APT80GA60S Search Results

APT80GA60S Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
APT80GA60S		Microsemi	Insulated Gate Bipolar Transistor - Power MOS 8; Package: D3 [S]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 80;		Original	PDF

APT80GA60S Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
APT80GA60B Abstract: APT80GA60S MIC4452 Text: APT80GA60B APT80GA60S 600V High Speed PT IGBT TO -2 47 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	PDF	APT80GA60B APT80GA60S APT80GA60B APT80GA60S MIC4452
Untitled Abstract: No abstract text available Text: APT80GA60B APT80GA60S 600V High Speed PT IGBT TO - 24 7 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	PDF	APT80GA60B APT80GA60S APT80GA60S APT80GA60B
APT80GA60B Abstract: APT80GA60S MIC4452 Text: APT80GA60B APT80GA60S 600V High Speed PT IGBT TO -2 47 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	PDF	APT80GA60B APT80GA60S APT80GA60B APT80GA60S MIC4452
Untitled Abstract: No abstract text available Text: APT80GA60B APT80GA60S 600V High Speed PT IGBT TO - 24 7 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	PDF	APT80GA60B APT80GA60S