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    ASI10536 Search Results

    ASI10536 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ASI10536 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF

    ASI10536 Datasheets Context Search

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    ASI2307

    Abstract: ASI10536 9533a k 2057
    Text: ASI2307 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 2307 is Designed for General Purpose Class C Power Amplifier Applications up to 3000 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 9.5 dB min. at 7.0 W/2300 MHz


    Original     		PDF ASI2307 ASI2307 ASI10536 9533a k 2057

    ASI10536

    Abstract: ASI2307
    Text: ASI2307 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 2307 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 8.0 dB min. at 7.0 W/2300 MHz


    Original     		PDF ASI2307 ASI10536 ASI2307

    ASI10536

    Abstract: ASI2307
    Text: ASI2307 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 2307 is Designed for General Purpose Class C Power Amplifier Applications up to 3000 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 9.5 dB min. at 7 W / 2300 MHz


    Original     		PDF ASI2307 ASI10536 ASI10536 ASI2307