APW 3120 Search Results

APW 3120 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
ISL43120IHZ-T		Renesas Electronics Corporation	Low-Voltage, Single Supply, Dual SPST, SPDT Analog Switches
2SD1312(0)-T-AZ		Renesas Electronics Corporation	Bipolar Power Transistors, , /
G832MC031201222HR		Amphenol Communications Solutions	0.80mm Board-to-Board 100Ω Connector, Pitch 0.8mm, Height 3.7 mm, 120 Positions, Dual Row, BTB Vertical Receptacle SMT, 30u\\ Gold White.
G832MB031206322HR		Amphenol Communications Solutions	0.80mm Board-to-Board 85Ω Connector, Pitch 0.8mm, Height 11.7 mm, 120 Positions, Dual Row, BTB Vertical Receptacle SMT, 8u\\ Gold White.
G832MB031205022HR		Amphenol Communications Solutions	0.80mm Board-to-Board 85Ω Connector, Pitch 0.8mm, Height 7.7 mm, 120 Positions, Dual Row, BTB Vertical Receptacle SMT, Gold Flash White.

APW 3120 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
24C02 Abstract: HB526R864ESN-10 HB526R864ESN-10H HB526R864ESN-12 Hitachi DSA0015 Nippon capacitors Text: HB526R864ESN-10H/10/12 4,194,304-word x 64-bit Non Parity × 2-bank Synchronous Dynamic RAM Module ADE-203-671A (Z) Rev. 1.1 Feb. 20, 1997 Description The HB526R864ESN belongs to 8 byte DIMM (Dual In-line Memory Module) family, and has been developed a as optimized main memory solution for 8 byte processor applications. The HB526R864ESN is	Original	HB526R864ESN-10H/10/12 304-word 64-bit ADE-203-671A HB526R864ESN 16-Mbit HM5216405TB) 24C02) 24C02 HB526R864ESN-10 HB526R864ESN-10H HB526R864ESN-12 Hitachi DSA0015 Nippon capacitors	PDF
Hitachi DSA002749 Abstract: Nippon capacitors Text: HB526R864ESN-10H/10/12 4,194,304-word x 64-bit Non Parity × 2-bank Synchronous Dynamic RAM Module ADE-203-671C (Z) Rev. 3.0 Jul. 25, 1997 Description The HB526R864ESN belongs to 8 byte DIMM (Dual In-line Memory Module) family, and has been developed a as optimized main memory solution for 8 byte processor applications. The HB526R864ESN is	Original	HB526R864ESN-10H/10/12 304-word 64-bit ADE-203-671C HB526R864ESN 16-Mbit HM5216405) 24C02) Hitachi DSA002749 Nippon capacitors	PDF
J 24C02 S1 Abstract: Nippon capacitors Text: HB526R864ESN-10H/10/12 4,194,304-word x 64-bit Non Parity × 2-bank Synchronous Dynamic RAM Module ADE-203-671C (Z) Rev. 3.0 Jul. 25, 1997 Description The HB526R864ESN belongs to 8 byte DIMM (Dual In-line Memory Module) family, and has been developed a as optimized main memory solution for 8 byte processor applications. The HB526R864ESN is	Original	HB526R864ESN-10H/10/12 304-word 64-bit ADE-203-671C HB526R864ESN 16-Mbit HM5216405) 24C02) J 24C02 S1 Nippon capacitors	PDF
bcm 4330 Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?	Original		PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Preliminary Specification Octal buffer/line driver with 5-volt tolerant Inputs/outputs; damping resistor; 3-state FEATURES • 5-Volt tolerant inputs/outputs, for interfacing with 5-vott logic. • Supply voltage range of 2.7 V to 3.6 V	OCR Scan	LVCH241A 74LVC	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Preliminary Specification Octal buffer/line driver with 5-volt tolerant 74LVC2241A m £uts/outguts^Jam ginc^esistor^stat^^^^^^^^4LVC H 2241A FEATURES • 5-Volt tolerant inputs/outputs, for interfacing with 5-volt logic. • Supply voltage range of 2.7 V	OCR Scan	74LVC2241A LVCH241A 74LVC	PDF
Untitled Abstract: No abstract text available Text: HB526R864ESN-10H/10/12 4,194,304-word x 64-bit Non Parity x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-671A (Z) Rev. 1.1 Feb. 20, 1997 Description The HB526R864ESN belongs to 8 byte DIMM (Dual In-line Memory Module) family, and has been developed a as optimized main memory solution for 8 byte processor applications. The HB526R864ESN is	OCR Scan	HB526R864ESN-10H/10/12 304-word 64-bit ADE-203-671A HB526R864ESN 16-Mbit HM5216405TB) 24C02)	PDF
TMS626812 Abstract: No abstract text available Text: TMS626812 1048576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY ^ • • • • • • • • • • • • • • Organization. . . 1M x 8 x 2 Banks 3.3-V Power Supply ±10% Tolerance Two Banks for On-Chip Interleaving (Gapless Accesses)	OCR Scan	TMS626812 SMOS687A 83-MHz	PDF