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    ASI10655 Search Results

    ASI10655 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ASI10655 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF

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    TVV007

    Abstract: ASI10655
    Text: TVV007 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV007 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C 2x ØN FU LL R D FEATURES: • Common Emitter • 5:1 VWR capability • PG = 10 dB at 7.5 W/225 MHz


    Original     		PDF TVV007 TVV007 ASI10655 ASI10655

    ASI10655

    Abstract: TVV007
    Text: TVV007 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .500 6L FLG DESCRIPTION: A C The ASI TVV007 is Designed for 2x ØN FULL R D FEATURES: • • • Omnigold Metalization System B G 60 V VCE 35 V PDISS 140 W @ TC = 25 OC -65 C to +200 C TJ inches / mm


    Original     		PDF TVV007 TVV007 ASI10655 ASI10655

    Untitled

    Abstract: No abstract text available
    Text: TVV007 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV007 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C 2x ØN FU LL R D FEATURES: • Common Emitter • PG = 10 dB at 7.5 W/225 MHz • Omnigold Metalization System


    Original     		PDF TVV007 TVV007 ASI10655