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    ASI10539 Search Results

    ASI10539 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ASI10539 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF

    ASI10539 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ASI3003

    Abstract: in 3003 TRANSISTOR ASI10539 transistor m 3003 g
    Text: ASI3003 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 3003 is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 5 dB min. at 3 W / 3,000 MHz


    Original     		PDF ASI3003 CHARACTERISTIC65 ASI3003 in 3003 TRANSISTOR ASI10539 transistor m 3003 g

    ASI10539

    Abstract: ASI3003 147 B transistor
    Text: ASI3003 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 3003 is a common base transistor capable of providing 3.0 W Class-C RF output power @ 3.0 GHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 6.0 dB min. at 3 W / 3,000 MHz


    Original     		PDF ASI3003 ASI10539 ASI3003 147 B transistor

    in 3003 TRANSISTOR

    Abstract: ASI10539 ASI3003
    Text: ASI3003 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 3003 is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 5 dB min. at 3 W / 3,000 MHz


    Original     		PDF ASI3003 ASI10539 in 3003 TRANSISTOR ASI10539 ASI3003