Untitled
Abstract: No abstract text available
Text: ASB 35 x 35 x 10 MM SERIES • DIMENSIONS DRAWING 35.0±0.5 29.0±0.3 1.142±0.012 35.0±0.5 (1.378±0.020) (1.378±0.020) 29.0±0.3 10.0±0.5 (1.142±0.012) (0.394±0.020) LABEL 10.0 (0.394) 4-Ø3.2±0.3 150.0±10.0 UNIT: (5.906±0.394) ■ MOUNTING 2.5
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ASB03505/12XA-A
ASB03505MA
ASB03512MA
ASB03505HA
ASB03512HA
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Untitled
Abstract: No abstract text available
Text: ASB 40 x 40 x 10 MM SERIES • DIMENSIONS DRAWING 40.0±0.5 1.575±0.020 10.0±0.5 (0.394±0.020) 32.0±0.3 (1.260±0.012) 40.0±0.5 (1.575±0.020) 32.0±0.3 (1.260±0.012) LABEL 10.0 (0.394) 4-Ø3.2±0.3 (4-Ø0.126±0.012) & Q CURVE (AT RATED VOLTAGE) ■ MOUNTING
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ASB0405HHA
ASB0412HHA
ASB0405VHA
ASB0412VHA
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ASB03512HA
Abstract: ASB03512MA
Text: US ASB 35 x 35 x 10 MM SERIES • DIMENSIONS DRAWING 35.0±0.5 29.0±0.3 1.142±0.012 35.0±0.5 (1.378±0.020) (1.378±0.020) 29.0±0.3 10.0±0.5 (1.142±0.012) (0.394±0.020) LABEL 10.0 (0.394) 4-Ø3.2±0.3 150.0±10.0 UNIT: (5.906±0.394) ■ MOUNTING PANEL CUTOUT
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ASB03505/12XA-A
ASB03505MA
ASB03512MA
ASB03505HA
ASB03512HA
ASB03512HA
ASB03512MA
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ASB0412MA
Abstract: ASB0405MA ASB0412HHA ASB0412VHA ASB0412HA ASB0412 ASB0405HA ASB0405
Text: US ASB 40 x 40 x 10 MM SERIES • DIMENSIONS DRAWING 40.0±0.5 1.575±0.020 10.0±0.5 (0.394±0.020) 32.0±0.3 (1.260±0.012) 40.0±0.5 (1.575±0.020) 32.0±0.3 (1.260±0.012) LABEL 10.0 (0.394) 4-Ø3.2±0.3 (4-Ø0.126±0.012) & Q CURVE (AT RATED VOLTAGE)
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ASB0405HHA
ASB0412HHA
ASB0405VHA
ASB0412VHA
ASB0412MA
ASB0405MA
ASB0412HHA
ASB0412VHA
ASB0412HA
ASB0412
ASB0405HA
ASB0405
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ASB02505HHA
Abstract: ASB02505VHA ASB02512MA ASB02505 ASB02505LA ASB02505MA
Text: US ASB 25 x 25 x 10 MM SERIES • DIMENSIONS DRAWING 25.0±0.5 10.0±0.5 0.394±0.020 LABEL 10.0 4-Ø2.8±0.3 (0.394) (4-Ø0.110±0.012) 150.0±10.0 UNIT: (5.906±0.394) & Q CURVE (AT RATED VOLTAGE) MODEL ASB02505/12XA 9.0 0.12 3.0 0.06 1.5 4-Ø2.8 (4-Ø0.110)
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ASB02505/12XA
ASB02505HA
ASB02512HA
ASB02505HHA
ASB02505VHA
ASB02505HHA
ASB02505VHA
ASB02512MA
ASB02505
ASB02505LA
ASB02505MA
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Untitled
Abstract: No abstract text available
Text: ASW114 5 ~ 8000 MHz MMIC Amplifier Features Description 17 dB Gain at 2000 MHz 14.5 dBm P1dB at 2000 MHz 29 dBm OIP3 at 2000 MHz 3.3 dB NF at 2000 MHz MTTF > 100 Years Single Supply The ASW114, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide
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ASW114
ASW114,
OT363
OT363
40x40
LQH31CN1R0M03)
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ASW204
Abstract: No abstract text available
Text: ASW204 5 ~ 8000 MHz MMIC Amplifier Features Description 18 dB Gain at 2000 MHz 21 dBm P1dB at 2000 MHz 32.5 dBm OIP3 at 2000 MHz 1.75 dB NF at 2000 MHz MTTF > 100 Years Single Supply The ASW204, a power amplifier MMIC, has a high
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ASW204
ASW204,
ASW204
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Untitled
Abstract: No abstract text available
Text: ASW214 5 ~ 8000 MHz MMIC Amplifier Features Description 19.5 dB Gain at 900 MHz 16 dBm P1dB at 900 MHz 30 dBm Output IP3 at 900 MHz 5.5 dB NF at 900 MHz MTTF > 100 Years Single Supply The ASW214, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide
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ASW214
ASW214,
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Untitled
Abstract: No abstract text available
Text: AST54S High Gain, Low Noise Amplifier Features Description 19.0 dB Gain at 900 MHz 0.4 dB NF at 900 MHz 30 dBm OIP3 at 900 MHz 18 dBm P1dB at 900 MHz One-stage LNA AST54S is a one-stage LNA which has a low noise, high gain, and high linearity over a wide range of
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AST54S
AST54S
OT343
OT343
23x13
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Untitled
Abstract: No abstract text available
Text: ASW212 5 ~ 8000 MHz MMIC Amplifier Features Description 14 dB Gain at 900 MHz 18 dBm P1dB at 900 MHz 35 dBm Output IP3 at 900 MHz 5.0 dB NF at 900 MHz MTTF > 100 Years Single Supply The ASW212, a power amplifier MMIC, has a high
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ASW212
ASW212,
100pF
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Untitled
Abstract: No abstract text available
Text: ASW234 5 ~ 8000 MHz MMIC Amplifier Features Description 16.8 dB Gain at 2 GHz 22 dBm P1dB at 2 GHz 31 dBm Output IP3 at 2 GHz 1.8 dB NF at 2 GHz MTTF > 100 Years Single Supply The ASW234, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide
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ASW234
ASW234,
OT363
OT363
40x40
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Untitled
Abstract: No abstract text available
Text: ALN1730WB Internally Matched LNA Module Description Features •Application in 1300~3500 MHz ·0.55 dB NF at 1950 MHz ·Single Supply Typical Performance Parameters Frequency The ALN1730WB is the compactly designed surfacemount internally matched LNA module for the use in the
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ALN1730WB
ALN1730WB
1700MHz
3500MHz
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DVD read writer circuit diagram
Abstract: No abstract text available
Text: 32-BIT SINGLE CHIP MICROCONTROLLER LC67F5104A Preliminary Overview The LC67F5104A is a CMOS 32-bit RISC microcontroller which is ideally suited for CD-R/RW or DVD applications. This microcontroller contains the ARM7TDMITM core produced by ARM, and various peripherals
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32-BIT
LC67F5104A
LC67F5104A
128K-bit
100-pin
TQFP-100
32-bit)
16K-byte)
DVD read writer circuit diagram
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Untitled
Abstract: No abstract text available
Text: The former Microelectronics Group of Lucent Technologies Agere Systems’ T8300 Phone-On-A-Chip IP solution is a highly integrated device that provides complete silicon for an IP telephone set residing on a local area network LAN .This device integrates the requisite
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T8300
OT01-206IPT
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Untitled
Abstract: No abstract text available
Text: plerowTM ALN1701 Internally Matched LNA Module Features Description • S21 = 30.5 dB @ 1550 MHz = 29.5 dB @ 1850 MHz · NF of 0.95 dB over frequency · Unconditionally Stable · Single 5V Supply · High OIP3 at Low Current C o u pl er C o u pl er The plerowTM ALN-series is the compactly designed surface-mount
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ALN1701
13x13mm)
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Untitled
Abstract: No abstract text available
Text: plerowTM ALN0859BT Internally Matched LNA Module Features Description • S21 = 19.4 dB @ 824 MHz = 18.6 dB @ 894 MHz · NF of 0.8 dB over Frequency · Unconditionally Stable · Single 5V Supply · High OIP3 @ Low Current C o u pl er C o u pl er The plerowTM ALN-series is the compactly designed surface-mount
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ALN0859BT
10x10mm)
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simcard
Abstract: trident block diagram of ppi ssi converter to serial DSP16000 sim 900 RTC ARM250 trident micro "DSP GROUP" wireless
Text: Product Brief February 2001 Trident Features • ■ ■ ■ Memory complement: — DSP: 16K x 16 RAM, 96K x 16 maskprogrammable ROM. — ARM *: 4K x 32 mask-programmable ROM, 2K x 32 RAM byte writable . — Processor interface memory: 512 x 16 shared RAM.
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PB01-044WTEC
simcard
trident
block diagram of ppi
ssi converter to serial
DSP16000
sim 900 RTC
ARM250
trident micro
"DSP GROUP" wireless
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Untitled
Abstract: No abstract text available
Text: plerowTM ALN1967T2 Internally Matched LNA Module Features Description • S21 = 19.6 dB@1960 MHz = 19.4 dB@1975 MHz · NF of 0.65 dB over Frequency · Unconditionally Stable · Single 5 V Supply · High OIP3@Low Current C o u pl er C o u pl er The plerowTM ALE-series is the compactly designed surface-mount
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ALN1967T2
25x25
10x10
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Untitled
Abstract: No abstract text available
Text: plerowTM ALN1735T2 Internally Matched LNA Module Features Description • S21 = 20.2dB@1720 MHz = 19.8dB@1750 MHz · NF of 0.65 dB over Frequency · Unconditionally Stable · Single 5 V Supply · High OIP3@Low Current C o u pl er C o u pl er The plerowTM ALN-series is the compactly designed surface-mount
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ALN1735T2
25x25
10x10
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simcard
Abstract: ARM Advanced RISC Machine DSP16000
Text: Product Brief February 2001 Trident III Features • ■ ■ ■ Memory complement: — DSP: 16K x 16 RAM, 96K x 16 maskprogrammable ROM. — ARM *: 4K x 32 mask-programmable ROM, 2K x 32 RAM byte writable . — Processor interface memory: 512 x 16 shared
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PB01-066WMA
simcard
ARM Advanced RISC Machine
DSP16000
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simcard
Abstract: trident micro 555 timer ARM processor data sheet DSP16000 processor arm 9 block diagram of ppi ARM250
Text: Product Brief February 2001 Trident II Features • ■ ■ ■ Memory complement: — DSP: 20K x 16 RAM, 144K x 16 maskprogrammable ROM. — ARM *: 4K x 32 mask-programmable ROM, 2K x 32 RAM byte writable . — Processor interface memory: 512 x 16 shared
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PB01-065WMA
simcard
trident micro
555 timer
ARM processor data sheet
DSP16000
processor arm 9
block diagram of ppi
ARM250
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ASB7000
Abstract: ASB 7000 ASB7003 ASB8000 1838 pin configuration A-SB
Text: BEAM LEAD PIN DIODES ASI’s ASB 7000 SERIES are Planar Beam Lead PIN Diodes for use as series diodes up to 18 GHz in broadband multi-throw switches, phase shifters, limiters, attenuators and modulators for microstrip and stripline applications. Features include low capacitance, low series
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DIMENS50NS
10fiA-
ASB7000
ASB 7000
ASB7003
ASB8000
1838 pin configuration
A-SB
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ASB7000
Abstract: No abstract text available
Text: 0258354 A D V A N C E D S E M I C O N D U C T O R 92D 00110 Ta 7W 7- DE I 02Sfi3S4 0DD0110 BEAM LEAD PIN DIODES ASI’s ASB 7000 SERIES are Planar Beam Lead PIN Diodes for use as series diodes up to 18 GHz in broadband multi-throw switches, phase shifters, limiters, attenuators and modulators for microstrip and
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02Sfi3S4
0DD0110
ASB8000
ASB9000
ASB7000
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q406 transistor
Abstract: nf 820 transistor q406 q406 transistor data
Text: SN 7000 I nf ineon technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type ybs SN 7000 60 V Type SN 7000 SN 7000 Ordering Code Q62702-S638 Q62702-S637 0.25 A ^DS(on) Package Marking 5Q
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Q62702-S638
Q62702-S637
E6288
E6296
S35bG5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
q406 transistor
nf 820
transistor q406
q406 transistor data
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