Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    AS64K Search Results

    AS64K Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    A1t smd

    Abstract: 3CAQ smd code A1t
    Text: CYM1622 CYPRESS SEMICONDUCTOR 64K x 16 Static RAM Module F eatures F unctional D escription • High-density 1-megabit SRAM module T he CYM 1622 is a very high p erform ance 1-m egabit static R A M m odule organized as64K w ordsby 16 bits. T he m odule is con­


    OCR Scan
    CYM1622 1622H 1622PV --25C --30C --35C A1t smd 3CAQ smd code A1t PDF

    Untitled

    Abstract: No abstract text available
    Text: 32Kx 32 EEPROM Module mosaic PUMA67E1001/A-90/12 Issue4.0: February 1996 semiconductor, inc. Description ThePUMA67E1001/AisalMbitCMOS EEPROM module in a JEDEC 68 pin J leaded Ceramic Surface Mount Substrate. Accesstimes of90and 120 ns are available.Theoutputwidth is


    OCR Scan
    PUMA67E1001/A-90/12 ThePUMA67E1001/AisalMbitCMOS of90and MIL-STD-883orD0 MIL-STD-883 32Kx32 as64Kx 16and 128Kx8 PUMA67 PDF

    32KX8

    Abstract: HD03 ZL53
    Text: CYM1620 CYPRESS SEMICONDUCTOR 64K x 16 Static RAM Module Features Functional Description • High-density 1-megabit SRAM module • High-speed CM OS SRAMs — Access tim e o f 20 ns The CYM1620 is a veiy high performance 1-megabit static RAM module organized


    OCR Scan
    CYM1620 40-pin, 16bits. Outg-15 Ins-15 CYM1620PD-20C CYM1620PDâ CYM1620HDâ CYM1620PD-30C 32KX8 HD03 ZL53 PDF

    Untitled

    Abstract: No abstract text available
    Text: MXIC 51 2K -B ITI64K x 8 ] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM FEATURES • • • • • • • M X26C 512A 64K x 8 organization +5V operating power supply +12.75V program/erase voltage Electric erase instead of UV light erase Fast access time: 70/90/100/120/150 ns


    OCR Scan
    ITI64K 100juA MX26C512A 512K-bit, as64K PM0455 X26C512A PDF