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    APT801 Price and Stock

    Microchip Technology Inc APT8011JFLL

    MOSFET N-CH 800V 51A ISOTOP
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    DigiKey APT8011JFLL Tube 10 1
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    Onlinecomponents.com APT8011JFLL
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    TME APT8011JFLL 1
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    NAC APT8011JFLL Tube 3
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    Microchip Technology Inc APT8011JLL

    MOSFET N-CH 800V 51A ISOTOP
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    DigiKey APT8011JLL Tube 8 1
    • 1 $92.39
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    Avnet Americas APT8011JLL Tube 26 Weeks 10
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    Mouser Electronics APT8011JLL
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    Arrow Electronics APT8011JLL 153 26 Weeks 1
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    Microchip Technology Inc APT8011JLL Tube 26 Weeks
    • 1 $92.39
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    Onlinecomponents.com APT8011JLL
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    TME APT8011JLL 1
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    NAC APT8011JLL Tube 4
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    Microchip Technology Inc APT8018JN

    MOSFET N-CH 800V 40A ISOTOP
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    DigiKey APT8018JN Tray
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    Microchip Technology Inc APT8015JVR

    MOSFET N-CH 800V 44A ISOTOP
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    DigiKey APT8015JVR Tube 10
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    • 10 $80.36
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    Avnet Americas APT8015JVR Tube 26 Weeks 10
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    Mouser Electronics APT8015JVR 42
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    Microchip Technology Inc APT8015JVR Tube 26 Weeks
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    NAC APT8015JVR Tube 4
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    Master Electronics APT8015JVR
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    Microchip Technology Inc APT8014JLL

    MOSFET N-CH 800V 42A ISOTOP
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    DigiKey APT8014JLL Tube 10
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    Avnet Americas APT8014JLL Tube 26 Weeks 10
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    Mouser Electronics APT8014JLL
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    Newark APT8014JLL Bulk 10
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    Microchip Technology Inc APT8014JLL Tube 26 Weeks
    • 1 $56.7
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    Onlinecomponents.com APT8014JLL
    • 1 $54.15
    • 10 $48.45
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    TME APT8014JLL 1
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    NAC APT8014JLL Tube 6
    • 1 $52.6
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    • 1 $54.15
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    Find more APT801 price and stock on Findchips.com

    APT801 Datasheets (34)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT8011 Advanced Power Technology Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Original PDF
    APT8011JFLL Advanced Power Technology POWER MOS 7 800V 51A 0.110 Ohm Original PDF
    APT8011JFLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
    APT8011JLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT8011JLL Microsemi Power MOS 7 Low Loss MOSFET Original PDF
    APT8014JFLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT8014JFLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
    APT8014JFLL Unknown Power MOS 7, 800V 42A, MOS-FET N-Channel enhanced Original PDF
    APT8014JLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT8014JLL Microsemi Power MOS 7 Low Loss MOSFET Original PDF
    APT8014L2FLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT8014L2FLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
    APT8014L2FLLG Microsemi Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Original PDF
    APT8014L2LL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT8014L2LL Microsemi Power MOS 7 Low Loss MOSFET Original PDF
    APT8014L2LL-03 Advanced Power Technology Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Original PDF
    APT8014L2LLG Microchip Technology MOSFET N-CH 800V 52A 264 MAX Original PDF
    APT8015 Advanced Power Technology Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Original PDF
    APT8015JVFR Advanced Power Technology POWER MOS V 800V 44A 0.150 Ohm Original PDF
    APT8015JVFR Microsemi Power MOS V FREDFET Original PDF

    APT801 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    APT8014L2FLL

    Abstract: MAX7238
    Text: APT8014L2FLL 800V 52A 0.140Ω POWER MOS 7 R FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT8014L2FLL O-264 O-264 APT8014L2FLL MAX7238 PDF

    APT8015JVFR

    Abstract: APT8015
    Text: APT8015JVFR 44A 0.150Ω Ω 800V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT8015JVFR OT-227 E145592 APT8015JVFR APT8015 PDF

    7106

    Abstract: data sheet IC 7106 IL 7106 APT8014JFLL
    Text: APT8014JFLL 800V 42A 0.140Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT8014JFLL OT-227 7106 data sheet IC 7106 IL 7106 APT8014JFLL PDF

    APT8018L2VFR

    Abstract: No abstract text available
    Text: APT8018L2VFR 800V 43A POWER MOS V FREDFET 0.180Ω L2VFR TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT8018L2VFR O-264 O-264 APT8018L2VFR PDF

    APT8014L2FLL

    Abstract: APT8014L2FLLG
    Text: 800V 52A APT8014L2FLL *G POWER MOS 7 R 0.16Ω Ω APT8014L2FLLG* Denotes RoHS Compliant, Pb Free Terminal Finish. FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching


    Original     		APT8014L2FLL APT8014L2FLLG* O-264 O-264 APT8014L2FLL APT8014L2FLLG PDF

    Untitled

    Abstract: No abstract text available
    Text: APT8011JLL 800V 51A 0.110W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original     		APT8011JLL OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT8015JVFR 44A 0.150Ω Ω 800V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT8015JVFR OT-227 Vol157) E145592 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT8014L2FLL 800V 52A 0.140W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		APT8014L2FLL O-264 O-264 MIL-STD-750 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT8011JFLL 800V 51A 0.125Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT8011JFLL PDF

    7238 diode

    Abstract: apt30df60
    Text: 800V 52A APT8014L2FLL *G POWER MOS 7 R 0.16Ω Ω APT8014L2FLLG* Denotes RoHS Compliant, Pb Free Terminal Finish. FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching


    Original     		APT8014L2FLL APT8014L2FLLG* O-264 7238 diode apt30df60 PDF

    Untitled

    Abstract: No abstract text available
    Text: 800V 52A APT8014L2FLL *G POWER MOS 7 R 0.16Ω Ω APT8014L2FLLG* Denotes RoHS Compliant, Pb Free Terminal Finish. FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching


    Original     		APT8014L2FLL APT8014L2FLLG* O-264 O-264 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT8014JLL 800V 42A 0.140Ω R POWER MOS 7 S S MOSFET 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT8014JLL OT-227 PDF

    apt8015jvr

    Abstract: No abstract text available
    Text: APT8015JVR 44A 0.150Ω 800V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT8015JVR OT-227 E145592 apt8015jvr PDF

    7103

    Abstract: 52AJ
    Text: APT8014L2LL 800V 52A 0.140W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original     		APT8014L2LL O-264 O-264 7103 52AJ PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED PO W ER a Te c h n o l o g y APT8018JN ISOTOP' POWER MOS IV® 800V 40A 0.18Í2 S Ù " U L DIE Recognized" File No. E145592 S SINGLE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		APT8018JN E145592 8018JN OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: A dvanced O D O P O W E Ii Te c h n o l o g y APT801R2BNR 800V 9.0A 1.20Í2 APT801R4BNR 800V 8.5A 1.40Q S POWER MOS IV« UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS APT801R2BNR Parameter 800 Drain-Source Voltage


    OCR Scan     		APT801R2BNR APT801R4BNR APT801R4BNR APT801R2BNR MIL-STD-750 O-247AD PDF

    APT801R2cN

    Abstract: C 632 S1M
    Text: A D VA NC ED o POUER TECHNOLOGY b lE D • □ E 5 7 cì D Eì Q0GQ777 215 HAVP Advanced P o w er Tec h n o lo g y D sili O S POWER MOS IV APT801R2CN APT751R2CN APT801R4CN APT751R4CN 800V 750V 800V 750V 7.0A 7.0A 6.5A 6.5A 1.20Q 1.20Q. 1.40Ì2 1.40Q


    OCR Scan     		Q0GQ777 APT801R2CN APT751R2CN APT801R4CN APT751R4CN 751R2CN 801R2CN 751R4GCN 801R4CN g-100 C 632 S1M PDF

    7516-D

    Abstract: No abstract text available
    Text: ADVANCED POWER TECHNOLOGY P D 2 /-HL J |£ ) G(2) <>^ / X /^ / kX / 4 T (/ 1 i Ä V / / ôs<2> V \ l i / ^ P P ^ f ^ I / w IW C b D B ^ g POW ER T'S^-15 : Te c h n o l o g y . APT8016DFN 800V 47.0A 0.16 ¿2 APT7516DFN 750V 47.0A 0.16 l i POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFEtS


    OCR Scan     		APT8016DFN APT7516DFN APT8016DFH MIL-STD-750 7516-D PDF

    Diode 188

    Abstract: APT8016DFN APT7516DFN 7516-D 47Amps
    Text: ADVANCED MIE POWER TECHNOLOGY 1 oaSTiai DÜDOS'IM S32 • I AVP ■ ADVANCED F O M fER _T-3>°h$„ I Techno lo g y O D 2> 0<2 à (fò APT8016DFN 800V 47.0A 0.16 Ï2 APT7516DFN 750V 47.0A 0.16 ¿1 0 3(2 POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFEtS


    OCR Scan     		APT8016DFN APT7516DFN MIL-STD-750 Diode 188 7516-D 47Amps PDF

    Untitled

    Abstract: No abstract text available
    Text: O A d van ced po w er Te c h n o l o g y D APT8018JN As 800V 40A 0.18Q 5 M " U L Recognized" File No. E145592 S ISOTOP® POWER MOS IV' SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		APT8018JN E145592 8018JN OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT8015JVR ADVANCED POW ER Te c h n o l o g y 800V 44A 0.150Q POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		APT8015JVR OT-227 E145592 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED P ow er Te c h n o l o g y APT8018JNFR ISOTOP* 800V 40A 0.18 S û "UL Recognized" File No. E145592 S POWER MOS IV( AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS All Ratings: T c = 25 C unless otherwise specified.


    OCR Scan     		APT8018JNFR E145592 APT8018JNFR OT-227 PDF

    APT8018JNFR

    Abstract: No abstract text available
    Text: A d va n ced P o w er Te c h n o l o g y APT8018JNFR 800V 40A 0.18£2 ISOTOP S M "UL Recognized" File No. E145592 S POWER MOS IVe AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS 'd ’dm V GS


    OCR Scan     		APT8018JNFR E145592 OT-227 PDF

    APT901RBN

    Abstract: apt4530bn APT801R2BN APT4030BN APT902R4BN APT*1002R4BN APT1003R5BN APT3520BN APT1001RBN APT1002RBN
    Text: ADVANCED POWER TECHNOLOGY C APT PART N U M BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN A PT8090BN APT801R2BN A PT801R4BN APT802RBN A PT802R4BN APT7575BN


    OCR Scan     		000027b APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN apt4530bn APT801R2BN APT4030BN APT902R4BN APT*1002R4BN APT3520BN PDF