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    APT60M Price and Stock

    Microchip Technology Inc APT60M75L2LLG

    MOSFET N-CH 600V 73A 264 MAX
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    DigiKey APT60M75L2LLG Tube 210 1
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    Microchip Technology Inc APT60M75L2FLLG

    MOSFET N-CH 600V 73A 264 MAX
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    DigiKey APT60M75L2FLLG Tube 82 1
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    Newark APT60M75L2FLLG Bulk 25
    • 1 $50.64
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    • 1 $50.64
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    NAC APT60M75L2FLLG Tube 7
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    Microchip Technology Inc APT60M60JLL

    MOSFET N-CH 600V 70A ISOTOP
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    DigiKey APT60M60JLL Tube 10 1
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    Microchip Technology Inc APT60M60JLL Tube 26 Weeks
    • 1 $94.75
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    Onlinecomponents.com APT60M60JLL
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    TME APT60M60JLL 1
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    NAC APT60M60JLL Tube 4
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    Microchip Technology Inc APT60M60JFLL

    MOSFET N-CH 600V 70A ISOTOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT60M60JFLL Tube 10 1
    • 1 $96.63
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    Avnet Americas APT60M60JFLL Tube 32 Weeks 10
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    Mouser Electronics APT60M60JFLL
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    Newark APT60M60JFLL Bulk 10
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    Microchip Technology Inc APT60M60JFLL Tube 32 Weeks
    • 1 $96.63
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    Onlinecomponents.com APT60M60JFLL
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    NAC APT60M60JFLL Tube 3
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    Microchip Technology Inc APT60M75JVR

    MOSFET N-CH 600V 62A ISOTOP
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    DigiKey APT60M75JVR Tube 10
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    NAC APT60M75JVR Tube 4
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    APT60M Datasheets (31)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT60M60JFLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT60M60JFLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
    APT60M60JLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT60M60JLL Microsemi Power MOS 7 Low Loss MOSFET Original PDF
    APT60M75 Advanced Power Technology Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Original PDF
    APT60M75JFLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT60M75JFLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
    APT60M75JLL Advanced Power Technology POWER MOS 7 600V 58A 0.075 Ohm Original PDF
    APT60M75JLL Microsemi Power MOS 7 Low Loss MOSFET Original PDF
    APT60M75JVFR Advanced Power Technology POWER MOS V FREDFET Original PDF
    APT60M75JVFR Advanced Power Technology FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 600V 62A SOT-227 Original PDF
    APT60M75JVFR Unknown Power MOS V, 600V 62A, MOS-FET N-Channel enhanced Original PDF
    APT60M75JVR Microsemi Power MOS V MOSFET Original PDF
    APT60M75L2FLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT60M75L2FLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
    APT60M75L2FLLG Advanced Power Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 73A TO-264MAX Original PDF
    APT60M75L2FLLG Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 73A TO-264MAX Original PDF
    APT60M75L2LL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT60M75L2LL Microsemi Power MOS 7 Low Loss MOSFET Original PDF
    APT60M75L2LLG Advanced Power Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 73A TO-264MAX Original PDF

    APT60M Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: APT60M75JFLL 600V POWER MOS 7 R 58A FREDFET 0.075Ω S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT60M75JFLL OT-227 PDF

    fast diode SOT-227

    Abstract: C5198
    Text: APT60M75JFLL 600V POWER MOS 7TM FREDFET Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS S S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel


    Original     		APT60M75JFLL OT-227 fast diode SOT-227 C5198 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT60M60JFLL 600V 70A 0.060Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT60M60JFLL OT-227 PDF

    400V 70A power mosfet

    Abstract: No abstract text available
    Text: APT60M60JLL 800V 70A 0.060Ω POWER MOS 7 R S S MOSFET 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT60M60JLL OT-227 400V 70A power mosfet PDF

    DIODE 248

    Abstract: No abstract text available
    Text: APT60M75JVR 62A 0.075Ω 600V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT60M75JVR OT-227 E145592 DIODE 248 PDF

    605A

    Abstract: No abstract text available
    Text: APT60M75PVR 600V 60.5A 0.075Ω POWER MOS V P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also


    Original     		APT60M75PVR 605A PDF

    l 7251

    Abstract: l 7251 3.1
    Text: APT60M80JVR 600V 55A 0.080Ω POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT60M80JVR OT-227 l 7251 l 7251 3.1 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT60M75JVFR 600V Ω 62A 0.075Ω POWER MOS V FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT60M75JVFR OT-227 APT60M75JVFR E145592 PDF

    APT60M75JVFR

    Abstract: No abstract text available
    Text: APT60M75JVFR 600V Ω 0.075Ω 62A POWER MOS V FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT60M75JVFR OT-227 E145592 APT60M75JVFR PDF

    Untitled

    Abstract: No abstract text available
    Text: APT60M75PVR W 600V 60.5A 0.075W POWER MOS V P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also


    Original     		APT60M75PVR PDF

    AL 1450 DV

    Abstract: No abstract text available
    Text: APT60M80L2VR 600V 65A 0.080W POWER MOS V TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT60M80L2VR O-264 O-264 AL 1450 DV PDF

    APT60M75L2FLL

    Abstract: No abstract text available
    Text: APT60M75L2FLL 600V 73A 0.075Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT60M75L2FLL O-264 APT60M75L2FLL PDF

    Untitled

    Abstract: No abstract text available
    Text: APT60M75L2LL 600V 73A 0.075Ω POWER MOS 7 R MOSFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT60M75L2LL O-264 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT60M75JLL 600V 58A 0.075W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original     		APT60M75JLL OT-227 PDF

    power mosfet 600v 29a

    Abstract: No abstract text available
    Text: APT60M75JLL 600V 58A 0.075Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT60M75JLL OT-227 power mosfet 600v 29a PDF

    APT60M75L2LL

    Abstract: 0236f
    Text: APT60M75L2LL 600V 73A 0.075Ω POWER MOS 7 R MOSFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT60M75L2LL O-264 O-264 APT60M75L2LL 0236f PDF

    Untitled

    Abstract: No abstract text available
    Text: APT60M80L2VR 600V 65A 0.080Ω POWER MOS V MOSFET L2VR TO-264 Max V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT60M80L2VR O-264 O-264 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT60M80L2VR 600V 65A 0.080Ω POWER MOS V MOSFET L2VR TO-264 Max V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT60M80L2VR O-264 O-264 PDF

    APT55M90BFN

    Abstract: APT60M90BFN PD10
    Text: ADVANCFD POWER TECHN^0L0^6Y 4 CIE IÂVP □ 257^ 0^ 00005*10 117 1> ADVANCED OD 4 'T -S fl-is PO W ER Tec h n o lo g y APT60M90BFN 600V 63.0A 0.090 APT55M90BFN 550V 63.0A 0.090 OS<4)* a POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFElTS


    OCR Scan     		APT60M90BFN APT55M90BFN 00A/ps) MIL-STD-750 PD10 PDF

    h48 diode SPECIFICATIONS

    Abstract: DIODE 248
    Text: • R ADVANCED r M po w er Tec h n o lo g y APT60M75JVR 6oov 62a 0.075Q POWER MOS V P ow er M OS V is a new generation o f high voltage N -C hannel enhancem ent m ode pow er M O S FE Ts. This new technolo gy m inim izes the JF E T effect, increases packing d ensity and reduces the on-resistance. Power M OS V®


    OCR Scan     		APT60M75JVR OT-227 APT60M75JVR Con04) E145592 h48 diode SPECIFICATIONS DIODE 248 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCFD POWER TECHNOLOGY 4TE 0257101 D 0 0 0 0 5 *1 0 ADVANCED P o w er t s a - is Te c h n o lo g y QD 4 - OS(4) IAVP 117 - APT60M90BFN 600V 63.0A 0.090 i APT55M90BFN 550V 63.0A 0.090 1a7 POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFElfS


    OCR Scan     		APT60M90BFN APT55M90BFN eC830 MIL-STD-750 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT60M75JVR A dvanced P o w er Te c h n o l o g y 600V 62A 0.075Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		APT60M75JVR OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P ow er Te c h n o lo g y APT60M90JN 600V 57A 0.090Í2 S Û "UL Recognized" File No. E145592 S ISOTOP POWER MOS IV* SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		APT60M90JN E145592 60M90JN OT-227 PDF

    LG 57A

    Abstract: 378r
    Text: A dvanced P o w er T e c h n o l o g yr Q D APT60M90JN 600V 57A 0.0900 "UL Recognized" File No. E145592 S ISOTOP* POWER MOS IVe N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		APT60M90JN E145592 60M90JN APT60M90JN OT-227 LG 57A 378r PDF