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    Untitled

    Abstract: No abstract text available
    Text: APT65GL100BN Transistors N-Channel IGBT V BR CES (V)1k V(BR)GES (V)20 I(C) Max. (A)65 Absolute Max. Power Diss. (W)245 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case.51 Thermal Resistance Junc-Amb.40 g(fe) Min. (S) Trans. admitt.


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    PDF APT65GL100BN delay40n time130n time675n

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


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    PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    APT POWER FET

    Abstract: APT110GF60JN APT65GL100BN APT25GF100BN APT30GF60BN APT45GL100BN IGBT SCHEMATIC IGBT 1500 volts APT35GL60BN IGBT 1000 VOLTS TO 1500 VOLTS
    Text: APT IGBT PRODUCTS BVces V ce ON lc,(25C ) lC2(90°C) tf(IND@125 C) Pd APT New Product Volts Volts Amps Amps nsec Watts Part No. Comments LOW CONDUCTION LOSS IGBT PRODUCT FAMILY 1000 2.8 3.0 3.0 65 45 30 35 25 17 1500 1500 1500 260 200 147 APT65GL100BN APT45GL100BN


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    PDF APT65GL100BN APT45GL100BN APT30GL100BN APT75GL60BN APT50GL60BN APT35GL60BN APT50GF100BN APT40GF100BN APT25GF100BN APT55GF60BN APT POWER FET APT110GF60JN APT25GF100BN APT30GF60BN IGBT SCHEMATIC IGBT 1500 volts IGBT 1000 VOLTS TO 1500 VOLTS

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED POUER TECHNOLOGY b lE D Q R S 7 W ] 0GG0Û7G Ô41 « A V P • A dvanced P o w er Te c h n o l o g y APT65GL100BN 1000V 65A POWER MOS IV IGBT N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol


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    PDF APT65GL100BN