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    ASI10535 Search Results

    ASI10535 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ASI10535 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF

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    ASI2304

    Abstract: ASI10535
    Text: ASI2304 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 2304 is Designed for General Purpose Class C Power Amplifier Applications up tp 3000 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 9.5 dB min. at 4 W / 2300 MHz


    Original     		PDF ASI2304 ASI2304 ASI10535

    ASI10535

    Abstract: ASI2304
    Text: ASI2304 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 2304 is Designed for General Purpose Class C Power Amplifier Applications up tp 3000 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 9.5 dB min. at 4 W / 2300 MHz


    Original     		PDF ASI2304 ASI10535 ASI10535 ASI2304

    ASI10535

    Abstract: ASI2304
    Text: ASI2304 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 2304 is a common base transistor capable of providing 4.0 W Calss-C Rf output @ 2.3 GHZ. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 8.0 dB min. at 4 W / 2300 MHz


    Original     		PDF ASI2304 ASI10535 ASI2304