Untitled
Abstract: No abstract text available
Text: HF100-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF100-28 is a class A silicon NPN planar transistor, designed for SSB communications. Diffused ballasting provide High VSRW Capability under rated operating conditions. PACKAGE STYLE .500 4L FLG
|
Original
|
PDF
|
HF100-28
HF100-28
112x45°
ASI10608
|
100WPEP
Abstract: ASI10608 HF100-28 E270
Text: HF100-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF100-28 is a class AB common Emitter Transistor Designed for broadband amplifier operations up to 30 MHz. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° A • PG = 15 dB min. at 100 W/30 MHz • High linear power output
|
Original
|
PDF
|
HF100-28
HF100-28
112x45°
ASI10608
100WPEP
ASI10608
E270
|
HF100-28
Abstract: ASI10608
Text: HF100-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF100-28 is a class A silicon NPN planar transistor, designed for SSB communications. Diffused ballasting provide High VSRW Capability under rated operating conditions. PACKAGE STYLE .500 4L FLG
|
Original
|
PDF
|
HF100-28
HF100-28
112x45°
ASI10608
|
ASI10608
Abstract: HF125-28
Text: HF125-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF125-28 is Designed for PACKAGE STYLE .500 4L FLG FEATURES: .112x45° A • PG = 15 dB min. at 100 W/30 MHz • IMD3 = -30 dBc max. at 100 W PEP • Omnigold Metalization System FULL R E L
|
Original
|
PDF
|
HF125-28
HF125-28
112x45°
ASI10608
ASI10608
|
Untitled
Abstract: No abstract text available
Text: HF100-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF100-28 is a class A silicon NPN planar transistor, designed for SSB communications. Diffused ballasting provide High VSRW Capability under rated operating conditions. PACKAGE STYLE .500 4L FLG
|
Original
|
PDF
|
HF100-28
HF100-28
112x45Â
|