text: APT5014LVR A dvanced P o w er Te c h n o l o g y 500V 37A 0.140n POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		APT5014LVR O-264 O-264AA PDF

    Untitled

    Abstract: No abstract text available
    Text: APT5014B2VR A d v a n ced W /Æ P o w e r Tec h n o lo g y • R soov 37a o.i4oq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		APT5014B2VR O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT5014LVR A dvanced P o w er Te c h n o l o g y 500V 37A 0.140Q POWER MOS V‘ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		APT5014LVR O-264 APT5014LVR PDF

    APT5014LVR

    Abstract: No abstract text available
    Text: APT5014LVR A d v a n ced W /Æ P o w e r Tec h n o lo g y • R soov 37a o.i4oq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		APT5014LVR O-264 APT5014LVR PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED POWER Tec h n o lo g y APT5014LVR soov 37a o.i4on POWER MOS V Power MOS V™ is a new generation of high voltage N-Channe! enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		APT5014LVR O-264 00A/ps) MIL-STD-750 O-264AA PDF

    nt 6600 G

    Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
    Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700


    OCR Scan     		APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr PDF