Untitled
Abstract: No abstract text available
Text: Yokohama Electron LED Lighting Solution Yokohama Electron Date: December 01, 2005 Technical Data Customer's name: Part Number: OPT6050SR3-XX Authorization Yokohama Electron Co., Ltd. Technical Center: 4-11 Sanuki Arayamachi Akita, 010-1623 Japan Akita Prefectural Industrial Technology Center,
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OPT6050SR3-XX
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led lighting
Abstract: OPT605
Text: Yokohama Electron LED Lighting Solution Yokohama Electron Date: December 01, 2005 Technical Data Customer's name: Part Number: OPT6050SR2-XX Authorization Yokohama Electron Co., Ltd. Technical Center: 4-11 Sanuki Arayamachi Akita, 010-1623 Japan Akita Prefectural Industrial Technology Center,
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OPT6050SR2-XX
led lighting
OPT605
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by118
Abstract: No abstract text available
Text: CY8C23433, CY8C23533 PSoC Mixed-Signal Aray Features • ■ Powerful Harvard Architecture Processor ❐ M8C processor speeds to 24 MHz ❐ 8x8 multiply, 32-bit accumulate ❐ Low power at high speed ❐ 3.0 to 5.25V operating voltage ❐ Industrial temperature range: -40°C to +85°C
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CY8C23433,
CY8C23533
32-bit
14-bit
by118
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Untitled
Abstract: No abstract text available
Text: Yokohama Electron LED Lighting Solution Yokohama Electron Date: December 01, 2005 Technical Data Customer's name: Part Number: OPT6050DW3-XX Authorization Yokohama Electron Co., Ltd. Technical Center: 4-11 Sanuki Arayamachi Akita, 010-1623 Japan Akita Prefectural Industrial Technology Center,
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OPT6050DW3-XX
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Untitled
Abstract: No abstract text available
Text: Yokohama Electron LED Lighting Solution Yokohama Electron Date: December 01, 2005 Technical Data Customer's name: Part Number: OPT6050DW2-XX Authorization Yokohama Electron Co., Ltd. Technical Center: 4-11 Sanuki Arayamachi Akita, 010-1623 Japan
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OPT6050DW2-XX
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K7Q161852A
Abstract: K7Q161852A-FC10 K7Q161852A-FC13 K7Q161852A-FC16 K7Q163652A K7Q163652A-FC10 K7Q163652A-FC13 K7Q163652A-FC16
Text: K7Q163652A K7Q161852A 512Kx36 & 1Mx18 QDRTM b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. April, 30, 2001 Advance 0.1 1. Amendment 1 Page 3,4 PIN NAME DESCRIPTION W 4A) : from Read Control Pin to Write Control
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K7Q163652A
K7Q161852A
512Kx36
1Mx18
512Kx36-bit,
1Mx18-bit
K7Q161852A
K7Q161852A-FC10
K7Q161852A-FC13
K7Q161852A-FC16
K7Q163652A
K7Q163652A-FC10
K7Q163652A-FC13
K7Q163652A-FC16
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10D-11
Abstract: K7R160982B K7R160982B-FC16 K7R160982B-FC20 K7R161882B K7R161882B-FC16 K7R161882B-FC20 K7R163682B K7R163682B-FC16 K7R163682B-FC20
Text: K7R163682B K7R161882B K7R160982B 512Kx36 & 1Mx18 & 2Mx9 QDR TM II b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit, 2Mx9-bit QDRTM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Oct. 17, 2002 Advance 0.1 1. Change the Boundary scan exit order.
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K7R163682B
K7R161882B
K7R160982B
512Kx36
1Mx18
512Kx36-bit,
1Mx18-bit,
10D-11
K7R160982B
K7R160982B-FC16
K7R160982B-FC20
K7R161882B
K7R161882B-FC16
K7R161882B-FC20
K7R163682B
K7R163682B-FC16
K7R163682B-FC20
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K7Q161864B-FC16
Abstract: D0-35 K7Q161864B K7Q163664B K7Q163664B-FC16
Text: K7Q163664B K7Q161864B 512Kx36 & 1Mx18 QDRTM b4 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Jan. 27, 2004 Advance 1.0 1. Final spec release Mar. 18, 2004 Final Rev. No. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
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K7Q163664B
K7Q161864B
512Kx36
1Mx18
512Kx36-bit,
1Mx18-bit
K7Q161864B-FC16
D0-35
K7Q161864B
K7Q163664B
K7Q163664B-FC16
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K7M643635M-Q
Abstract: No abstract text available
Text: K7N643631M K7N641831M Preliminary 2Mx36 & 4Mx18 Pipelined NtRAM TM Document Title 2Mx36 & 4Mx18-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. Sep. 30. 2002 Advance 0.1 1. Delete the speed bins FT : 7.5ns, 8.5ns / PP : 200MHz
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K7N643631M
K7N641831M
2Mx36
4Mx18
4Mx18-Bit
200MHz)
K7N643635M
K7N643631M)
50REF
K7M643635M-Q
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K7N161801A
Abstract: K7N163601A
Text: K7N163601A K7N161801A 512Kx36 & 1Mx18 Pipelined NtRAM TM Document Title 512Kx36 & 1Mx18-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Initial document. Add JTAG Scan Order Add x32 org and industrial temperature . Add 165FBGA package Speed bin merge.
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K7N163601A
K7N161801A
512Kx36
1Mx18
1Mx18-Bit
165FBGA
K7N1636
K7N161801A
K7N163601A
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D0-35
Abstract: K7J161882B K7J161882B-FC16 K7J161882B-FC20 K7J161882B-FC25 K7J163682B K7J163682B-FC16 K7J163682B-FC20 K7J163682B-FC25
Text: K7J163682B K7J161882B 512Kx36 & 1Mx18 DDR II SIO b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit DDR II SIO b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Dec. 16, 2002 Advance 0.1 1. Change the JTAG Block diagram Dec. 26, 2002 Preliminary
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K7J163682B
K7J161882B
512Kx36
1Mx18
512Kx36-bit,
1Mx18-bit
165FBGA
D0-35
K7J161882B
K7J161882B-FC16
K7J161882B-FC20
K7J161882B-FC25
K7J163682B
K7J163682B-FC16
K7J163682B-FC20
K7J163682B-FC25
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CX9010-N031
Abstract: Beckhoff Ek1100 ES3004 bc515 hengstler 890 IL2301bxxx Fisher ROC 107 modbus CU2508 KL2541 HEIDENHAIN EnDat 2.1
Text: BECKHOFF New Automation Technology Ürünlere Genel Bakış Endüstriyel PC Gömülü PC Lightbus I/O Terminalleri Fieldbus Kutusu Sürücü Teknolojisi PC-Fieldbus kartları, Ağ anahtarları 2 Automation Motion I/O IPC Beckhoff Ürünlerine Genel Bakış | Bu katalog, Endüstriyel bilgisayarlar, saha haberleşmesi, sürücü teknolojileri, otomasyon yazılımları
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DK1409-0808
CX9010-N031
Beckhoff Ek1100
ES3004
bc515
hengstler 890
IL2301bxxx
Fisher ROC 107 modbus
CU2508
KL2541
HEIDENHAIN EnDat 2.1
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CTS RESISTOR ARAY
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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005F16"
M37641F8"
CTS RESISTOR ARAY
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NC-2H
Abstract: K7B161825A K7B163225A K7B163625A
Text: K7B163625A K7B163225A K7B161825A Preliminary 512Kx36/32 & 1Mx18 Synchronous SRAM Document Title 512Kx36/x32 & 1Mx18-Bit Synchronous Burst SRAM Revision History Rev. No. 0.0 0.1 0.2 History 1. Initial draft 1. Add JTAG Scan Order 1. Add x32 org and industrial temperature .
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K7B163625A
K7B163225A
K7B161825A
512Kx36/32
1Mx18
512Kx36/x32
1Mx18-Bit
165FBGA
NC-2H
K7B161825A
K7B163225A
K7B163625A
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Untitled
Abstract: No abstract text available
Text: Technical Data Silicon Monolithic Bipolar Digital Integrated Circuit TD62783AP/AF TD62784AP/AF 8-channel High-Voltage Source Driver The TD62783AP/AF Series drivers are composed of eight source current Transistor Arays. These drivers are specifically designed for fluoBScent
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TD62783AP/AF
TD62784AP/AF
TD62783AP/AF
-500mA
DIP-18pin
OP-18pin
OP18-P-375:
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HIRD BROWN
Abstract: lecroy lc684
Text: designfeature B y V Laksh m in arayan an . Centre fo r Developm ent n f Telematics VCE BREAKDOWN IS THE MAJOR CAUSE OF SEMICONDUCTOR-DEVICE FAILURE IN INDUCTIVE-LOAD CIRCUITS, BUT YOU CAN TAKE NUMEROUS STEPS TO PROTECT DEVICES FROM EXCESSIVE STRESS. Techniques minimize
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LC684
HIRD BROWN
lecroy lc684
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Untitled
Abstract: No abstract text available
Text: K /D iod es ITZ5.6H ITZ5.6H Silicon Epitaxal Planar Zener Diode Aray • • y>TV \r a H /D im e n s io n s Unit : mm 1) (S IP 9 p in )0 2) K = li> ^ 'f 3) Zf-Z'&Zo $)'S O • Features +l 1) L e a de d typ e (SIP 9pin). 2) 8 e le m e n ts w ith type. ca th od e
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EI 33
Abstract: Raytheon Company High Flow With Cooling Ring UP 8500 W ML-7479A 3,3 kw MHz relay industrial tube company ei-33 d
Text: The Machiett Laboratories, Inc. 1063 Hope Street • Stamford, Conn. 06907 IS S U E D 4-68 Tel. 203-348-7511 • TW X 710-474-1744 m M <&CHLÈT£> G e n e ra l Purpose Triode 55 kW CW D E S C R IP T IO N The M L-7479A is a general-purpose vapor-cooled triode
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ML-7479A
P-512126,
ST-2261
EI 33
Raytheon Company
High Flow With Cooling Ring UP 8500 W
3,3 kw MHz relay
industrial tube company
ei-33 d
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diodo MSC
Abstract: Diodo in 5004 DIODO 4001 pj 325c diodo rp 104 38510/325 cd 4061 P4 DIODO 54LS373 k diodo 541
Text: KIL-M-38510/325C 24 Septem ber 1987 w n re n m rc NIL-M-38510/325B 15 A p r il 1985 MILITARY SPECIFICATIO N M ICROCIRCUITS, D IG IT A L , 8 1POLAR, LON-POHER SCHOTTKY TTL, F L IP - F L O P S , CASCADABLE. MONOLITHIC SILICO N T h is s p e c i f i c a t i o n 1s approved f o r us* by a l l D e p art
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KIL-M-38510/325C
NIL-M-38510/325B
MIL-M-38510.
diodo MSC
Diodo in 5004
DIODO 4001
pj 325c
diodo rp 104
38510/325
cd 4061
P4 DIODO
54LS373
k diodo 541
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Untitled
Abstract: No abstract text available
Text: November 1990 Edition 2.0 DATA SHEET FUJITSU MB81CWOOA-70L/-80L/-10L CMOS 1,048,576 BIT FAST PAGE MODE DYNAMIC RAM CMOS 1M x 1 Bit Fast Page Mode DRAM The Fujitsu MB81C1000A is a CMOS, fully decoded dynamic RAM organized as 1,048,576 words x 1 bit. The MB81C1000A has been designed or mainframe
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MB81CWOOA-70L/-80L/-10L
MB81C1000A
26-lead
MB81C1000A-70L
MB81C1000A-80L
MB81C1000A-10L
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Untitled
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS 47E D Marchi 990 Edition 2.2 DATA SHEET 3 7 4 ^ 2 OOnSll 1 • FUJITSU MB81C4256-70/-80/-10/-12 CMOS 1,048,576 BIT FAST PAGE MODE DYNAMIC RAM CMOS 256 x 4 Bits Fast Page Mode DRAM The Fujitsu MB81C4256 is a CMOS, fully decoded dynamic RAM organized as
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MB81C4256-70/-80/-10/-12
MB81C4256
144words
B81C4256
26-LEAD
LCC-26P-M04)
C26064S-1C
MB81C4256-70
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Untitled
Abstract: No abstract text available
Text: FUJITSU November 1990 Edition 2.0 DATA SHEET M B 8 1 C 1 0 0 1 A - 70U-80U ‘ 10L CMOS 1,048,576 BIT NIBBLE MODE DYNAMIC RAM CM OS 1M x 1 B it Nibble Mode DRAM The Fujitsu M B81C1001A is a CM O S, fully decoded dynam ic RAM organized as 1,048,576 words x 1 bit. The M B81C1001A has been designed for mainframe
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70U-80U
B81C1001A
DIP-18P-M04
MBS1C100C1001A-10L
24-LEAD
FPT-24P-M04)
F24020S-2C
MB81C1001A-70L
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mb81c4256A-60
Abstract: No abstract text available
Text: November 1990 Edition 3.0 DATA SHEET • FUJITSU M B 8 1C4256A-60/-70/-80/-10 CMOS 1,048,576 BIT FAST PAGE MODE DYNAMIC RAM CMOS 256 x 4 Bits Fast Page Mode DRAM The Fujitsu MB81C4256A is a CMOS, fully decoded dynamic RAM organized as 262,144 words x 4 bits. The MB81C4256A has been designed for mainframe
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1C4256A-60/-70/-80/-10
MB81C4256A
develo256A-10
24-LEAD
FPT-24P-M04)
F24020S
B81C4256A-60
MB81C4256A-70
mb81c4256A-60
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Untitled
Abstract: No abstract text available
Text: February 1990 Edition 3.0 FUJITSU DATA SHEET : MB81C1001-70/-80/-10/-12 CMOS 1,048,576 BIT NIBBLE MODE DYNAMIC RAM CMOS 1M x 1 Bit Nibble Mode DRAM The Fujitsu MB81C1001 is a CMOS, fully decoded dynamic RAM organized as 1,048,576 words x 1 bit. The MB81C1001 has been designed for mainframe
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MB81C1001-70/-80/-10/-12
MB81C1001
LCC-26P-M04)
C260MS-1C
MB81C1001-70
MB81C1001-80
MB81C1001-10
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