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    125C-310

    Abstract: No abstract text available
    Text: APT75GP120JD2 1200V E E POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


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    APT75GP120JD2 125C-310 PDF

    600 volt mosfet

    Abstract: 1200 volt mosfet TO247 package dissipation 125OC APT13GP120B APT13GP120K APT15GP60K APT35GP120B2D2 APT40GP60B2D1 MIL-PRF19500
    Text: Product Profile Advanced Power Technology New Power MOS 7 IGBTs for SMPS Applications 600 Volt Size 6 - APT40GP60B2D1 Product Description Higher Threshold Voltage and Reduced “Miller Capacitance” - this provides for increased noise and spurious turn-on immunity and eliminates the


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    APT40GP60B2D1 O-247 APT25GP120B2D1 APT35GP120B2D2 APT45GP120B2D2 APT50GP60B2D2 APT65GP60L2D2 264-MAXTM 600 volt mosfet 1200 volt mosfet TO247 package dissipation 125OC APT13GP120B APT13GP120K APT15GP60K APT35GP120B2D2 APT40GP60B2D1 MIL-PRF19500 PDF