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    Microchip Technology Inc APT65GP60B2G

    IGBT PT 600V 100A
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    DigiKey APT65GP60B2G Tube 115 1
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    Avnet Americas APT65GP60B2G Tube 26 Weeks 30
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    Mouser Electronics APT65GP60B2G 7
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    Newark APT65GP60B2G Bulk 30
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    Microchip Technology Inc APT65GP60B2G
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    Onlinecomponents.com APT65GP60B2G
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    TME APT65GP60B2G 1
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    NAC APT65GP60B2G Tube 21
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    Master Electronics APT65GP60B2G
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    APT65GP60B2 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT65GP60B2 Advanced Power Technology POWER MOS 7 IGBT Original PDF
    APT65GP60B2G Advanced Power Technology IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 100A 833W TMAX Original PDF
    APT65GP60B2G Microsemi Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 100A 833W TMAX Original PDF

    APT65GP60B2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IC 7438 datasheet

    Abstract: specifications of ic 1408 APT65GP60B2 400v 5000
    Text: APT65GP60B2 600V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT65GP60B2 IC 7438 datasheet specifications of ic 1408 APT65GP60B2 400v 5000

    Untitled

    Abstract: No abstract text available
    Text: APT65GP60B2 600V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT65GP60B2 APT65GP60B2

    Untitled

    Abstract: No abstract text available
    Text: APT65GP60B2 600V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT65GP60B2

    APT0201

    Abstract: APT0202 12 VOLT 10 AMP smps 12 VOLT 2 AMP smps circuit mosfet 300 volt 12 VOLT 100 AMP smps dodge high current IGBT based buck converter IGBT 400 amp IGBT cross
    Text: Application Note APT0302 Rev. A April 4, 2003 Latest Technology PT IGBTs vs. Power MOSFETs Jonathan Dodge, P.E. Senior Applications Engineer Advanced Power Technology 405 S.W. Columbia Street Bend, OR 97702 USA Based on a paper presented at PCIM China 2003


    Original     		PDF APT0302 APT0201 APT0202 12 VOLT 10 AMP smps 12 VOLT 2 AMP smps circuit mosfet 300 volt 12 VOLT 100 AMP smps dodge high current IGBT based buck converter IGBT 400 amp IGBT cross

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


    Original     		PDF

    sot-227 footprint

    Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
    Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF

    APT100GF60LR

    Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
    Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of


    Original     		PDF

    600 volt mosfet

    Abstract: 1200 volt mosfet TO247 package dissipation 125OC APT13GP120B APT13GP120K APT15GP60K APT35GP120B2D2 APT40GP60B2D1 MIL-PRF19500
    Text: Product Profile Advanced Power Technology New Power MOS 7 IGBTs for SMPS Applications 600 Volt Size 6 - APT40GP60B2D1 Product Description Higher Threshold Voltage and Reduced “Miller Capacitance” - this provides for increased noise and spurious turn-on immunity and eliminates the


    Original     		PDF APT40GP60B2D1 O-247 APT25GP120B2D1 APT35GP120B2D2 APT45GP120B2D2 APT50GP60B2D2 APT65GP60L2D2 264-MAXTM 600 volt mosfet 1200 volt mosfet TO247 package dissipation 125OC APT13GP120B APT13GP120K APT15GP60K APT35GP120B2D2 APT40GP60B2D1 MIL-PRF19500