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    AS127* SWITCH Search Results

    AS127* SWITCH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    DG301AAA Rochester Electronics LLC DG301AAA - CMOS Analog Switch Visit Rochester Electronics LLC Buy
    LM1578AH/883 Rochester Electronics LLC LM1578 - Switching Regulator, Current-mode, 0.75A, 100kHz Switching Freq-Max, MBCY8 - Dual marked (5962-8958602GA) Visit Rochester Electronics LLC Buy

    AS127* SWITCH Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    as127* switch

    Abstract: No abstract text available
    Text: GaAs IC Transfer Switch DC–2 GHz AS127-59 Features MSOP-8 • High Linearity +45 dBm IP3 @ 0.9 GHz 0.0256 (0.65 mm) TYP. ■ Small MSOP-8 Plastic Package PIN 1 INDICATOR ■ Low Insertion Loss (0.4 dB @ 0.9 GHz) 0.118 (3.00 mm) ± 0.004 (0.1 mm) SQ. 0.193 (4.90 mm)


    Original     		AS127-59 AS127-59 43solation 3/99A as127* switch PDF

    AS127-59

    Abstract: No abstract text available
    Text: GaAs IC Transfer Switch DC–2 GHz AS127-59 Features MSOP-8 • High Linearity +45 dBm IP3 @ 0.9 GHz 0.0256 (0.65 mm) TYP. ■ Small MSOP-8 Plastic Package PIN 1 INDICATOR ■ Low Insertion Loss (0.4 dB @ 0.9 GHz) 0.118 (3.00 mm) ± 0.004 (0.1 mm) SQ. 0.193 (4.90 mm)


    Original     		AS127-59 AS127-59 3/99A PDF

    AS127

    Abstract: No abstract text available
    Text: ESAlpha GaAs IC Transfer Switch DC-2 GHz AS127-59 Features MSOP-8 • High Linearity +45 dBm 1P3 @ 0.9 GHz ■0.0256 (0.65 mm)TYR ■ Small MSOP-8 Plastic Package PIN 1 INDICATOR ■ Low Insertion Loss (0.4 dB @ 0.9 GHz) EM j 0.118(3.00 mm) ± 0.004 (0.1 mm)


    OCR Scan     		AS127-59 AS127-59 AS127 PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 PDF