cd4xxx
Abstract: qsc 1110 SN74ACTXXXPW 74HCxx SN74LVCxxx semiconductor cross reference M74HCXXXB1R M74HCXXXM1R SN74ACTXXXN M-SD-DT
Text: Lit. #585362-003 Fairchild Semiconductor LOGIC INDUSTRY CROSS-REFERENCE GUIDE REV. 4/2000 Visit us on the Web at www.fairchildsemi.com LOGIC INDUSTRY CROSS-REFERENCE GUIDE Family ABT AC ACT ACTQ ALS AS CD4K ECL F FAST, (FASTr) Package PDIP SOIC Wide Body SOIC
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300-mil
N-1392
cd4xxx
qsc 1110
SN74ACTXXXPW
74HCxx
SN74LVCxxx
semiconductor cross reference
M74HCXXXB1R
M74HCXXXM1R
SN74ACTXXXN
M-SD-DT
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907 TRANSISTOR smd
Abstract: F75299 10d471 SC053
Text: ACT520 QC 1.5A Application Report High Performance QR Mode 18W Quick Changer Using ACT520 FEATURES • • Quasi-Resonant PWM Controller Accurate CC with line and inductance compensation No-load Standby Power < 30mW Excellent Efficiency >80% with Low Cost 4N65 MOSFET
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ACT520
ACT520
230VAC,
Load50
907 TRANSISTOR smd
F75299
10d471
SC053
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BGY61
Abstract: DIN45004B
Text: bbSBTBl Philips Semiconductors 003234^ ISO • APy Product specification CATV amplifier module BGY61 i N AMER PHILIPS/DISCRETE PINNING - SOT115C FEATURES • • • • • Excellent linearity Extremely low noise Silicon nitride passivation Rugged construction
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bbS3T31
00323l4I
BGY61
-SOT115C
-60dB
DIN45004B;
BGY61
DIN45004B
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Untitled
Abstract: No abstract text available
Text: bbS3T31 0Q322Dfl 757 Philips Semiconductors APY Product specification NPN 8 GHz wideband transistor crystal X3A-BFQ195 AUER PHILIPS/DISCRETE b'JE ]> MECHANICAL DATA DESCRIPTION Crystal NPN crystal used in BFG195 SOT103 , BFG197 (SOT143) and BFG198 (SOT223). Crystals are supplied
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bbS3T31
0Q322Dfl
X3A-BFQ195
BFG195
OT103)
BFG197
OT143)
BFG198
OT223)
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bb53R31 002T2Q3 bOfi Apy Product specification BLV100 UHF power transistor N AUER PHILIPS/DISCRETE b'lE D PIN CONFIGURATION FEATURES • Internal input matching to achieve high power gain • Ballasting resistors for an optimum temperature profile
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bb53R31
002T2Q3
BLV100
OT171
OT171
MCA923
MCA910
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BFQ65
Abstract: BFG67 BFQ67 X3A-BFQ65 to4 TRANSISTOR
Text: ^ □53^31 0G32S0b TÔ4 Philips Semiconductors • APY Product specification NPN 8 GHz wideband transistor crystal ^ N X3A-BFQ65 AMER PHILIPS/DISCRETE DESCRIPTION b^E D MECHANICAL DATA NPN crystal used in BFQ65 (SOT37 , BFG67 (SOT143) and BFQ67 (SOT23). Crystals are supplied as whole
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0G32S0b
X3A-BFQ65
BFQ65
BFG67
OT143)
BFQ67
X3A-BFQ65
URV-3-5-52/733
BFQ65
BFG67
BFQ67
to4 TRANSISTOR
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X3A-BFQ195
Abstract: BFG195 BFG197 BFG198
Text: Philips Semiconductors |H bb SB T B l NPN 8 GHz wideband transistor crystal D0322Dfl 757 APY Product specification X3A-BFQ195 N AMER PHILIPS/DISCRETE LTE ]> MECHANICAL DATA DESCRIPTION Crystal NPN crystal used in BFG195 SOT103 , BFG197 (SOT143) and BFG198 (SOT223). Crystals are supplied
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bbS3T31
00322DÃ
X3A-BFQ195
BFG195
BFG197
OT143)
BFG198
OT223)
X3A-BFQ195
URV-3-5-52/733
BFG195
BFG197
BFG198
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6f4p
Abstract: 604n RK 100 U540
Text: TpHOfl-neHTOÄ 6 P4n Triode-pentode TpHOÄ-neHTOÄ 60411 npe/masHa^eH: neHTOßHan qacTb — min pa6ora b Bbixo^Hbix KacKa^ax BimeoycHjiHTejieö h YHH; TpHOÄHan qacTb — b pa3jmqHbix uennx APY h b KaqecTBe npe^ßapHTejibHoro y¥m TejieBH3H0HHbix h pazmoBemaTejibHbix npHeMHHKOB.
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Harpy30K
6f4p
604n
RK 100
U540
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BFR90 transistor
Abstract: BFR90 Transistor BFR90 BFQ51 UCD074 BFR90 PHILIPS
Text: Philips Semiconductors bbS 3*î31 O O B lTTê S f lb • APY Product specification NPN 5 GHz wideband transistor ^ BFR90 N AMER PH IL IPS/DISCRETE DESCRIPTION b'ìE D PINNING NPN transistor in a plastic SOT37 envelope. It is primarily intended for use in RF amplifiers such as aerial
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BFR90
BFQ51.
bb53T31
DD3160S
BFR90
BFR90 transistor
Transistor BFR90
BFQ51
UCD074
BFR90 PHILIPS
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8512A
Abstract: MIL-C-50 MIL-T-10727 6-66461-3 0203A
Text: 4 D R A W IN G IS U N P U B LIS H E D . RELEASED FOR ALL C O P Y R IG H T By -, P U B LIC A T IO N R IG H T S 2 - R E VIS IO N S RESERVED. - D E S C R IP T IO N AV5 H D SPRING STAI NLESS Q Q -S -766 1 . 6 8 9 + 0 . 0 5 1 DIA [.0665 ±.0020] R— M N APY
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MIL-C-50
MIL-T-10727
QQ-N-290.
MIL-G-45204
OVER24
C06646
8512A
6-66461-3
0203A
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APY12
Abstract: APY 12 Siemens photodiode visible light Germanium power K/HOP-1045
Text: SFH 231 SIEMENS GERMANIUM PIN PHOTODIODE Package Dimensions in Inches mm FEATURES Maximum Ratings * Anode Marking: Projection at Package Bottom • Usage: Visible Light and Near Infrared Range * High Spectral Sensitivity ■ High Reliability * Very Short Switching Time
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1300nm,
100nA)
APY12
APY 12
Siemens photodiode visible light
Germanium power
K/HOP-1045
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Untitled
Abstract: No abstract text available
Text: This document Is the property of Amphenol Corporation and is delivered on the express condition that it is not to be disclosed, reproduced or used, In whole or in part, for manufacture or sale by anyone other than Amphenol Corporation without Its prior concert, It that no right It granted to dledoee
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I7/25/0B
17/25/Oh
L17H2222130
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Untitled
Abstract: No abstract text available
Text: 6 D RA WI NG THIS MADE IN D RA WI NG THIRD IS A NGL E UNRUBLI S H E D , COPYRIGHT 5 PROJECTION RELEASED 19 BY AMP FOR PUBLICATION INCORPORATED. ALL INTERNATIONAL RIGHTS RESERVED. D BLUE OR P O L Y P H E N Y L E N E PER M I L - M - 2 4 S 1 9 , A POLE COPPECYOR
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27-JUL-01
/home/ampl6412/edmm
20Y683-8
2088B6PART
P05Y5D
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0070220
Abstract: 208H
Text: 1. M echanical D im ensions: 2. Sch em atic: c D.240 A 0.730 Max 0.045 0.025 1 - it E 0.050 0.025 Max □□□□□□□□□□□□ X o 2 XFMRS YYWW XFATM8QS29 • in 7 o m -H o o CD CD CO 1— 0 18 o o Qo oo o o 0.030 — o 11 o 9j§8 — ÖDÖÖÖDÖÖÖDÖÖ
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XFATM8QS29
100KHz
100mV
100MHz
350uH
-16dB
30MHz
60MHz
80MHz
0070220
208H
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Untitled
Abstract: No abstract text available
Text: S H L 1 1 5 - 3 M T 'V t i- Z 'f " J 9 M 5 D HS Miniature Power Rocker Switches with Color Indicator & Features 1. to 2. 3. f f li- íc t v íT o 4. 4. 5. « T l ì s ^ 7 « ^ # 2 5 0 0 U - t z 7 > ^ b ïM T - t o 6. 6. Easy distinction of sw itching position due to a color
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Untitled
Abstract: No abstract text available
Text: Product Specification Sheet AT&T Initial Use: 327HH DACSII TSI1024 Description The AT&T 327HH TSI1024 is a time slot interchanger TSI that switches a 1024 channel time division multiplexed bus. Any input channel may be switched to any output channel. The chip receives network
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327HH
TSI1024
327HH
TSI1024
TS11024
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82S191
Abstract: 82S191/BKA 82S191/B3A 82S191A 82S191A/BLA GDIP3-T24
Text: Philips Sem icond uctors M ilitary B ipolar M em ory Products P rod uct specification 16K-bit TTL bipolar PROM 2048 x 8 82S191, 82S191A FEATURES DESCRIPTION • Address access time: The 82S191 and 82S191A are field programmable, which means that custom patterns are immediately available by following the
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16K-bit
62S191
100ns
82S191
-150nA
82S191,
82S191A
500ns
711DfiSb
56fib
82S191/BKA
82S191/B3A
82S191A/BLA
GDIP3-T24
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DC-10
Abstract: MT30610 MT30620 MT30630 VDE0110
Text: 7 55 1 2 PHOTO TRIAC COUPLER M ARKTECH INTERNATIONAL IfiE I> MT30610, MT30620, MT30630 • S TTb OQQOSG ■ T-41-& 7 APPLICATIONS • O FFIC E MACHINERY • H O U S EH O LD APPLIANCES • TRIAC DRIVER • SOLID STATE RELAY • TELEC O M M U N IC A TIO N S
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MT30610,
MT30620,
MT30630
MT30620
MT30630
MT30610)
MT30620)
MT30630)
100mA
DC-10
MT30610
VDE0110
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CnPABO
Abstract: No abstract text available
Text: nporPAMMHbiM MOfíynb fín z monitor O E H A P Y K E H M ä T P A H C n O P T H b I X CPEflCTB M O n P E f l E A E H M Z X A P A K T E P M C T M K f l O P O M H O r O f l B M M E H M Z n O M 3 0 E P A M E H M t ö O T B M f l E O K A M E P b l TMKernel C n p aB O H H o e pyKOBOflCTBO
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M30EPAMEHMfÃ
b30BaHHeM
30BaHHS
CnPABO
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BT 136 PIN DIAGRAM
Abstract: TDA4421 TDA4400 4420 LA 4420 tda 4420 tda power amplifier circuit diagram tda 136 4421 tda 4400
Text: TDA 4420 • TDA 4421 'W Monolithisch Integrierte Schaltung Monolithic Integrated Circuit Anwendungen: Bild-ZF- und AFC-Schaltung fü r Farb- und Schwarz-W eiß-Fernsehem pfänger TDA 4420 bei PNP-Tunern TDA 4421 bei NPN-Tunern Applications: Video-IF- and AFC circu it lo r co lo u r and m onochrom e television receivers.
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bje 133 resistor
Abstract: No abstract text available
Text: bbSB'lBl D D S T ^ M ST? • APX Philips Semiconductors Productspecifjcatj^ VHF power MOS transistor — ^ BLF244 i FEATURES N AMER PHILIPS/] ISCRETE b*]E B PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability
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BLF244
bje 133 resistor
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors ^ 53^ 31 0031bDb b lO M APX Product specification NPN 8 GHz wideband transistor ^ BFQ66 N DESCRIPTION AUER PHILIPS/DISCRETE b'lE » PINNING Small-signal planar epitaxial NPN transistor in hermetically-sealed sub-miniature SOT173 and
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0031bDb
BFQ66
OT173
OT173X
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RE025X
Abstract: tube RV 278 ScansU9X22
Text: K o ü K c u a A b H b iü z e m p a r o p r n iú T erpod C o a x ia l tra n sm ittin g tetrode K o a xia le Sendetetrode RE025XB -4417 È/C 0 1 4 ,6 -V i - 0 ,6 io e o »> H >1 35 7 . rv N-' c io otf nP H M E H E H H E 9jieKTpoHH3Ä JiaMna TECJ1A RE025X B
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RE025XB
RE025X
30BaTb
RE025XB
tube RV 278
ScansU9X22
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tube RV 278
Abstract: RE025X tesla rf oscillators PAEO lem HA RE025XB keramische
Text: K o ü K cu a A b H b iü z e m p a r o p r n i ú T e rp o d C o a x ia l tra n sm ittin g tetrode K o a xia le Sendetetrode RE025XB -4417 È/C 0 1 4 ,6 -V i - 0 ,6 io e o »> H >1 35 7 . rv N-' c io otf nP H M E H E H H E 9jieKTpoHH3Ä JiaMna TEC J 1A RE025X B
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RE025XB
Hcn0jiB30BaHKH
30BaTB
tube RV 278
RE025X
tesla rf oscillators
PAEO
lem HA
keramische
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